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Theoretical and experimental studies on conducting transparent thin films to obtain highly trasparent films with low sheet resistance

导电透明薄膜以获得低薄层电阻的高透明薄膜的理论和实验研究

基本信息

批准号：
60550014
负责人：
MINAMI Tadatsugu
金额：
$ 1.34万
依托单位：
Kanazawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1985
资助国家：
日本
起止时间：
1985 至 1987
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-60550014/
关键词：
conducting transparent film zinc oxide indium tin oxide tin oxide magnetron sputtering transparent electrode

项目摘要

At present, indium tin oxide (ITO) and tin oxide (TO) films have been widely used as transparent electrodes for display devices, transparent touch-switchs and solar cells. It has been also required to prepare a transparent conducting thin film with a sheet resistance below 1 / . It is generally known that the visible transmittance is reduced with decreasing the resistivity for transparent conducting thin films with the resistivity of the order of 10^<-4> cm. However, the theoretical relationship between electrical properties and optical properties of transparent conducting thin films are still poorly understood.The purpose of this reseach project is to investigate the detail of the electrical and optical properties of various transparent conducting thin films, and to realize films with a low-sheet resistance below 1 / . Furthermore, the problem in the pratical use of transparent conducting thin films is also solved. In order to realize ITO, TO and impurity-doped ZnO films with the lowest resistivity, we prepared these films using rf magnetron sputtering in plasma foucsing magnetic field. Detailed measurements of electrical and optical properties were carried out for these films under various conditions, and then the theoretical relationship between these properties was discussed. As the method to obtain the sheet resistance below 1 / , the transparent conducting thin films with multilayer structures is also discussed.

目前，氧化铟锡（ITO）和氧化锡（TO）薄膜已被广泛用作显示器件、透明触摸开关和太阳能电池的透明电极。还要求制备薄层电阻低于1 /2的透明导电薄膜。众所周知，对于电阻率为10 μ cm量级的透明导电薄膜，可见光透射率随着电阻率的降低而降低<-4>。然而，透明导电薄膜的电学性质与光学性质之间的理论关系还很不清楚，本课题的目的是研究各种透明导电薄膜的电学和光学性质，并实现方块电阻低于1 / .解决了透明导电薄膜在实际应用中存在的问题。为了获得低电阻率的ITO、TO和掺杂ZnO薄膜，我们采用射频磁控溅射法在等离子体聚焦磁场中制备了这些薄膜。在不同条件下对薄膜的电学和光学性质进行了详细的测量，并讨论了这些性质之间的理论关系。作为获得方块电阻小于1 /2的方法，还讨论了多层结构的透明导电薄膜。