Improvement of anomalous Hall effect of ferromagnetic thin films with perpendicular magnetization and its application to integrated non-volatile memory

垂直磁化铁磁薄膜反常霍尔效应的改善及其在集成非易失性存储器中的应用

• 批准号: 12450143
• 负责人: NAKAGAWA Shigeki
• 金额: $ 8.19万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450143/
• 关键词: ferromagnetic Hall effect; perpendicular magnetic anisotropy; Observation of magnetization reversal process; Spin tunneling effect; Magnetic interaction; 強磁性Hall効果

In this research, a ferromagnetic Hall effect of very thin film with perpendicular magnetic anisotropy were observed aiming for their application to non-volatic memory cells. An anomalous Hall effect (AHE) and a planar Hall effect (PHE) represent a perpendicular component and an in-plane component of the magnetization in the double-layered media. Since AHE and PHE have different symmetries regarding to the applied magnetic field H, it is easy to distinguish the AHE component, which is proportional to M, and PHE component, which is proportional to M^2, from the measured Hall voltage V_H. The Hall voltage of the double-layered film composed of Co-Cr-Ta and Ni-Fe layers was observed when the magnetic field is applied at a certain angle from the normal to the film plane. The observed V_H-H characteristics are regarded as a sum of Hall voltage outputs of PHE and AHE. The perpendicular and the in-plane components, which are regarded as the magnetization process of Co-Cr-Ta and that of Ni-Fe layer, respectively, can be easily determined from these characteristics. The Hall measurement is useful to study the magnetization characteristics in the double-layered media in perpendicular magnetic recording system. Furthermore, A new method for evaluating magnetic interaction among the particles in perpendicular magnetic recording layers under canted magnetic field have been proposed using Anomalous Hall measurement and VSM measurement. These results were very convenient to design Hall memory cells proposed in this project.

在本研究中，观察到具有垂直磁各向异性的非常薄的薄膜的铁磁霍尔效应，旨在将其应用于非volatic存储单元。反常霍尔效应（AHE）和平面霍尔效应（PHE）代表双层介质中磁化的垂直分量和面内分量。由于AHE和PHE关于所施加的磁场H具有不同的对称性，因此很容易从测量的霍尔电压V_H中区分与M成比例的AHE分量和与M^2成比例的PHE分量。当外加磁场与膜面法线成一定角度时，观察到Co-Cr-Ta和Ni-Fe双层膜的霍尔电压。所观察到的V_H-H特性被视为PHE和AHE的霍尔电压输出之和。从这些特征可以很容易地确定垂直分量和面内分量，它们分别被认为是Co-Cr-Ta和Ni-Fe层的磁化过程。霍尔测量对于研究垂直磁记录系统中双层介质的磁化特性是有用的。此外，本文还提出了一种利用反常霍尔测量和VSM测量来评价倾斜磁场下垂直磁记录层中粒子间磁相互作用的新方法。这些结果对于本项目中提出的霍尔存储单元的设计是非常方便的。

项目成果

船橋伸彦, 馮 潔, 松下伸広・A, 中川茂樹, 直江正彦: "Pt下地層改良によるBaMフェライト薄膜の微粒子化"日本応用磁気学会誌. 巻(25)号(4-2). 547-540 (2001)

Nobuhiko Funabashi、Jie Feng、Nobuhiro Matsushita A、Shigeki Nakakawa、Masahiko Naoe：“通过改善 Pt 底层实现 BaM 铁氧体薄膜的细晶化”日本应用磁学学会杂志 (25) 第 1 期。 2). 547-540 (2001)。

斉藤弘幸, 清水優, 中川茂樹: "Si下地層上のCo/Cu多層膜の結晶性とGMR特性"日本応用磁気学会誌. 巻(25)号(4-2). 803-806 (2001)

Hiroyuki Saito、Masaru Shimizu、Shigeki Nakakawa：“Si 底层上 Co/Cu 多层膜的结晶度和 GMR 特性”，日本应用磁学学会杂志 (25) 第 803-806 期。 2001）

船橋伸彦, 馮 潔, 松下伸広, 中川茂樹, 直江正彦: "Pt下地層改良によるBaMフェライト薄膜の微粒子化"日本応用磁気学会誌. 25・4-2. 547-540 (2001)

Nobuhiko Funabashi、Jie Feng、Nobuhiro Matsushita、Shigeki Nakakawa 和 Masahiko Naoe：“通过改进 Pt 底层实现 BaM 铁氧体薄膜的细晶化”日本应用磁学学会杂志 25・4-540（2001 年）。

佐藤厚,中川茂樹,直江正彦: "Addition of SiO_2_to increase Coercivity and Squareness Ratio of BaFerrite Films for Perpendicular Magnetic Recording Media"IEICE Transactions on Electronics. 巻(E83C)号(9). 1492-1466 (2000)

Atsushi Sato、Shigeki Nakakawa、Masahiko Naoe：“添加 SiO_2_ 以提高垂直磁记录介质的 BaFerrite 薄膜的矫顽力和矩形比”IEICE Transactions on Electronics (E83C) 卷 1492-1466 (2000)。

佐藤 厚, 中川茂樹, 直江正彦: "Co-Cr-Ta/Pt/Ti垂直記録膜の作製とPt中間層による微細粒子化"日本応用磁気学会誌. 巻(25)号(4-2). 543-546 (2001)

Atsushi Sato、Shigeki Nakakawa、Masahiko Naoe：“Co-Cr-Ta/Pt/Ti 垂直记录薄膜的制备和使用 Pt 中间层的细粒形成”日本应用磁学学会杂志（25）第 1 期。 4-2）。543-546（2001）。