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Study of electronic states in quantum ring structures by means of terahertz radiation

利用太赫兹辐射研究量子环结构中的电子态

基本信息

批准号：
15540309
负责人：
FUJII Kenichi
金额：
$ 2.5万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15540309/
关键词：
quantum ring microwave cyclotron resonance spintronics 局在テラヘルツ発振

项目摘要

We fabricated various sire of single quantum ring structures and ring array structures to investigate the electronic states in the quantum ring structures. For the fabrication of the ring structures, e-beam lithography and wet etching techniques was employed to GaAs/AlGaAs heterostructures. In the fabricated single ring structures being as small as possible, Aharonov-Bohm oscillation could be observed in the magnetoresistance measurements at 4.2 K Furthermore, under irradiation of microwaves, we found a new broad peak of resistance at the magnetic field at which the cyclotron radius equals to the geometrically defined radius of the ring. The appearance of the broad peak in several ring structures with different ring size indicates the absorption of the microwaves due to the electrons in the ring structure. The traveling tune of electrons through a ring is much shorter than the period of the applied microwaves. This experimental result suggests that the existence of the localized electrons in the ring at the magnetic field at least for the tune mare than a period of the microwaves. For the increasing of the resistance, the localized electrons have to interact with conducting electrons tough the ring. The observed assistance peak can be explained by the existence of the localized electrons in the quantum ring.This experimental results apply to the crew type of anntena and the development of spin transistors which can work at high frequency like microwaves. For the application of the quantum ring to the anntena, we tried to make snail solid state light emitter with Ge : Te. For the application of the quantum, ring to the spintronics field, we also investigated the electronic states of the another III-V compound heterostructures, InGaAs/InAlAs and InGaSb/InAlSb heterostructures. In this stage, we concluded that InGaAs/InAlAs heterostructures is suitable for making a quantum ring structure for the development of spin transistors

我们制作了各种单量子环结构和环阵列结构来研究量子环结构中的电子态。为了制造环形结构，电子束光刻和湿法蚀刻技术被用于 GaAs/AlGaAs 异质结构。在制造的尽可能小的单环结构中，在 4.2 K 的磁阻测量中可以观察到阿哈罗诺夫-玻姆振荡。此外，在微波照射下，我们在回旋半径等于环的几何定义半径的磁场处发现了一个新的宽电阻峰。不同环尺寸的几种环结构中宽峰的出现表明环结构中的电子对微波的吸收。电子通过环的行进调谐比所施加的微波的周期短得多。该实验结果表明，在磁场下，环中局域电子的存在至少比微波周期长。为了增加电阻，局域电子必须与环上的导电电子相互作用。观察到的辅助峰可以用量子环中局域电子的存在来解释。该实验结果适用于船员型天线和可在微波等高频下工作的自旋晶体管的开发。为了将量子环应用于天线，我们尝试用Ge:Te制作蜗牛固态发光体。为了将量子环在自旋电子学领域中的应用，我们还研究了另一种III-V族化合物异质结构InGaAs/InAlAs和InGaSb/InAlSb异质结构的电子态。在这个阶段，我们得出结论：InGaAs/InAlAs异质结构适合制作量子环结构，用于自旋晶体管的开发