Survey for rare earth doped chalcogenide glasses with high intensity of luminescence.

硫系玻璃具有声子能量低、折射率高、红外透过率高等优点。掺铒（Er^<3+>）的硫族玻璃是在1550 nm附近的有源光波导应用的重要候选者。我们研究了Er^<3+>掺杂的硫系玻璃.采用1000 ℃淬冷法制备了Ge（5 N）、Se（5 N）、Ga（5 N）和Er_2S_3（3 N）的体样品。我们根据1450 nm处的光透射率和对Er^<3+>的吸收效率来评估Er的溶解度。玻璃允许溶解1at.% Er在所有玻璃形成区域上的分布，除了低（<3at.%）Ga浓度。在GeSe_2和Ga_2Se_3的化学计量关系线上，Er的最佳溶解度约为4at.%的呃。光致发光（PL）由在980 nm波长下操作的激光激发。在10- 14 at.%的浓度范围内，PL谱的最大强度出现在连接线上的Ga。我们发现，当Er^<3+>浓度达到2at.%时，荧光强度随Er^<3+>浓度的增加而成正比增加然后它保持不变或降低到高于该浓度。因此，Er^<3+>离子似乎分散良好，并且在Er浓度高达约2at.%时具有光学活性。在这些玻璃基质中。Er^<3+>掺杂量超过18.at.%时，玻璃基质变得不均匀的Ga含量。由于这种行为仅在掺铒玻璃中观察到，因此Er^<3+>离子的存在似乎有助于玻璃基质的不稳定化（相分离或结晶）。观察了热退火和Se对Te的替代效应。PL强度增加到50%-100%，而PL光谱没有变化。Er^<3+>离子会停留在-Se^<-δ>-Ga^<+δ>-的共价键附近，因为两个原子的电负性不同导致Se和Ga之间形成离子键。然后Er^<3+>离子被吸引到一定数量的Se原子上。

Chalcogenide glasses have useful properties such as low phonon energies, high refractive index, and high transmittance in the infrared. Erbium (Er^<3+>) doped chalcogenide glasses are important candidates for active optical wave guide applications at around 1550nm. We investigated Er^<3+> doped chalcogenide glasses. Bulk samples were prepared using Ge (5N), Se (5N), Ga (5N), and Er_2S_3 (3N) by melt quenching technique by quenching from 1000 ℃ to water. We evaluated the solubility of Er according to optical transmission at 1450nm and efficiency of absorption for Er^<3+>. The glasses allowed to solute 1at.% of Er over the all glass forming region except for low (<3at.%) Ga concentration. On the tie-line of stoichiometry between GeSe_2 and Ga_2Se_3 the solubility of Er is best as about 4 at.% of Er. The photoluminescence (PL) was excited from a laser operating at a wavelength of 980 nm. The maximum intensity of PL was observed on the tie-line at 10-14at.% of Ga. We found that PL intensity increased proportionally with Er^<3+> concentration up to 2 at.% and than it is constant or decreases above this concentration. Consequently Er^<3+> ions seem to be well dispersed and optically active up to Er concentration of about 2 at.% in these glass matrices. The glass matrix of Er^<3+> doped glasses becomes inhomogeneous above 18.at.% of Ga content. As this behaviour was observed only for Er-doped glasses, the presence of Er^<3+> ions seem to aid glass matrix destabilization (phase separation, or crystallization). The effect of thermal annealing and substitution of Se to Te were observed. The PL intensity increased to 50%-100% without the change of PL spectra. Er^<3+> ions would stay near the covalent bond of -Se^<-δ>-Ga^<+δ>- because the difference in the electronegativity of both atoms caused the ionic bonding between Se and Ga. Then Er^<3+> ion attracted to some number of Se atoms.