Development of Field Emission Type Ultra-High Vacuum Gauge
Development of Field Emission Type Ultra-High Vacuum Gauge
批准号:
02555009
负责人:
NISHIKAWA Osamu
金额:
$6.85万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991
中文摘要
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英文摘要
Field emission is the electron tunneling through the potential barrier lowered by the high electric field - 0.5V/A. The tunneling rate for the electrons confined in the surface varies sensitively with the adsorption of gas atoms and molecules. In this study the high field required for the field emission was realized by employing a hemispherical apex of a sharp tip of a field emission microscope (FIM) and by applying a high negative voltage. The vacuum was measured by observing the reduction rate of field emission current with time.The study aimed the following items : (1) Improvement of the existing vacuum system up to the vacuum of 10^<-11> - 10^<-13> Torr, (2) Clarification of the relation between the reduction rate of emission current and vacuum, (3) Examination of various metals as tip materials, (4) Evaluation of the advantageous point of multiple tips, (5) Development of a new highly efficient and reliable system to measure emission currents.The results of above items are as follows : (1) The vacuum better than 10^<-11> Torr could not be obtained possibly due to the insufficient surface refinish of the vacuum chamber, (2) It was found that the reduction rate of emission current is fairly well proportional to vacuum, (3) The study indicates that a W tip is more sensitive than an Ir tip for vacuum measurement because the W surface is more active than the Ir surface, (4) No multiple tip was examined because the study of item (5) must be preceded, (5) In order to measure the emission current efficiently and precisely, a 2-dimensional imaging Faraday cage was developed. Since the screen of the imaging cage projects the image of the currents emitted from every apex of the multiple tip, it allows us to examine all the tips directly at a single glance.
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O. Nishikawa, M. Tomitori, F. Iwawaki and N. Hirano: "Correlation Between Scanning Tunneling Microscopy/Spectroscopy Images and Apex Profiles of Scanning Tips" J. Vac. Sci. Technol. A. 8. 421 (1990)
O. Nishikawa、M. Tomitori、F. Iwawaki 和 N. Hirano:“扫描隧道显微镜/光谱图像与扫描尖端顶点轮廓之间的相关性”J. Vac。
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通讯作者:
O.Nishikawa,M.Tomitori,F.Iwawaki and N.Hirano: "Correlation Between Scanning Tunneling Microscopy/Spectroscopy Images and Apex Profiles of Scanning Tips" J.Vac.Sci.Technol.A. 8. 421-424 (1990)
O.Nishikawa、M.Tomitori、F.Iwawaki 和 N.Hirano:“扫描隧道显微镜/光谱图像与扫描尖端顶点轮廓之间的相关性”J.Vac.Sci.Technol.A。
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O.Nishikawa,M.Tomitori and F.Iwawaki: "Atomic Configuration of Tip Apexes and Scanning Tunneling Microscopy-Spectroscopy" Materials Science and Engineering. B8. 81-97 (1991)
O.Nishikawa、M.Tomitori 和 F.Iwawaki:“尖端顶点的原子构型和扫描隧道显微镜-光谱”材料科学与工程。
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F. Iwawaki, M. Tomitori and O. Nishikawa: "STM/STS observation of Step Structures of Si (001) and (111) Surfaces" J. Vac. Sci. Technol. B. 9. 711 (1991)
F. Iwawaki、M. Tomitori 和 O. Nishikawa:“Si (001) 和 (111) 表面阶梯结构的 STM/STS 观察”J. Vac。
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通讯作者:
O.Nishikawa,M.Tomitori and F.Iwawaki: "Atomic Configurations of Tip Apexes and Scanning Tunneling Microscopy/Spectroscopy" Materials Sci.Engineering.
O.Nishikawa、M.Tomitori 和 F.Iwawaki:“尖端顶点的原子构型和扫描隧道显微镜/光谱学”材料科学工程。
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共 26 条
Investigation of stress field and pulverization mechanism at the fault rapture front propagating at a high speed
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Evaluation of the residual stress on the fault plane by stick slip experiment and high resolution observation of slip plane
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财政年份:2008
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依托单位:
Atomic Level Study of Photo-Stimulated Field Emission from Insulating Thin Layers Utilizing the Scanning Atom Probe
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财政年份:1997
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负责人:NISHIKAWA Osamu
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依托单位:
TUNNELING CHARACTERISCITCS OF INDIVIDUAL SURFACE ATOMS
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批准号:05245106
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$10.88万
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财政年份:1997
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负责人:NISHIKAWA Osamu
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依托单位:
Study on the Advancement of the Geographic Information Science (GIS) and the Organization for the GIS Education and Research
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批准号:06306012
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资助金额:$0.0万
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财政年份:1994
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ATOM MAMIPULATION AND EVALUATION OF PROBING TIPS
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财政年份:1993
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负责人:NISHIKAWA Osamu
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依托单位:
Ultra-Fine Surface Analysis by a Combined Instrument of an STM and A-P
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财政年份:1989
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负责人:NISHIKAWA Osamu
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依托单位:
Ultramicroanalysis of Conducting Polymers with Atom-Probe
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财政年份:1986
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负责人:NISHIKAWA Osamu
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依托单位:
Ultra-Microscopic Analysis of Metal-Compound Semiconductor Interfaces by the Atom-Probe Mass Analyzer
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批准号:59420038
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$12.16万
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财政年份:1984
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负责人:NISHIKAWA Osamu
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依托单位:
海外基金