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Survey for rare earth doped chalcogenide glasses with high intensity of luminescence.

Survey for rare earth doped chalcogenide glasses with high intensity of luminescence.
高发光强度稀土掺杂硫系玻璃的研究
批准号:
15560301
负责人:
MAEDA Kouji
金额:
$2.11万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2005

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中文摘要
翻译
硫系玻璃具有声子能量低、折射率高、红外透过率高等特点。掺Er(Er^<3+>)硫系玻璃是1550 nm附近有源光波导应用的重要候选材料。我们研究了掺Er^<3+>的硫系玻璃。以Ge(5N)、Se(5N)、Ga(5N)和Er_2S_3(3N)为原料,采用熔体淬火技术,从1000℃到水中淬火制备了块体样品。根据Er~(2+)在1450 nm处的透过率和对Er~(2+)和Gt~(3+)的吸收效率来评价Er的溶解度。除了低(<3at.%)Ga浓度外,玻璃允许在所有玻璃形成区溶解1at.%的Er。在GeSe_2和Ga_2Se_3的化学计量关系线上,当Er的含量为4at.%左右时,Er的溶解度最佳。光致发光是由波长为980 nm的激光激发的。当Ga含量为10-14at.%时,在联络线上观察到最大的光致发光强度。我们发现,当Er~(2+)浓度达到2at.%时,发光强度随Er~(2+)浓度的增加而成比例增加,超过这个浓度后,发光强度不变或减小。因此,在这些玻璃基质中,Er^<3+>离子似乎很好地分散和光学活性,直到Er浓度约为2at.%。掺Er~(2+)、In~(3+)、Gt~(3+)的玻璃在Ga含量超过18.at%时,玻璃基质变得不均匀。由于这种行为只在掺Er玻璃中观察到,Er^<3+>离子的存在似乎有助于玻璃基质的失稳(相分离或结晶)。观察了热处理和Se对Te的替代作用。在不改变荧光光谱的情况下,发光强度增加到50%-100%。Er^<3+>离子将保持在-Se^<-δ>-Ga^<+δ>-的共价键附近,因为这两个原子的电负性差异导致了Se和Ga之间的离子键。然后,Er^<3+>离子被一定数量的Se原子吸引。
英文摘要
Chalcogenide glasses have useful properties such as low phonon energies, high refractive index, and high transmittance in the infrared. Erbium (Er^<3+>) doped chalcogenide glasses are important candidates for active optical wave guide applications at around 1550nm. We investigated Er^<3+> doped chalcogenide glasses. Bulk samples were prepared using Ge (5N), Se (5N), Ga (5N), and Er_2S_3 (3N) by melt quenching technique by quenching from 1000 ℃ to water. We evaluated the solubility of Er according to optical transmission at 1450nm and efficiency of absorption for Er^<3+>. The glasses allowed to solute 1at.% of Er over the all glass forming region except for low (<3at.%) Ga concentration. On the tie-line of stoichiometry between GeSe_2 and Ga_2Se_3 the solubility of Er is best as about 4 at.% of Er. The photoluminescence (PL) was excited from a laser operating at a wavelength of 980 nm. The maximum intensity of PL was observed on the tie-line at 10-14at.% of Ga. We found that PL intensity increased proportionally with Er^<3+> concentration up to 2 at.% and than it is constant or decreases above this concentration. Consequently Er^<3+> ions seem to be well dispersed and optically active up to Er concentration of about 2 at.% in these glass matrices. The glass matrix of Er^<3+> doped glasses becomes inhomogeneous above 18.at.% of Ga content. As this behaviour was observed only for Er-doped glasses, the presence of Er^<3+> ions seem to aid glass matrix destabilization (phase separation, or crystallization). The effect of thermal annealing and substitution of Se to Te were observed. The PL intensity increased to 50%-100% without the change of PL spectra. Er^<3+> ions would stay near the covalent bond of -Se^<-δ>-Ga^<+δ>- because the difference in the electronegativity of both atoms caused the ionic bonding between Se and Ga. Then Er^<3+> ion attracted to some number of Se atoms.
期刊论文(38)
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会议论文
THERMAL AND OPTICAL ANALYSIS OF Ge-Ga-Se CHALCOGENIDE GLASSES
Ge-Ga-Se硫属化物玻璃的热光学分析
DOI: --
发表时间: 2006
期刊: OPTICAL PROPERTIES OF Er-DOPED Ga_x(Ge_30Se_70)_100-_x GLASSES. 28
影响因子: --
作者: [M.Munzar]
通讯作者: M.Munzar
Influence of Ga on the optical and thermal properties of Er_2S_3 doped stoichiometric and nonstoichiometric Ge-Ga-Se glasses.
Ga对Er_2S_3掺杂化学计量和非化学计量Ge-Ga-Se玻璃光学和热性能的影响
DOI: --
发表时间: 2005
期刊: Phys.Chem.Glasses 46
影响因子: --
作者: [M.Munzar, M.Munzar, K.Maeda, M.Munzar, K.Maeda, M.Munzar]
通讯作者: M.Munzar
Effect of three stage isothermal annealing on nucleation process in GeSe_2 glasses
三阶段等温退火对GeSe_2玻璃成核过程的影响
DOI: --
发表时间: 2003
期刊: J.Mater.Sci. : Mater.Electro. 14
影响因子: --
作者: [M.Munzar, M.Munzar, K.Maeda, M.Munzar, K.Maeda, M.Munzar, K.Maeda, K.Maeda, M.Munzar, K.Sakai, K.Maeda]
通讯作者: K.Maeda
EFFECT OF THERMAL ANNEALING ON THE PHOTOLUMINESCENCE OF Er DOPED Ge-Se-Ga GLASSES.
热退火对掺铒 Ge-Se-Ga 玻璃光致发光的影响。
DOI: --
发表时间:
期刊: Physics and Chemistry of Glasses (Accepted)
影响因子: --
作者: [M.Munzar, M.Munzar, K.Maeda, M.Munzar, K.Maeda, M.Munzar, K.Maeda, K.Maeda, M.Munzar, K.Sakai, K.Maeda, K.Sakai, K.Maeda, T.Sakai, K.Maeda, T.Sakai, K.Maeda]
通讯作者: K.Maeda
16
    Fundamental Study for New Crystal Capsule Formed by Using Nucleation of mutual anti-solvent crystallization
    • 批准号:
      21560782
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.0万
    • 财政年份:
      2009
    • 负责人:
      MAEDA Kouji
    • 依托单位:
    Development of new crystallization and its splay-dry micro unit to generate nano-meter size crystals
    • 批准号:
      17560665
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.66万
    • 财政年份:
      2005
    • 负责人:
      MAEDA Kouji
    • 依托单位:
    Development of sensitive detection of crystalline defects in wide gap semiconductor by Raman scattering measurements
    • 批准号:
      12650017
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $1.92万
    • 财政年份:
      2000
    • 负责人:
      MAEDA Kouji
    • 依托单位:
    海外基金