STUDIES ON MEASUREMENTS OF RADICALS IN GAS PHASE USING SPECTROSCOPY TECHNIQUES

利用光谱技术测量气相自由基的研究

• 批准号: 05237104
• 负责人: GOTO Toshio
• 金额: $ 67.84万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research on Priority Areas
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05237104/
• 关键词: FREE RADICAL; PLASMA; LASER; PARTICLES; MODELING; SPECTROSCOPY; PROCESS; ION; シリコン

(1) CFx (X=1-3), SiHx (X=1-3) and Si radicals in plasmas excited by some plasma sources were investigated by infrared diode laser absorption spectroscopy and various kinds of laser spectroscopy technologies, and the behaviors of radicals was clarified. The techniques to control the density and compositon of CFx (X=1-3) radicals were developed.(2) A set of cross action data on electron-impact dissociation of reactive molecules into neutral radicals was obtained. Ionic species dissociatively scattered from the surface were measured when the ions were incident on the surface. The surface reaction of CF_2 radicals for etching processes were clarified.(3) The density of H radicals in a parallel plate RF silane plasma were measured by laser fluorescence technique, namely two-photon excitation at 205nm and the behavior of H radicals was clarified.(4) The role of H radicals in the formation of poly-crystalline Si films at a low temperature was investigated and it was clarified that H radicals playd an important role. The surface of Si exposed to CF_4 plasma was observed by phase-modulated FT-IR spectroscopy developed in this study. It was found that the particles grew through electrostatic forces and/or attractive force in the methane plasma and the spatial arrangement of particle was formed. The mechanism of this pseudo two-dimensional alignment was investigated.(5) It was found that the key species contributing to the particle nucleation were short-life radicals, especially SiH_2 and they participated many times in the initial growth process using laser and probe techniques.(6) Space-and time-resolved emission spectroscopy was applied to obtain the information on the behavior of the plasma structure at a capacitively coupled plasma. It was found that the sheath width increased with increasing the dissipated power. Moreover, it was confirmed that the synergism in the reaction between O and O^- produced in abundance in O_2 plasma.

(1)利用红外二极管激光吸收光谱和各种激光光谱技术研究了不同等离子体源激发等离子体中的CFx （X=1-3）、SiHx （X=1-3）和Si自由基，明确了自由基的行为。研究了控制CFx （X=1-3）自由基密度和组成的技术。(2)获得了一组反应分子电子冲击解离成中性自由基的交叉作用数据。当离子入射到表面时，测量了从表面离解散射的离子种类。阐明了蚀刻过程中CF_2自由基的表面反应。(3)采用激光荧光技术测量了平行板射频硅烷等离子体中H自由基的密度，即在205nm处双光子激发，明确了H自由基的行为。(4)研究了H自由基在低温下形成多晶Si薄膜中的作用，明确了H自由基在低温下形成多晶Si薄膜中的重要作用。利用自制的相位调制傅里叶红外光谱对暴露在CF_4等离子体中的Si表面进行了观察。结果表明，甲烷等离子体中的粒子在静电力和引力作用下生长，形成了粒子的空间排列。对这种伪二维对准的机理进行了研究。(5)利用激光和探针技术发现，促进颗粒成核的关键物质是短寿命自由基，尤其是SiH_2，它们多次参与了初始生长过程。(6)利用空间分辨和时间分辨发射光谱技术，获得了电容耦合等离子体中等离子体结构的行为信息。结果表明，护套宽度随耗散功率的增大而增大。此外，还证实了在O_2等离子体中，O和O^-之间的协同作用大量产生。

项目成果

Y.Watamabe: "Experimental Investigation of Particulate Formation in He-SiH_4 Modulated RF Discharges" Plasma Sources Sci.Technol.3. 286-290 (1994)

Y.Watamabe：“He-SiH_4 调制射频放电中颗粒形成的实验研究”等离子源 Sci.Technol.3。

Y.Watamabe: "Effects of Particles on He-SiH_4 Modulated RF Discharges" Plasma Sources Sci.Technol.3. 355-359 (1994)

Y.Watamabe：“粒子对 He-SiH_4 调制射频放电的影响”等离子体源 Sci.Technol.3。

Shoji Den et al.: "Diagnostics of fluorocarbon radicals in a large-area permanent magnet electron cyclotron resonance etching plasma" Jpn.J.Appl.Phys.35-12B. 6528-6533 (1996)

Shoji Den 等人：“大面积永磁体电子回旋共振蚀刻等离子体中氟碳自由基的诊断”Jpn.J.Appl.Phys.35-12B。

M.Ikeda: "Synthesis of diamond using RF magnetron methanol plasma CVD assisted by hydrogen radical injection" Jpn.J.Appl.Phys.34. 2484-2488 (1995)

M.Ikeda：“利用氢自由基注入辅助的射频磁控管甲醇等离子体 CVD 合成金刚石”Jpn.J.Appl.Phys.34。

M.Ikeda: "CH_3 radical density in electron cyclotron resonance CH_3OH and CH_3OH/H_2 plasmas" Jpn.J.Appl.Phys.34. 3273-3277 (1995)

M.Ikeda：“电子回旋共振CH_3OH和CH_3OH/H_2等离子体中的CH_3自由基密度”Jpn.J.Appl.Phys.34。