Theoretical and experimental studies on conducting transparent thin films to obtain highly trasparent films with low sheet resistance

目前，氧化铟锡(ITO)和氧化锡(TO)薄膜已被广泛用作显示器件、透明触摸开关和太阳能电池的透明电极。还要求制备方阻小于1/的透明导电薄膜。众所周知，对于电阻率为10^~(-4)~(-4)cm的透明导电薄膜，其可见光透过率随电阻率的降低而减小。然而，透明导电薄膜的电学性质和光学性质之间的理论关系还不是很清楚，本研究项目的目的是详细研究各种透明导电薄膜的电学和光学性质，并实现低方块电阻低于1/2的薄膜。此外，还解决了透明导电薄膜的实际应用问题。为了实现ITO、TO和杂质掺杂的氧化锌薄膜的低电阻率，我们采用射频磁控溅射的方法在等离子体脉冲磁场中制备了这些薄膜。对这些薄膜在不同条件下的电学和光学性质进行了详细的测量，并讨论了这些性质之间的理论关系。作为获得小于1/的方阻的方法，还讨论了多层结构的透明导电薄膜。

At present, indium tin oxide (ITO) and tin oxide (TO) films have been widely used as transparent electrodes for display devices, transparent touch-switchs and solar cells. It has been also required to prepare a transparent conducting thin film with a sheet resistance below 1 / . It is generally known that the visible transmittance is reduced with decreasing the resistivity for transparent conducting thin films with the resistivity of the order of 10^<-4> cm. However, the theoretical relationship between electrical properties and optical properties of transparent conducting thin films are still poorly understood.The purpose of this reseach project is to investigate the detail of the electrical and optical properties of various transparent conducting thin films, and to realize films with a low-sheet resistance below 1 / . Furthermore, the problem in the pratical use of transparent conducting thin films is also solved. In order to realize ITO, TO and impurity-doped ZnO films with the lowest resistivity, we prepared these films using rf magnetron sputtering in plasma foucsing magnetic field. Detailed measurements of electrical and optical properties were carried out for these films under various conditions, and then the theoretical relationship between these properties was discussed. As the method to obtain the sheet resistance below 1 / , the transparent conducting thin films with multilayer structures is also discussed.