Survey for rare earth doped chalcogenide glasses with high intensity of luminescence.

高发光强度稀土掺杂硫系玻璃的研究

• 批准号: 15560301
• 负责人: MAEDA Kouji
• 金额: $ 2.11万
• 依托单位: University of Miyazaki
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560301/
• 关键词: chalcogenide glass; glass transition temperature; rare earth element; erbium; photoluminescence; light absorption; raman spectra; solubility; ツリウム; 光導波路

Chalcogenide glasses have useful properties such as low phonon energies, high refractive index, and high transmittance in the infrared. Erbium (Er^<3+>) doped chalcogenide glasses are important candidates for active optical wave guide applications at around 1550nm. We investigated Er^<3+> doped chalcogenide glasses. Bulk samples were prepared using Ge (5N), Se (5N), Ga (5N), and Er_2S_3 (3N) by melt quenching technique by quenching from 1000 ℃ to water. We evaluated the solubility of Er according to optical transmission at 1450nm and efficiency of absorption for Er^<3+>. The glasses allowed to solute 1at.% of Er over the all glass forming region except for low (<3at.%) Ga concentration. On the tie-line of stoichiometry between GeSe_2 and Ga_2Se_3 the solubility of Er is best as about 4 at.% of Er. The photoluminescence (PL) was excited from a laser operating at a wavelength of 980 nm. The maximum intensity of PL was observed on the tie-line at 10-14at.% of Ga. We found that PL intensity increased proportionally with Er^<3+> concentration up to 2 at.% and than it is constant or decreases above this concentration. Consequently Er^<3+> ions seem to be well dispersed and optically active up to Er concentration of about 2 at.% in these glass matrices. The glass matrix of Er^<3+> doped glasses becomes inhomogeneous above 18.at.% of Ga content. As this behaviour was observed only for Er-doped glasses, the presence of Er^<3+> ions seem to aid glass matrix destabilization (phase separation, or crystallization). The effect of thermal annealing and substitution of Se to Te were observed. The PL intensity increased to 50%-100% without the change of PL spectra. Er^<3+> ions would stay near the covalent bond of -Se^<-δ>-Ga^<+δ>- because the difference in the electronegativity of both atoms caused the ionic bonding between Se and Ga. Then Er^<3+> ion attracted to some number of Se atoms.

硫系玻璃具有声子能量低、折射率高、红外透过率高等特性。铒（Er^<3+>）掺杂硫系玻璃是1550nm左右有源光波导应用的重要候选者。我们研究了Er^<3+>掺杂的硫系玻璃。以Ge （5N）、Se （5N）、Ga （5N）和Er_2S_3 （3N）为原料，采用熔体淬火技术，在1000℃至水中淬火，制备了本体样品。我们根据1450nm的光透射率和Er^<3+>的吸收效率来评估Er的溶解度。玻璃杯被允许溶化。在除低（<3at）外的所有玻璃形成区域，Er的%。%) Ga浓度。在GeSe_2和Ga_2Se_3的化学计量联线上，Er的溶解度最好，约为4 at。%的Er。光致发光（PL）是由工作在980 nm波长的激光激发的。10 ~ 14at系线处PL强度最大。%的Ga。我们发现，当Er^<3+>浓度达到2 at时，PL强度成比例增加。%，然后保持不变或在此浓度以上下降。因此，当Er浓度约为2 at时，Er^<3+ b>离子似乎具有良好的分散性和光学活性。%在这些玻璃基质中。Er^<3+>掺杂玻璃的玻璃基体在18 at以上变得不均匀。%的Ga含量。由于这种行为仅在掺铒玻璃中观察到，因此Er^<3+ b>离子的存在似乎有助于玻璃基体的不稳定（相分离或结晶）。观察了热退火和Se to Te取代的影响。在不改变发光光谱的情况下，发光强度提高到50% ~ 100%。Er^<3+>离子会停留在-Se^<-δ>-Ga^<+δ>-的共价键附近，因为两个原子的电负性差异导致了Se和Ga之间的离子键。然后Er^<3+ >0离子被一定数量的Se原子吸引。

项目成果

THERMAL AND OPTICAL ANALYSIS OF Ge-Ga-Se CHALCOGENIDE GLASSES

Ge-Ga-Se硫属化物玻璃的热光学分析

• 发表时间: 2006
• 期刊: OPTICAL PROPERTIES OF Er-DOPED Ga_x(Ge_30Se_70)_100-_x GLASSES. 28
• 作者: M.Munzar

Influence of Ga on the optical and thermal properties of Er_2S_3 doped stoichiometric and nonstoichiometric Ge-Ga-Se glasses.

Ga对Er_2S_3掺杂化学计量和非化学计量Ge-Ga-Se玻璃光学和热性能的影响

• 发表时间: 2005
• 期刊: Phys.Chem.Glasses 46
• 作者: M.Munzar;M.Munzar;K.Maeda;M.Munzar;K.Maeda;M.Munzar
• 通讯作者: M.Munzar

Effect of three stage isothermal annealing on nucleation process in GeSe_2 glasses

三阶段等温退火对GeSe_2玻璃成核过程的影响

• 发表时间: 2003
• 期刊: J.Mater.Sci. : Mater.Electro. 14
• 作者: M.Munzar;M.Munzar;K.Maeda;M.Munzar;K.Maeda;M.Munzar;K.Maeda;K.Maeda;M.Munzar;K.Sakai;K.Maeda
• 通讯作者: K.Maeda

EFFECT OF THERMAL ANNEALING ON THE PHOTOLUMINESCENCE OF Er DOPED Ge-Se-Ga GLASSES.

热退火对掺铒 Ge-Se-Ga 玻璃光致发光的影响。

• 期刊: Physics and Chemistry of Glasses (Accepted)
• 作者: M.Munzar;M.Munzar;K.Maeda;M.Munzar;K.Maeda;M.Munzar;K.Maeda;K.Maeda;M.Munzar;K.Sakai;K.Maeda;K.Sakai;K.Maeda;T.Sakai;K.Maeda;T.Sakai;K.Maeda
• 通讯作者: K.Maeda

The influence of Te on thermal properties of Er-doped(Ge_<30>(Se_<1-x>Te_x)_<70>)_<94>Ga_6 chalcogenide glasses.

Te对Er掺杂(Ge_<30>(Se_<1-x>Te_x)_<70>)_<94>Ga_6硫系玻璃热性能的影响。

• 发表时间: 2005
• 期刊: Mater.Sci.Eng.B 122
• 作者: M.Munzar;M.Munzar;K.Maeda;M.Munzar;K.Maeda;M.Munzar;K.Maeda
• 通讯作者: K.Maeda