Transparent Conductive Multicomponent Oxide Thin Films with High Stability for High Temperature Use

高温稳定性高的透明导电多组分氧化物薄膜

基本信息

批准号：
09650035
负责人：
MINAMI Tadatsugu
金额：
$ 2.18万
依托单位：
Kanazawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650035/
关键词：
Thin film Sputtering Transparent conductive film Multicomponent oxide Zinc oxide Indium oxide Tin oxide ITO

项目摘要

A number of transparent conductive oxide (TCO) films consisting of binary compounds such as ZnO, In_20_3 and SnO_2 ternary compounds such as Zn_2In_2O_5, In_4Sn_30_<12>, GaIn0_3, ZnSn0_3, and MgIn_2O_4 and multicomponent oxides composed of combinations of binary compounds or ternary compounds were tested for stability in various atmospheres at high temperatures. The TCO films were prepared by magnetron sputtering on quartz substrates at room temperature or 350ﾟC and tested in air, argon gas or a vacuum at temperatures up to 1000ﾟC.Concerning the stability of their electrical properties, SnO_2, SnO_2 : Sb and In_4Sn_30_<12> films prepared at 350ﾟC were stable in air at temperatures up to 900ﾟC.TCO films such as In_20_3, ITO, SnO_2, SnO_2 : Sb and In_4Sn_30_<12> were stable in an Ar gas atmosphere at temperatures up to 900ﾟC.The stability of multicomponent oxide films was controlled by changing the composition of films. In partictular, the stability was improved as the Sn content in TCO films was increased, but it was decreased as the Zn, Mg and/or Ga contents were increased. The resistivity increase found in TCO films that contained Zn was attributed to grain boundary scattering resulting from oxygen adsorption. As a result, the chemical stability at high temperatures was mainly determined by the metal elements contained in the TCO film ; high stability was exhibited in TCO films rich in Sn.

许多透明的导电氧化物（TCO）膜，由ZnO，IN_20_3和SNO_2二进制化合物组成在高温下测试了各种气氛中的稳定性。 TCO膜是在室温下或350 c c上通过磁铁溅射在石英底物上制备的，并在高达1000℃的温度下在空气，氩气或真空中进行测试。C.CONCODCONSCECCERT稳定性，SNO_2，SNO_2，SNO_2：SB和IN_4SN_30_30_30_30_30_30_ <12> films at priact at priact at 350 c. 900 c.tco膜，例如IN_20_3，ITO，SNO_2，SNO_2：SB和IN_4SN_30_ <12>它们在高达900°C的AR气氛中在AR气氛中保持稳定，最多可通过更改膜的组成来控制多组分氧化物膜的稳定性。特别是，随着TCO膜中的SN含量的增加，稳定性得到了提高，但是随着Zn，Mg和/或GA含量的增加，它的稳定性减少了。在包含Zn的TCO膜中发现的电阻增加归因于氧气增加的晶界散射。结果，高温下的化学稳定性主要取决于TCO膜中包含的金属元素。在富含SN的TCO膜中暴露了高稳定性。