The study of Y_2O_3-based Oxide Phosphor Thin Film Electroluminescent Devices

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This project introduces newly developed multicomponent oxide host materials for electroluminescent phosphors. These are composed of Y_2O_3 and another binary compound such as Al_2_O3, Ga_2O_3, Gd_2O_3, In_2O_3, B_2O_3 or GeO_2. The various Mn-activated (Y_2O_3)_<1-x>-(oxide)x phosphor thin films were deposited while varying the composition by r.f. magnetron sputtering, sol-gel and postannealed. The obtained electroluminescent and photoluminescent emissions from the ((Y_2O_3)_<1-x>-(oxide)x):Mn phosphor thin-film emitting layers were strongly dependent on the preparation and postannealing conditions as well as on the composition. The highest luminance and photoluminescent intensity were obtained by using a (Y_2O_3)_<1-x>-(oxide)x:Mn thin-film emitting layer prepared with an optimized composition. Both the obtained electroluminescent and photoluminescent characteristics were correlated to the crystallinity of the thin-film emitting layers. High luminances above 7000 cd/m^2 were obtained in ((Y_2O_3)_<0.6>-(GeO_2)_<0.4>):Mn and ((Y_2O_3)_<0.5>-(Ga_2O_3)_<0.5>):Mn thin-film electroluminescent devices fabricated under optimal condition and driven by an ac sinusoidal wave voltage at 1 kHz.