Development of Magnetic thin film devices with large saturation magnetization and high anisotropy field with resonance frequency above 10 GHz

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FeCoB films prepared on Ru underlayer using oblique incidence of sputtered particles have high in-plane magnetic anisotropy H_k of 500 Oe. There is an anisotropic residual stress which is an origin of the in-plane magnetic anisotropy. Such anistotropic crystalline structures may affect to the anisotropic residual stress in FeCoB layer on Ru underlayer. B content of around 6 at.% is appropriate to induce such an anisotropic residual stress. Multilayered structure with Si/NiFe is effective to reduce Bloch type domain walls. The FeCoB films with H_k of 500 Oe revealed 9. 2 GHz of resonance frequency.