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Development of next generalion's large-scale functional thin film process Using UHF plasma

使用 UHF 等离子体开发下一代大规模功能薄膜工艺

基本信息

批准号：
09355002
负责人：
GOTO Toshio
金额：
$ 16.83万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09355002/
关键词：
Plasma CVD Thin Film UHF Radical Polycrystalline Silicon Process Large-scale アモルファスシリコン Si原子

项目摘要

In the project period from 1997 to 1999, we have developed the UHF (500MHz) plasma process technology where the polycrystalline silicon (Poly-Si) film formation on the largescale glass substrate at a low temperature for the production of next generation's liquid crystal devices and low-k film formation for ULSI. The results obtained in this study are as follows.1. We have achieved the crystallinity of 95% of poly-Si film on the insulate substrate at room temperature and 300℃. Furthermore, we have successfully controlled the intermediate layer of amorphous Si below 6nm in thickness between the poly-Si film and glass substrate. These results indicate the very useful information for realizing the thin film transistor with poly-Si.2. In order to clarify the mechanism of film formation using UHF plasma, the infrared diode laser absorption spectroscopy for various kinds of radical detection and the electron attached mass spectroscopy for the polymeric neutral species have been performed. Usi … More ng these diagnostics, we have elucidated systematically the behavior of radicals and polymeric species in fluorocarbon plasmas for the low-k film formation. Furthermore, we have established the measurement method of hydrogen atoms using vacuum ultraviolet absorption spectroscopy with microhollow cathode as a great tool to get better understanding of hydrogen atoms which play an important role in UHF-SiHィイD24ィエD2/HィイD22ィエD2 plasmas.3. Diagnostics techniques we have developed are applied for the UHF-SiHィイD24ィエD2/HィイD22ィエD2 plasmas. On the basis of measured results of radicals, we have clarified that the formation of poly-Si with high quality is determined by the balance between the enery of species incident on the film growth and the ratio of precursor species of film deposition over hydrogen atoms.Results of low temperature formation of poly-Si and diagnostics technique of radicals obtained in this study will give us a new direction to form the highly functional thin film all over the largescale substrate and eventually be greatly useful for developing the next generation's functional thin film formation. Less

在1997至1999年的项目期间，我们开发了超高频(500 MHz)等离子体工艺技术，在大尺寸玻璃基板上低温形成多晶硅(Poly-Si)薄膜，用于生产下一代液晶器件和超大规模集成电路(ULSI)的低k薄膜形成。本研究取得的研究结果如下。在室温和300℃的温度下，我们在绝缘衬底上获得了95%的多晶硅薄膜结晶度。此外，我们还成功地将多晶硅薄膜与玻璃衬底之间的非晶硅中间层厚度控制在6 nm以下。这些结果为实现多晶硅薄膜晶体管提供了非常有用的信息。为了阐明超高频等离子体成膜的机理，对各种自由基进行了红外二极管激光吸收光谱检测，并对聚合物中性物种进行了电子附着质谱分析。美国工业标准协会…在这些诊断的基础上，我们系统地阐明了氟碳等离子体中自由基和聚合物物种在低k膜形成过程中的行为。此外，为了更好地了解在超高频-SiHィイD24ィエD2/HィイD22ィエD2等离子体中起重要作用的氢原子，我们建立了以微空心阴极为工具的真空紫外吸收光谱氢原子测量方法。我们开发的诊断技术被应用于超高频-SIHィイD24ィエD2/HィイD22ィエD2等离子体。在自由基测量结果的基础上，我们阐明了高质量多晶硅的形成取决于入射到薄膜生长上的物种能量和薄膜沉积的前体物种与氢原子的比率之间的平衡。本研究获得的多晶硅的低温形成和自由基诊断技术的结果将为我们在大尺寸衬底上形成高功能薄膜提供新的方向，最终将对开发下一代功能薄膜的形成具有重要意义。较少