Property Control of the Multicomponent Oxide Transparent Conducting Thin Films

采用由不同二元和三元化合物组成的新型多组分氧化物，用射频磁控溅射法制备了透明导电薄膜。或直流磁控溅射。在这些多元氧化物的整个组成范围内制备了透明导电的Zn_2In_2O_5-ZnSnO_3，Zn_2In_2O_5-In_4Sn_3O_3<12>和ZnSnO_3-<12>In_4Sn_3O_3薄膜。研究了这些多组分薄膜的电学、光学、晶体学和化学性质。结果表明，通过改变靶中的组分，可以控制所得多组分薄膜的电学和化学性质。所得多组分薄膜的电阻率、带隙能、功函数和刻蚀速率介于两种三元化合物薄膜的性质之间。作为我们以前工作的延伸，我们提出了使用杂质共掺杂氧化物的透明导电薄膜。例如，通过常规直流磁控溅射制备Zn含量为0至34.1原子%的高度透明和导电的Zn共掺杂ITO（ITO：Zn）薄膜。在<-4>优化的工艺条件下制备的ITO：Zn薄膜的电阻率为2- 3 × 10 ~（-5）Ω·cm，Zn含量为0- 28%。ITO的蚀刻速率：Zn薄膜在HCl溶液中的腐蚀可以通过薄膜中Zn的含量来控制，Zn含量为7.6- 34.1at%的ITO：Zn薄膜在1.0M HCl溶液中容易被腐蚀。

Transparent and conductive thin films using new multicomponent oxides consisting of a combination of different binary and ternary compounds have been prepared by r.f. or d.c. magnetron sputtering. Transparent and conductive Zn_2In_2O_5-ZnSnO_3, Zn_2In_2O_5-In_4Sn_3O_<12> and ZnSnO_3-In_4Sn_3O_<12> thin films were prepared over the whole range of compositions in these multicomponent oxides. The electrical, optical, crystaloographcal and chemical properties of these multicomponent thin films were investigated. It was achieved that the electrical and chemical properties of the resulting multicomponent thin films could be controlled by varying the composition in the target. The resistivity, band-gap energy, work function and etching rate of the resulting multicomponent thin films ranged between the properties of the two ternary compound films. As an extension of our previous work, we propose the use of impurity-co-doped oxides for transparent conducting films. For example, Highly transparent and conductive Zn-co-doped ITO (ITO : Zn) thin films were prepared with a Zn content of 0 to 34.1 at% by conventional d.c. magnetron sputtering. A resistivity of 2-3X10^<-4> Ωcm was obtained in ITO : Zn films prepared under optimized conditions with a Zn content of 0-28ar%. The etching rate of ITO : Zn films in a HCl solution could be controlled by the Zn content in the films ; ITO : Zn films prepared with a Zn content of 7.6-34.1 at% wer easily etched in a 1.0 M HCl solution.