Investigation of impurity effect on re-crystallization process in heavily implanted silicon carbide

杂质对重注入碳化硅再结晶过程影响的研究

• 批准号: 15560012
• 负责人: SATOH Masataka
• 金额: $ 2.24万
• 依托单位: Hosei University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560012/
• 关键词: Silicon carbide; Ion implantation; Electrical activation; P impurity; Al impurity; Crystallization process; 非晶質層; イオン注入欠陥層; 再結晶化速度; 不純物効果; リン不純物; アルミニウム不純物; 4H-SiC(1120)

We investigated that the impurity concentration dependence of the recrystallization rate of the phosphorus implanted 4H-SiC(112-0). Samples used in the present study were p-type 4H-SiC(112-0). The phosphorus ions were multiply implanted to form the implantation layer with the thickness of 200 nm and the phosphorus concentration of 1 x 10^<20>, 4 x 10^<20>, and 1 x 10^<21>/cm^3, respectively. The isothermal annealing of the implanted samples were performed at the temperature range from 660 to 720 ℃ in Ar gas flow using an infrared image annealer with a black SiC crucible. The recrystallization rate of the P ion implantation-induced amorphous layer in 4H-SiC(11-20) increases with an activation energy of 3.4 eV as well as the case of the Ar ion implantation-induced amorphous layer in 6H-SiC(11-20) and (1-100). As the P concentration is increased from 1 x 10^<20> to 1 x 10^<21> /cm^3, the recrystallization rate is enhanced from 3.5 to about 5nm/min, while the recrystallization rate for Ar implantation-induced amorphous layer was 1.5 nm/min. It is suggested that the recrysallizatioin process is enhanced by the presence of the substitutional impurity at the a/c interface during the recrystallization. The similar effect is identified for the case of the implanted of Al to SiC.

研究了磷离子注入4 H-SiC（112-0）的再结晶速率与杂质浓度的关系。本研究中使用的样品是p型4 H-SiC（112-0）。将磷离子多重注入以形成厚度为200 nm且磷浓度分别为1 × 10 - 4<20>、4 × 10 - 4<20>和1 × 10 - 4<21>/cm-3的注入层。用红外热像退火炉和黑色SiC坩埚对注入样品进行了660 ~ 720 ℃的等温退火。4 H-SiC（11-20）中P离子诱导的非晶层的再结晶速率随着激活能的增加而增加，6 H-SiC（11-20）和（1-100）中Ar离子诱导的非晶层的再结晶速率也随着激活能的增加而增加。当P浓度从1 × 10 ~（<20>13）/cm ~ 3增加到1 × 10 <21>~（13）/cm ~ 3时，再结晶速率从3.5 nm/min增加到约5 nm/min，而Ar气诱导非晶层的再结晶速率为1.5 nm/min。对于Al到SiC的注入的情况，确定了类似的效果。

项目成果

Recrystallization process of phosphorus ion implanted 4H-SiC(112-0)

磷离子注入4H-SiC(112-0)的再结晶过程

• DOI: 10.1016/j.nimb.2005.08.093
• 发表时间: 2006
• 期刊: Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
• 影响因子: 1.3
• 作者: M. Satoh;T. Hitomi;T. Suzuki
• 通讯作者: T. Suzuki