Atomic Level Study of Photo-Stimulated Field Emission from Insulating Thin Layers Utilizing the Scanning Atom Probe

光对绝缘体和半绝缘体的辐射对光刺激场发射的负偏压电压指数的辐射。受刺激的现场电离和现场蒸发也是可见的。在本研究中，对诸如CVD和HPHT钻石、99.8和99.99%纯度图、游离碳、碳纳米管（CNT）、硅微芯片、硅金字塔和硅颗粒等低导电材料的表面组成之间的相关性进行了研究，以利用扫描原子探针（SAP）的独特能力。一个摄影刺激的现场蒸发是通过应用脉冲的电压和脉冲的YAG激光束观察到的。该研究揭示了钻石含有一个大的氢依赖于生长过程的数量。许多碳簇都是从所有碳粒子中检测到的，特别地形成了99.99%的纯图形。硅微芯片是由HF酸严重腐蚀的。碳、氧和氢分歧进入尖端。In order to study the photo-stimulated field emission a SiO-D22-D2 layer is deposited covering a transparent conductive layer on a glass plate. However， no photo-stimulated field emission Could be Observed possibly due to defects in the SiO-D-D-2 layer where leak current flows。F-N的斜率和干扰被画出来了。绘制的图表表明，CNT的工作功能在分析的标本中是最低的。当碳纳米管的工作功能是由氢吸收引起的，即硅分解。一个新的SAP，一个位置敏感的离子探测器，在开发下展示了原子分辨率中的3D分布。

Irradiation of light to insulators and semi-insulators at a negative bias voltage induces photo-stimulated field emission. Photo-stimulated field ionization and field evaporation are also observed. In this study the correlation between the field emission characteristics and the surface composition of low conductive materials such as CVD and HPHT diamonds, 99.8 and 99.99% purity graphites, vitreous carbon, carbon nano-tubes (CNT), silicon micro-tips, silicon pyramid, silicon grains is investigated utilizing the unique capability of the scanning atom probe(SAP). The photo-stimulated field evaporation was observed by applying pulsed voltage and pulsed YAG laser beam to the specimens. The study revealed that the diamonds contain a large amount of hydrogen depending on the growth process. Many carbon clusters are detected from all carbon specimens, especially form the 99.99% pure graphite. Silicon micro-tips are highly corroded by HF acid. Carbon, oxygen and hydrogen diffuse into the tips. In order to study the photo-stimulated field emission a SiOィイD22ィエD2 layer is deposited covering a transparent conductive layer on a glass plate. However, no photo-stimulated field emission could be observed possibly due to defects in the SiOィイD22ィエD2 layer where leak current flows. Slope and intercept of the F-N plot are plotted. The plotted chart indicates that the work function of the CNT is the lowest among the analyzed specimens. While the work function of the CNT increases by hydrogen adsorption, that of silicon decreases. A new SAP with a position sensitive ion detector is under development to exhibit the 3D-distribution of compositions at an atomic resolution.