ATOM MAMIPULATION AND EVALUATION OF PROBING TIPS
原子操纵和探测尖端的评估
基本信息
- 批准号:05245107
- 负责人:
- 金额:$ 87.42万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research on Priority Areas
- 财政年份:1993
- 资助国家:日本
- 起止时间:1993 至 1996
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The main subjects of this research on priority areas are the clarification of tunneling mechanism of electrons tunneling utilizing various high resolution microscoppies such as field emission microscopy (FEM), field ion microscopy (FIM) and scanning tunneling microscopy (STM). The electronic states of surfaces are investigated by scanning tunneling spectroscopy (STS) and field emission electron spectroscopy (FEES). However, it has been realized that the tunneling probability between a surface atom and an apex atom of a scanning tip of STM varies with the electronic state and atomic arrangement of the apex. Accordingly, the major aim of this research division is atomic level inspection of the constituent distributions of tip apexes with an atom probe (AP) and of electronic state with FEES and STS.The mechanism of atom manipulation is also studied FIM and STM.Results of this research are listed below.(1) The FEM/FIM which can introduce imaging plates (IP) was constructed in order to investigate the tunneling probability quantitatively.(2) A scanning atom probe (SAP) was developed to mass analyze 2-dimensional specimen surfaces. The mass analysis of artificially made diamond was mass analyzed.(3) High resolution FEES was constructed and detected the atomic and lattice vibrations at the tip apex were detected at 4K.(4) The electronic states of semicondutor surfaces were controlled by depositing foreign atoms to lattice steps utilizing atom manipulation technique.(5) Tunneling characteristics of phtalocyanines was investigated examining the binding state with the substrate and measuring I-V curves.(6) Self-organized quantum dot structures formed in GaP/InP short period superlattices were investigated by STM/STS.
本研究的重点领域是利用各种高分辨率显微镜,如场发射显微镜(FEM),场离子显微镜(FEM)和扫描隧道显微镜(STM)澄清电子隧穿的隧穿机制。用扫描隧道谱(STS)和场发射电子谱(FEES)研究了表面的电子态。然而,已经认识到,STM的扫描尖端的表面原子和顶点原子之间的隧穿概率随着顶点的电子状态和原子排列而变化。因此,本研究部门的主要目标是用原子探针(AP)对针尖的成分分布进行原子水平的检查,用FEES和STS对电子状态进行原子水平的检查,并对原子操纵的机理进行了研究,主要成果如下:(1)为了定量研究隧道效应,构建了可引入成像板(IP)的有限元模型(FEM/FIM)。(2)一种扫描原子探针(SAP)被开发用于质量分析二维样品表面。对人造金刚石进行了质量分析。(3)构建了高分辨率的场发射谱仪,在4K下探测到了针尖处原子和晶格的振动。(4)利用原子操纵技术,通过在晶格台阶上沉积杂质原子来控制掺杂表面的电子态。(5)通过测定酞菁与底物的结合状态和I-V曲线,研究了酞菁配合物的电化学性质。(6)利用STM/STS研究了GaP/InP短周期超晶格中的自组织量子点结构。
项目成果
期刊论文数量(83)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
G.M.McClelland and F.Watanabe: "Field Emission Switch" Appl.Phys.Lett.67. 3200-3202 (1995)
G.M.McClelland 和 F.Watanabe:“场发射开关”Appl.Phys.Lett.67。
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0.Nishikawa: "Development of a Scanning Atom Probe" to be published in J.Vac.Sci.TechnolB. 13. (1995)
0.Nishikawa:“扫描原子探针的开发”将在 J.Vac.Sci.TechnolB 上发表。
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T.Komura, M.Yoshimura, and T.Yao: "Atomic Structure of the Steps on Si (001) Studied by Scanning Tunneling Microscopy" J.Vac.Sci.Technol. B14. 906-908 (1996)
T.Komura、M.Yoshimura 和 T.Yao:“通过扫描隧道显微镜研究 Si (001) 上台阶的原子结构”J.Vac.Sci.Technol。
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O.Nishikawa,M.Iwatsuki,S.Aoki and Y.Ishikawa: "Performance of the Trial Scanning Atom Probe -A New Approach to Evaluate the Micro Tip Apex-" J.Vac.Sci.Technol.B. 14. 2110-2113 (1996)
O.Nishikawa、M.Iwatsuki、S.Aoki 和 Y.Ishikawa:“试验扫描原子探针的性能 - 评估微尖端尖端的新方法 -”J.Vac.Sci.Technol.B。
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H.Morikawa and K.Okamoto: "Field Emission Microscope Observation of H_2-and Metal-Phthalocyanines" Jpn.J.Appl.Phys.35. 4486-4491 (1996)
H.Morikawa 和 K.Okamoto:“H_2-和金属-酞菁的场发射显微镜观察”Jpn.J.Appl.Phys.35。
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NISHIKAWA Osamu其他文献
NISHIKAWA Osamu的其他文献
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{{ truncateString('NISHIKAWA Osamu', 18)}}的其他基金
Investigation of stress field and pulverization mechanism at the fault rapture front propagating at a high speed
高速传播断层破裂前缘应力场及粉碎机制研究
- 批准号:
23654170 - 财政年份:2011
- 资助金额:
$ 87.42万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Evaluation of the residual stress on the fault plane by stick slip experiment and high resolution observation of slip plane
粘滑实验及滑移面高分辨率观测评价断层面残余应力
- 批准号:
20540442 - 财政年份:2008
- 资助金额:
$ 87.42万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Atomic Level Study of Photo-Stimulated Field Emission from Insulating Thin Layers Utilizing the Scanning Atom Probe
利用扫描原子探针进行绝缘薄层光激场发射的原子水平研究
- 批准号:
09450023 - 财政年份:1997
- 资助金额:
$ 87.42万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
TUNNELING CHARACTERISCITCS OF INDIVIDUAL SURFACE ATOMS
单个表面原子的隧道特性
- 批准号:
05245106 - 财政年份:1997
- 资助金额:
$ 87.42万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
Study on the Advancement of the Geographic Information Science (GIS) and the Organization for the GIS Education and Research
地理信息科学的发展及GIS教育与研究的组织研究
- 批准号:
06306012 - 财政年份:1994
- 资助金额:
$ 87.42万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Development of Field Emission Type Ultra-High Vacuum Gauge
场发射型超高真空计的研制
- 批准号:
02555009 - 财政年份:1990
- 资助金额:
$ 87.42万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Ultra-Fine Surface Analysis by a Combined Instrument of an STM and A-P
STM 和 A-P 组合仪器进行超精细表面分析
- 批准号:
01460211 - 财政年份:1989
- 资助金额:
$ 87.42万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Ultramicroanalysis of Conducting Polymers with Atom-Probe
用原子探针对导电聚合物进行超微量分析
- 批准号:
61460062 - 财政年份:1986
- 资助金额:
$ 87.42万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Ultra-Microscopic Analysis of Metal-Compound Semiconductor Interfaces by the Atom-Probe Mass Analyzer
利用原子探针质量分析仪对金属化合物半导体界面进行超显微分析
- 批准号:
59420038 - 财政年份:1984
- 资助金额:
$ 87.42万 - 项目类别:
Grant-in-Aid for General Scientific Research (A)