Preparation of an inorganic thin film electroluminescent devices using gallium oxide phosphor

采用溶胶-凝胶法制备了高亮度Ga_2O_3: Mn TFEL器件，消除了真空工艺的需要。溶胶-凝胶工艺还消除了对快速升温的热处理的需要。以乙酰丙酮镓为Ga源，采用溶胶-凝胶法制备了Ga_2O_3: Mn薄膜发射层。值得注意的是，溶胶-凝胶法制备的Ga_2O_3: Mn TFEL器件在1kHz和60hz驱动下的亮度分别为1271 cd/m^2和401 cd/m^2，亮度最高。此外，采用溶胶-凝胶法制备了Ga_2O_3: Mn， Cr荧光粉薄膜，可制备多色TFEL器件。在TFEL器件中，采用Cr含量高达2 at的Ga_2O_3: Mn， Cr薄膜共掺杂，获得了100cd/m^2以上的高亮度。%， Mn含量0.3 at。%，驱动频率为1kHz。当共掺杂Cr含量在0 ~ 10at .%范围内变化时，Ga_2O_3: Mn， Cr TFEL器件的发射色由绿色变为红色。随着施加电压的增加，发射颜色由绿色变为红色。因此，采用溶胶-凝胶法制备Ga_2O_3: Mn和Ga_2O_3: Mn， Cr氧化物荧光粉TFEL器件是一种廉价的方法，该方法采用乙酰丙酮镓、氯化锰和乙酰丙酮铬为原料，在TFEL显示器和灯具上非常有前景。

High luminance Ga_2O_3 : Mn TFEL devices were fabricated by sol-gel process which eliminate the need for vacuum processes. The sol-gel process also eliminates the need for a heat treatment with a rapid temperature rise. The Ga_2O_3 : Mn thin-film emitting layer was prepared using sol-gel process with gallium acethylacetonate as the Ga source. It should be noted that the highest luminance was obtained with a Ga_2O_3 : Mn TFEL device fabricated by the sol-gel process : luminance of 1271 and 401 cd/m^2 in a device driven at 1kHz and 60 Hz, respectively. In addition, multicolor emitting TFEL devices using Ga_2O_3 : Mn, Cr phosphor thin films could be prepared by chemical deposition using the sol-gel process. A high luminance above 100cd/m^2 was obtained in TFEL devices using Ga_2O_3 : Mn, Cr thin films co-doped with a Cr content up to 2 at.% and Mn content of 0.3 at.% and driven at 1kHz. The emission color from these Ga_2O_3 : Mn, Cr TFEL devices changed from green to red as the co-doped Cr content was varied from 0 to 10 at.%. The emission color changed from green to red as the applied voltage was increased. Thus, this inexpensive method of fabricating Ga_2O_3 : Mn and Ga_2O_3 : Mn, Cr oxide phosphor TFEL devices by a sol-gel process using gallium acethylacetonate, manganese chloride and chromium acethylacetonate is very promising for TFEL displays and lamps.