Studies on surface reaction process and thin film formation by controlling radicals
Studies on surface reaction process and thin film formation by controlling radicals
批准号:
08405005
负责人:
GOTO Toshio
金额:
$21.95万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1998
中文摘要
在本项目中,我们首先系统地研究了硅烷/氢混合气体在ECR等离子体中沉积薄膜的结晶度与气相信息的相关性。结果表明,离子通量的降低有助于结晶度的提高。在此基础上,我们开发了一种新的方法来沉积无离子的薄膜,即只有中性的永磁体。利用这种方法,我们成功地合成了高结晶度、表面光滑的多晶薄膜。然而,沉积速率降低到传统方法的十分之一。为了解决这个问题,我们尝试了一种新的两步生长方法。在该方法中,离子在生长初期通过永磁体去除。该步骤完成后,将永磁体从等离子体中去除,使用传统的ECR硅烷/氢等离子体沉积薄膜。更确切地说,包括离子和中性物质。因此,我们成功地合成了结晶度高、表面光滑、沉积速率相对较高的薄膜。此外,我们还发现离子种类对结晶相成核的干扰尤为明显。在金刚石的形成过程中,我们利用真空紫外吸收光谱和光学发射光谱从自由基行为与薄膜质量的关系出发,阐明了自由基的作用。因此,碳原子促进了非金刚石相的形成,OH自由基促进了氢原子终止金刚石表面的抽离反应。在1996年至1998年的这个项目中,我们成功地通过阐明多晶硅和金刚石薄膜形成过程中的作用获得了重要的发现。此外,在此基础上,我们成功地开发了通过控制自由基来获得更高质量薄膜的方法。少
英文摘要
In this project, firstly we investigated systematically the correlation between the crystallinity of the deposited films and the information of gas phase in ECR plasma using silane / hydrogen mixture gases. As a result, we found that the reduction of ion flux contributed to the improvement of the crystallinity. On the basis of this result, we developed a novel method for depositing films without ionic species, namely, only neutral species using permanent magnets. Using this method, we have successfully synthesized the polycrystalline films with high crystallinty and smooth surfase. However, the deposition rate was reduced to be a tenth of that using the conventional method. To solve this problem, we have tried a novel two step growth method. In the method, ionic species were removed at the initial growth stage by using permanent magnets. After this step, the permanent magnets were removed from the plasma, the films were deposited by using the conventional ECR silane/hydrogen plasma., n … More amely including ionic and neutral species. As a result, we have successfully synthesized the films with high crystallinity, smooth surface and relatively high deposition rate. Moreover, we have found that ionic species disturb the nucleation of the crystalline phase especially.In a diamond formation process, we have clarified the role of radicals from the correlation between the film quality and the behaviors of the radicals using vacuum ultraviolet absorption spectroscopy and optical emission spectroscopy. As a result, carbon atom contributes to the formation of non-diamond phase while OH radical promotes the abstraction reaction of hydrogen atom terminating the diamond surface.In this project from 1996 to 1998, we have successfully obtained important findings by elucidating the roles in the polycrystalline silicon and diamond film formation processes. Moreover, on the basis of the findings, we have successfully developed the methods promising to obtain the films with further better quality by controlling the radicals. Less
期刊论文(35)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
R.Nozawa et.al: "Substrate DC bias effects on low temperature polycrystalline silicon formation in electron cyclotron resonance plasma-enhanced chemical vapor deposition" J. Appl. Phys.79・6. 8035-8039 (1997)
R. Nozawa 等人:“电子回旋共振等离子体增强化学气相沉积中的基板直流偏压对低温多晶硅形成的影响”J. Appl.79・6(1997)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Y.Yamamoto et.al: "Effects of dilution gases on Si atom and SiHx^+(x=0-3)ions in electron cyclotron resonance SiH4 plasma" Jpn. J. Appl. Phys.36・7B. 4664-4669 (1997)
Y. Yamamoto 等人:“稀释气体对电子回旋共振 SiH4 等离子体中 Si 原子和 SiHx^+(x=0-3) 离子的影响”Jpn. J. Phys. 4664-4669 ( 1997)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Y.Yamamoto et.al.: "Effect of dilution gases on Si atom and SiHx^+(x=0-3)in ECR SiH_4 plasma" Proc.of 3rd int.conf.reactive plasmas. 449-450 (1996)
Y.Yamamoto 等人:“稀释气体对 ECR SiH_4 等离子体中 Si 原子和 SiHx^ (x=0-3) 的影响”Proc.of 3rd int.conf.reactive Plasmas。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
R.Nozawa et.al.: "In situ Obserbation of Hydrogenated Amorphous Silicon Surface during Electron Cyclotron Resonance Hydrogen Plasma Annealing Using Polarization Modulation Infrared Reflection Absorption Spectroscopy" Proc.of 44rd National Symposium of Ame
R.Nozawa 等:“使用偏振调制红外反射吸收光谱法在电子回旋共振氢等离子体退火过程中对氢化非晶硅表面进行原位观察”第 44 届美国全国研讨会论文集
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
R.Nozawa et.al.: "In-Situ PM-IR-RAS Observation of ECR Hydrogen Plasma Annealing Process" 平成9年度電気学会総合研究会プラズマ研究会予稿集. 61-66 (1997)
R. Nozawa等:《ECR氢等离子体退火过程的In-Situ PM-IR-RAS观察》1997年日本电气工程师学会等离子体研究组论文集61-66(1997)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 32 条
Establishment of dynamic measurement technique of plasma induced subsurface reaction by using wavelength-tunable femtosecond fiber laser
-
批准号:15206012
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$22.13万
-
财政年份:2003
-
负责人:GOTO Toshio
-
依托单位:
Studies on selective productions of radicals using electron temperature controlled plasmas
-
批准号:11305004
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$6.6万
-
财政年份:1999
-
负责人:GOTO Toshio
-
依托单位:
Development of next generalion's large-scale functional thin film process Using UHF plasma
-
批准号:09355002
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$16.83万
-
财政年份:1997
-
负责人:GOTO Toshio
-
依托单位:
Study of elementary processes for the lower laser level of the copper vapor laser
-
批准号:05452196
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$4.42万
-
财政年份:1993
-
负责人:GOTO Toshio
-
依托单位:
STUDIES ON MEASUREMENTS OF RADICALS IN GAS PHASE USING SPECTROSCOPY TECHNIQUES
-
批准号:05237104
-
项目类别:Grant-in-Aid for Scientific Research on Priority Areas
-
资助金额:$67.84万
-
财政年份:1993
-
负责人:GOTO Toshio
-
依托单位:
Study on ShortーPulsed UV Lasers Using New Longitudinal Excitation Techniques
-
批准号:63420036
-
项目类别:Grant-in-Aid for General Scientific Research (A)
-
资助金额:$15.81万
-
财政年份:1988
-
负责人:GOTO Toshio
-
依托单位:
Developmental Study on a compact He/Ar/XeCl Excimer Laser with Automatic Preionization
-
批准号:59850063
-
项目类别:Grant-in-Aid for Developmental Scientific Research
-
资助金额:$1.98万
-
财政年份:1984
-
负责人:GOTO Toshio
-
依托单位:
海外基金