The study of Y_2O_3-based Oxide Phosphor Thin Film Electroluminescent Devices

Y_2O_3基氧化物荧光粉薄膜电致发光器件的研究

• 批准号: 15560037
• 负责人: MINAMI Tadatsugu
• 金额: $ 2.3万
• 依托单位: Kanazawa Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560037/
• 关键词: Y_2O_3:Mn; Thin Film Electroluminescence; Oxide; Phosphor; (Y_2O_3-Ga_2O_3):Mn; (Y_2O_3-GeO_3):Mn; Sol-gel; Y2O3:Mn

This project introduces newly developed multicomponent oxide host materials for electroluminescent phosphors. These are composed of Y_2O_3 and another binary compound such as Al_2_O3, Ga_2O_3, Gd_2O_3, In_2O_3, B_2O_3 or GeO_2. The various Mn-activated (Y_2O_3)_<1-x>-(oxide)x phosphor thin films were deposited while varying the composition by r.f. magnetron sputtering, sol-gel and postannealed. The obtained electroluminescent and photoluminescent emissions from the ((Y_2O_3)_<1-x>-(oxide)x):Mn phosphor thin-film emitting layers were strongly dependent on the preparation and postannealing conditions as well as on the composition. The highest luminance and photoluminescent intensity were obtained by using a (Y_2O_3)_<1-x>-(oxide)x:Mn thin-film emitting layer prepared with an optimized composition. Both the obtained electroluminescent and photoluminescent characteristics were correlated to the crystallinity of the thin-film emitting layers. High luminances above 7000 cd/m^2 were obtained in ((Y_2O_3)_<0.6>-(GeO_2)_<0.4>):Mn and ((Y_2O_3)_<0.5>-(Ga_2O_3)_<0.5>):Mn thin-film electroluminescent devices fabricated under optimal condition and driven by an ac sinusoidal wave voltage at 1 kHz.

该项目介绍了新开发的用于电致发光荧光粉的多组分氧化物主体材料。它们由 Y_2O_3 和另一种二元化合物如 Al_2_O3、Ga_2O_3、Gd_2O_3、In_2O_3、B_2O_3 或 GeO_2 组成。沉积各种Mn激活的(Y_2O_3)_ 1-x -(氧化物) x 磷光体薄膜，同时通过r.f.改变组成。磁控溅射、溶胶-凝胶和后退火。从((Y_2O_3)_1-x-(氧化物)x):Mn磷光体薄膜发射层获得的电致发光和光致发光发射强烈依赖于制备和后退火条件以及组成。采用优化组成制备的(Y_2O_3)_1-x-(氧化物)x:Mn薄膜发光层获得了最高的亮度和光致发光强度。所获得的电致发光和光致发光特性均与薄膜发光层的结晶度相关。 ((Y_2O_3)_<0.6>-(GeO_2)_<0.4>):Mn 和 ((Y_2O_3)_<0.5>-(Ga_2O_3)_<0.5>):Mn 薄膜电致发光器件在最佳条件下制备并由 1 交流正弦波电压驱动，获得了 7000 cd/m^2 以上的高亮度。 千赫兹。

项目成果

Luminescent Properties of Mn-activated Y_2O_3-Ga_2O_3 Multicomponennt Oxide Phosphor Thin Films.

Mn激活Y_2O_3-Ga_2O_3多组分氧化物荧光粉薄膜的发光性能。

• 发表时间: 2003
• 期刊: Conf.Record of 23rd Int.Display Research Conf.
• 作者: T.Minami;Y.Suzuki;T.Miyata
• 通讯作者: T.Miyata

Preparation of Mn-activated Yttrium Germanate Phosphor Thin Film for Electroluminescent Devices

电致发光器件用锰激活锗酸钇荧光粉薄膜的制备

• 发表时间: 2003
• 期刊: Thin Solid Films 425
• 作者: T.Minami;Y.Kobayashi;T.Miyata;M.Yamazaki
• 通讯作者: M.Yamazaki

Preparation of Mn-activated Yttrium Germinate Phosphor Thin Film for Electroluminescent Devices

电致发光器件用锰激活钇锗酸盐荧光粉薄膜的制备

• 发表时间: 2003
• 期刊: Thin Solid Films 425
• 作者: T.Minami;Y.Kobayashi;T.Miyata;M.Yamazaki
• 通讯作者: M.Yamazaki

T.Minami, Y.Kobayashi, T.Miyata, M.Yamazaki: "Preparation of Mn-activated Yttrium Germanate Phosphor Thin Film for Electroluminescent Devices"Thin Soild Films. 425. 35-40 (2003)

T.Minami、Y.Kobayashi、T.Miyata、M.Yamazaki：“用于电致发光器件的锰激活钇酸钇荧光粉薄膜的制备”固体薄膜。

Effect of Driving Frequency on the EL Characteristics of Thick-Ceramic Insulating Type TFEL Devices Using Y_2O_3-based Phosphor Emitting Layer (Invited Paper)

驱动频率对基于Y_2O_3荧光粉发射层的厚陶瓷绝缘型TFEL器件EL特性的影响（特邀论文）

• 发表时间: 2004
• 期刊: IEICE Trans.Electron. 87-C
• 作者: T.Miyata;Y.Suzuki;K.Ihara;T.Minami
• 通讯作者: T.Minami