Development of sensitive detection of crystalline defects in wide gap semiconductor by Raman scattering measurements

通过拉曼散射测量开发宽带隙半导体晶体缺陷的灵敏检测

• 批准号: 12650017
• 负责人: MAEDA Kouji
• 金额: $ 1.92万
• 依托单位: MIYAZAKI UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650017/
• 关键词: SiC; stacking faults; Raman probe measurements; polytype; carrier concentration; ceramics; LO phonon plasmon coupled model; ラマン分光; ラマン散乱; 積層欠陥評価; ラマンイメージング; ラマン強度プロファイルの解析

Raman spectra of 3C, 6H, 4H-SiC crystals including stacking faults have been examined using a backscattering geometry. It is found that the intensity of the transverse optical phonon band at 796 cm^<-1>, which corresponds to the phonon mode at the gamma point in 3C-SiC, is sensitive to the stacking faults. We found that the intensity of this band depends on the stacking fault density. These results are explained on the basis of the bond polarizability model. The spatial distribution of the stacking faults is studied by Raman image measurements. The carrier concentration is determined from the line shape analysis of the LO phonon plasmon coupled model. We evaluate the spatial distribution of the carrier concentration and the mobility for modulation-doped 6H-SiC crystals. Our experimental results demonstrate the Raman micro probe imaging is useful to analyze local electrical properties. We also evaluate the polytype phases of the SiC ceramics from Raman probe measurements. The volume contents measured by the Raman intensity of the folded modes of 4H and 15R polytype phases relative to that of the 6H phase in the ceramics are consistent with those determined from x-ray diffraction analysis. We can examine the relation between the spatial distributions of the polytype domains and crystalline grains with a resolution of micro-meter scale.

用背散射几何学方法研究了含层错的3C，6 H，4 H-SiC晶体的拉曼光谱。发现3C-SiC中γ点处的声子模对应的796 cm-3处的横向光学声子带的强度<-1>对层错敏感。我们发现，这个带的强度依赖于堆垛层错密度。这些结果的基础上解释的键极化率模型。通过拉曼图像测量研究了层错的空间分布。载流子浓度由LO声子等离激元耦合模型的线形分析确定。我们评估了调制掺杂的6 H-SiC晶体的载流子浓度和迁移率的空间分布。我们的实验结果表明，拉曼微探针成像是有用的，以分析局部的电学性质。我们还评估了多型相的SiC陶瓷从拉曼探针测量。通过拉曼光谱测量的4 H和15 R多型相相对于6 H相的折叠模强度与X射线衍射分析结果一致。我们可以用微米级的分辨率来研究多型畴的空间分布与晶粒尺寸之间的关系。

项目成果

中島信一, 播磨弘, 勝野正和, 大谷昇: "ラマン散乱分光法によるSiCの積層欠陥の評価"FEDジャーナル. Vol.11, No.2. 57-60 (2000)

Shinichi Nakajima、Hiroshi Harima、Masakazu Katsuno、Noboru Otani：“通过拉曼散射光谱评估 SiC 中的堆垛层错”FED Journal 第 11 卷，第 57-60 期（2000 年）。

T.Tomita, S.Saito, M.Baba, M.Hundhausen, T.Suemoto, S.Nakashima: "Selectively Resonant Rainan Spectra of Folded Phonon Modes in SiC""Materials Science Forum. 338-342. 587-590 (2000)

T.Tomita、S.Saito、M.Baba、M.Hundhausen、T.Suemoto、S.Nakashima：“SiC 中折叠声子模式的选择性共振 Rainan 谱””材料科学论坛。338-342.587-590（2000 年）

S.Nakashima, H.Harima: ""Raman Imaging of Semiconductor Materials : Characterization of Static and Dynamic properties""Inst. Phys. Conf. Ser.. No165:Symposium. 25 (2000)

S.Nakashima、H.Harima：“半导体材料的拉曼成像：静态和动态特性的表征”Inst。

T.Tomita, S.Saito, M.Baba, M.Hundhausen, T.Suemoto, S.Nakashima: ""Selectively Resonant Raman Spectra of Folded Phonon Modes in SiC""Materials Science Forum. 338-342. 587-590 (2000)

T.Tomita、S.Saito、M.Baba、M.Hundhausen、T.Suemoto、S.Nakashima：“SiC 中折叠声子模式的选择性共振拉曼光谱”材料科学论坛。

T. Tomita, S. Saito, M. Baba, M. Hundhausen, T. Suemoto, and S. Nakashima: "Selectively resonant Raman spectra of folded phonon modes in SiC"Materials Science Forum. 338-342. 587-590 (2000)

T. Tomita、S. Saito、M. Baba、M. Hundhausen、T. Suemoto 和 S. Nakashima：“SiC 中折叠声子模式的选择性共振拉曼光谱”材料科学论坛。