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Property Control of the Multicomponent Oxide Transparent Conducting Thin Films

多元氧化物透明导电薄膜的性能控制

基本信息

批准号：
11650033
负责人：
MINAMI Tadatsugu
金额：
$ 2.3万
依托单位：
Kanazawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650033/
关键词：
Multuicomponent Oxide Transparent and Conducting Thin film Magnetron Sputtering co-doping

项目摘要

Transparent and conductive thin films using new multicomponent oxides consisting of a combination of different binary and ternary compounds have been prepared by r.f. or d.c. magnetron sputtering. Transparent and conductive Zn_2In_2O_5-ZnSnO_3, Zn_2In_2O_5-In_4Sn_3O_<12> and ZnSnO_3-In_4Sn_3O_<12> thin films were prepared over the whole range of compositions in these multicomponent oxides. The electrical, optical, crystaloographcal and chemical properties of these multicomponent thin films were investigated. It was achieved that the electrical and chemical properties of the resulting multicomponent thin films could be controlled by varying the composition in the target. The resistivity, band-gap energy, work function and etching rate of the resulting multicomponent thin films ranged between the properties of the two ternary compound films. As an extension of our previous work, we propose the use of impurity-co-doped oxides for transparent conducting films. For example, Highly transparent and conductive Zn-co-doped ITO (ITO : Zn) thin films were prepared with a Zn content of 0 to 34.1 at% by conventional d.c. magnetron sputtering. A resistivity of 2-3X10^<-4> Ωcm was obtained in ITO : Zn films prepared under optimized conditions with a Zn content of 0-28ar%. The etching rate of ITO : Zn films in a HCl solution could be controlled by the Zn content in the films ; ITO : Zn films prepared with a Zn content of 7.6-34.1 at% wer easily etched in a 1.0 M HCl solution.

使用由不同二元和三元化合物组合组成的新型多组分氧化物，通过 r.f. 制备了透明导电薄膜。或华盛顿特区磁控溅射。在这些多组分氧化物的整个组成范围内制备了透明导电Zn_2In_2O_5-ZnSnO_3、Zn_2In_2O_5-In_4Sn_3O_<12>和ZnSnO_3-In_4Sn_3O_<12>薄膜。研究了这些多组分薄膜的电学、光学、晶体学和化学性质。可以通过改变靶材的成分来控制所得多组分薄膜的电学和化学性质。所得多组分薄膜的电阻率、带隙能、功函数和蚀刻速率介于两种三元化合物薄膜的性质之间。作为我们之前工作的延伸，我们建议使用杂质共掺杂氧化物来制备透明导电薄膜。例如，通过传统的直流电沉积法制备了Zn含量为0至34.1at%的高透明导电Zn共掺杂ITO（ITO：Zn）薄膜。磁控溅射。在优化条件下制备的ITO:Zn薄膜的电阻率为2-3×10^-4Ωcm，Zn含量为0-28ar％。 ITO:Zn薄膜在HCl溶液中的刻蚀速率可以通过薄膜中Zn的含量来控制； ITO：Zn 含量为 7.6-34.1 at% 的 Zn 薄膜很容易在 1.0 M HCl 溶液中蚀刻。