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Observation of fine domain configuration by detecting micro-Hall effect under scanning probe microscopy

在扫描探针显微镜下检测微霍尔效应观察精细域结构

基本信息

批准号：
15360160
负责人：
NAKAGAWA Shigeki
金额：
$ 10.05万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15360160/
关键词：
Ferromagnetic Hall effect Anomalous Hall effect Perpendicular Magnetic Recording Media Scanning Probe Microscopy Magnetization state Magnetization Process Double layered media 異方性分散

项目摘要

The effects of magnetic interaction between the recording layer and soft magnetic underlayer were evaluated for an FePt/FeCoB (or NiFe) double-layered thin films. Presence or absence of a non-magnetic intermediate layer between the recording layer and the soft magnetic underlayer revealed significantly different results in the Hall voltage measurement indicating the interlayer magnetic interactions. Especially in the FePt/FeCoB system the effects were remarkable. Existence of a very thin layer of FeCoB thin film adjacent to the FePt layer was found to have significant effect in the magnetization process of the FePt layer due to the strong exchange interaction between them. On the other hand, soft magnetic properties of the FeCoB or the NiFe layer was found to deteriorate due to the disturbance in the in-plane magnetization orientation by the fringing flux from the FePt layer. Deterioration of the soft magnetic properties was found to be in the largest extent when the FePt layer was in AC erased state. The reason can be attributed to the increased fluctuation in the fringing field to the soft magnetic layer. Moreover, compared to the FeCoB,NiFe thin films coexisting with an FePt layer were found more vulnerable to the fringing field. Since the Hall effect is a phenomenon intrinsic to the material in concern, it is not always possible to detect satisfactory results. For some cases factors such as the specimen composition and the physical structure seem to dominate the exertion of the Hall voltage. However, for most of the materials studied so far for the application of high-density magnetic recording media or memory devices, application of spin dependent Hall effects is thought to be suitable not only for evaluation but for the fabrication of new devices also. Based on the results found in this study further intelligent applications of the Hall effects are highly expected.

研究了FePt/FeCoB（或NiFe）双层薄膜中记录层与软磁衬层之间的磁相互作用对薄膜性能的影响。记录层和软磁底层之间的非磁性中间层的存在或不存在揭示了在霍尔电压测量中显著不同的结果，表明层间磁相互作用。特别是在FePt/FeCoB体系中，其效果更为显著。发现FeCoB薄膜与FePt层之间存在很薄的交换作用，对FePt层的磁化过程有重要影响。另一方面，发现FeCoB或NiFe层的软磁性由于来自FePt层的边缘磁通对面内磁化取向的干扰而劣化。当FePt层处于交流擦除状态时，软磁性能的劣化程度最大。其原因可以归因于软磁层的边缘场的波动增加。此外，与FeCoB相比，NiFe薄膜与FePt层共存被发现更容易受到边缘场的影响。由于霍尔效应是相关材料固有的现象，因此并不总是能够检测到令人满意的结果。在某些情况下，如试样成分和物理结构的因素似乎占主导地位的霍尔电压的施加。然而，对于迄今为止研究的用于高密度磁记录介质或存储器器件的大多数材料，自旋相关霍尔效应的应用被认为不仅适合于评估，而且还适合于制造新器件。基于这项研究中发现的结果，霍尔效应的进一步智能应用是非常值得期待的。