Theoretical and experimental studies on conducting transparent thin films to obtain highly trasparent films with low sheet resistance

点击翻译按钮获取中文摘要

At present, indium tin oxide (ITO) and tin oxide (TO) films have been widely used as transparent electrodes for display devices, transparent touch-switchs and solar cells. It has been also required to prepare a transparent conducting thin film with a sheet resistance below 1 / . It is generally known that the visible transmittance is reduced with decreasing the resistivity for transparent conducting thin films with the resistivity of the order of 10^<-4> cm. However, the theoretical relationship between electrical properties and optical properties of transparent conducting thin films are still poorly understood.The purpose of this reseach project is to investigate the detail of the electrical and optical properties of various transparent conducting thin films, and to realize films with a low-sheet resistance below 1 / . Furthermore, the problem in the pratical use of transparent conducting thin films is also solved. In order to realize ITO, TO and impurity-doped ZnO films with the lowest resistivity, we prepared these films using rf magnetron sputtering in plasma foucsing magnetic field. Detailed measurements of electrical and optical properties were carried out for these films under various conditions, and then the theoretical relationship between these properties was discussed. As the method to obtain the sheet resistance below 1 / , the transparent conducting thin films with multilayer structures is also discussed.