ATOM MAMIPULATION AND EVALUATION OF PROBING TIPS
ATOM MAMIPULATION AND EVALUATION OF PROBING TIPS
批准号:
05245107
负责人:
NISHIKAWA Osamu
金额:
$87.42万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1996
中文摘要
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英文摘要
The main subjects of this research on priority areas are the clarification of tunneling mechanism of electrons tunneling utilizing various high resolution microscoppies such as field emission microscopy (FEM), field ion microscopy (FIM) and scanning tunneling microscopy (STM). The electronic states of surfaces are investigated by scanning tunneling spectroscopy (STS) and field emission electron spectroscopy (FEES). However, it has been realized that the tunneling probability between a surface atom and an apex atom of a scanning tip of STM varies with the electronic state and atomic arrangement of the apex. Accordingly, the major aim of this research division is atomic level inspection of the constituent distributions of tip apexes with an atom probe (AP) and of electronic state with FEES and STS.The mechanism of atom manipulation is also studied FIM and STM.Results of this research are listed below.(1) The FEM/FIM which can introduce imaging plates (IP) was constructed in order to investigate the tunneling probability quantitatively.(2) A scanning atom probe (SAP) was developed to mass analyze 2-dimensional specimen surfaces. The mass analysis of artificially made diamond was mass analyzed.(3) High resolution FEES was constructed and detected the atomic and lattice vibrations at the tip apex were detected at 4K.(4) The electronic states of semicondutor surfaces were controlled by depositing foreign atoms to lattice steps utilizing atom manipulation technique.(5) Tunneling characteristics of phtalocyanines was investigated examining the binding state with the substrate and measuring I-V curves.(6) Self-organized quantum dot structures formed in GaP/InP short period superlattices were investigated by STM/STS.
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G.M.McClelland and F.Watanabe: "Field Emission Switch" Appl.Phys.Lett.67. 3200-3202 (1995)
G.M.McClelland 和 F.Watanabe:“场发射开关”Appl.Phys.Lett.67。
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0.Nishikawa: "Development of a Scanning Atom Probe" to be published in J.Vac.Sci.TechnolB. 13. (1995)
0.Nishikawa:“扫描原子探针的开发”将在 J.Vac.Sci.TechnolB 上发表。
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T.Komura, M.Yoshimura, and T.Yao: "Atomic Structure of the Steps on Si (001) Studied by Scanning Tunneling Microscopy" J.Vac.Sci.Technol. B14. 906-908 (1996)
T.Komura、M.Yoshimura 和 T.Yao:“通过扫描隧道显微镜研究 Si (001) 上台阶的原子结构”J.Vac.Sci.Technol。
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O.Nishikawa,M.Iwatsuki,S.Aoki and Y.Ishikawa: "Performance of the Trial Scanning Atom Probe -A New Approach to Evaluate the Micro Tip Apex-" J.Vac.Sci.Technol.B. 14. 2110-2113 (1996)
O.Nishikawa、M.Iwatsuki、S.Aoki 和 Y.Ishikawa:“试验扫描原子探针的性能 - 评估微尖端尖端的新方法 -”J.Vac.Sci.Technol.B。
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H.Morikawa and K.Okamoto: "Field Emission Microscope Observation of H_2-and Metal-Phthalocyanines" Jpn.J.Appl.Phys.35. 4486-4491 (1996)
H.Morikawa 和 K.Okamoto:“H_2-和金属-酞菁的场发射显微镜观察”Jpn.J.Appl.Phys.35。
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共 37 条
Investigation of stress field and pulverization mechanism at the fault rapture front propagating at a high speed
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批准号:23654170
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.33万
-
财政年份:2011
-
负责人:NISHIKAWA Osamu
-
依托单位:
Evaluation of the residual stress on the fault plane by stick slip experiment and high resolution observation of slip plane
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批准号:20540442
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.83万
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财政年份:2008
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负责人:NISHIKAWA Osamu
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依托单位:
Atomic Level Study of Photo-Stimulated Field Emission from Insulating Thin Layers Utilizing the Scanning Atom Probe
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批准号:09450023
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.58万
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财政年份:1997
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负责人:NISHIKAWA Osamu
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依托单位:
TUNNELING CHARACTERISCITCS OF INDIVIDUAL SURFACE ATOMS
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批准号:05245106
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$10.88万
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财政年份:1997
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负责人:NISHIKAWA Osamu
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依托单位:
Study on the Advancement of the Geographic Information Science (GIS) and the Organization for the GIS Education and Research
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批准号:06306012
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$0.0万
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财政年份:1994
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负责人:NISHIKAWA Osamu
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依托单位:
Development of Field Emission Type Ultra-High Vacuum Gauge
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批准号:02555009
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$6.85万
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财政年份:1990
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负责人:NISHIKAWA Osamu
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依托单位:
Ultra-Fine Surface Analysis by a Combined Instrument of an STM and A-P
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批准号:01460211
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.61万
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财政年份:1989
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负责人:NISHIKAWA Osamu
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依托单位:
Ultramicroanalysis of Conducting Polymers with Atom-Probe
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批准号:61460062
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.54万
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财政年份:1986
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负责人:NISHIKAWA Osamu
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依托单位:
Ultra-Microscopic Analysis of Metal-Compound Semiconductor Interfaces by the Atom-Probe Mass Analyzer
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批准号:59420038
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$12.16万
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财政年份:1984
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负责人:NISHIKAWA Osamu
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依托单位: