权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Investigation of the subustituional behavior and the electrical activation of implanted P and N impurities in SiC

SiC 中注入 P 和 N 杂质的取代行为和电激活研究

基本信息

批准号：
13650019
负责人：
SATOH Masataka
金额：
$ 1.98万
依托单位：
Hsei University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

项目摘要

1. Activation Process of the implated N impurities in 6H-SiCIn the N concentration range below 2×10^<20>/cm^3, the electrical activation is achieved by annealing at 1200℃. The substitution of the N impurities on Si sublattice sites in SiC is also promoted during the annealing at 1200℃. However, in the N concentration range above 2×10^<20>/cm^3, the number of free electrons activated from N impurities is decreased with the increase of the N concentration. In this regime, it is suggested that the excess implanted N impurities preferably occupy the interstitial sites in SiC rather than the substitutional sites.2. Activation process of the implanted P impurities in 6H-SiCThe activation process of the implanted P impurities in 6H-SiC depends on whether the implanted layer is amorphized by implantation process. In the case of the implantation with the amorphization, the implanted P impurities can occupy the Si sublatties sites while the amorphized implant layer is re-crystallized by annealing even at 1000℃, which leads immediately the electrical activation of the implanted P impurities. However, in the annealing at higher temperature induces the out-diffusion and the redistribution of the implanted P impurities in SiC. On the other hand, in the case of the implantation without the amorphization of the implanted layer using "Hot" implantation technique, the concentration of the P impurities on the Si sublattice sites is increase by increasing the annealing temperature, which results in the increase of the free electron concentration in SiC. However, the obtained free electron concentration of the "Hot" implanted SiC is lower than the case of the amorphized implant layer. It is suggested that a part of the implanted P impurities occupy the interstitial sites in SiC.

1. 6h - sic1中掺杂N杂质的活化过程在N浓度≤2×10^<20>/cm^3的范围内，通过1200℃退火实现电活化。1200℃退火也促进了SiC中Si亚晶格上N杂质的取代。然而，在2×10^<20>/cm^3以上的N浓度范围内，随着N浓度的增加，N杂质激活的自由电子数量减少。在这种情况下，过量注入的氮杂质更倾向于占据碳化硅的间隙位，而不是取代位。6H-SiC中注入P杂质的活化过程取决于注入层是否被注入过程非晶化。在非晶注入的情况下，注入的P杂质可以占据Si亚晶格位置，而非晶注入层即使在1000℃下也会通过退火重新结晶，这导致注入的P杂质立即电激活。但在高温退火过程中，注入的P杂质向外扩散并重新分布。另一方面，在未形成非晶化注入层的情况下，随着退火温度的升高，Si亚晶格上P杂质的浓度增加，导致SiC中的自由电子浓度增加。然而，“热”注入SiC的自由电子浓度低于非晶注入层。结果表明，部分注入的磷杂质占据了碳化硅的间隙。