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Atomic Level Study of Photo-Stimulated Field Emission from Insulating Thin Layers Utilizing the Scanning Atom Probe

Atomic Level Study of Photo-Stimulated Field Emission from Insulating Thin Layers Utilizing the Scanning Atom Probe
利用扫描原子探针进行绝缘薄层光激场发射的原子水平研究
批准号:
09450023
负责人:
NISHIKAWA Osamu
金额:
$8.58万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1999

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NISHIKAWA Osamu的其他基金

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中文摘要
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英文摘要
Irradiation of light to insulators and semi-insulators at a negative bias voltage induces photo-stimulated field emission. Photo-stimulated field ionization and field evaporation are also observed. In this study the correlation between the field emission characteristics and the surface composition of low conductive materials such as CVD and HPHT diamonds, 99.8 and 99.99% purity graphites, vitreous carbon, carbon nano-tubes (CNT), silicon micro-tips, silicon pyramid, silicon grains is investigated utilizing the unique capability of the scanning atom probe(SAP). The photo-stimulated field evaporation was observed by applying pulsed voltage and pulsed YAG laser beam to the specimens. The study revealed that the diamonds contain a large amount of hydrogen depending on the growth process. Many carbon clusters are detected from all carbon specimens, especially form the 99.99% pure graphite. Silicon micro-tips are highly corroded by HF acid. Carbon, oxygen and hydrogen diffuse into the tips. In order to study the photo-stimulated field emission a SiOィイD22ィエD2 layer is deposited covering a transparent conductive layer on a glass plate. However, no photo-stimulated field emission could be observed possibly due to defects in the SiOィイD22ィエD2 layer where leak current flows. Slope and intercept of the F-N plot are plotted. The plotted chart indicates that the work function of the CNT is the lowest among the analyzed specimens. While the work function of the CNT increases by hydrogen adsorption, that of silicon decreases. A new SAP with a position sensitive ion detector is under development to exhibit the 3D-distribution of compositions at an atomic resolution.
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DOI: --
发表时间:
期刊:
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作者: []
通讯作者:
O. Nishikawa et al: "Atomic Level Analysis of Electron Emitter Surfaces by the Scanning Atom Probe"Appl. Phys. A. 146. 398-407 (1999)
O. Nishikawa 等人:“通过扫描原子探针对电子发射器表面进行原子级分析”Appl。
DOI: --
发表时间:
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作者: []
通讯作者:
O.Nishikawa et al.: "Atom-by-Atom Analysis of Diamond,Graphite and Vitreous Carbon by Scanning Atom Probe"J.Vac.Sci.Technol.B. 18(印刷中). (2000)
O. Nishikawa 等人:“通过扫描原子探针对金刚石、石墨和玻璃碳进行原子分析”J.Vac.Sci.Technol.B 18(出版中)。
DOI: --
发表时间:
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作者: []
通讯作者:
Osamu Nishikawa et al: "Atomic Investigation of Individual Apexes of Diamond Emitters by a Scanning Atom Probe"J. Vac. Sci. Technol. B. 16. 836-840 (1998)
Osamu Nishikawa 等人:“通过扫描原子探针对金刚石发射体的各个顶点进行原子研究”J。
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通讯作者:
27
    Investigation of stress field and pulverization mechanism at the fault rapture front propagating at a high speed
    • 批准号:
      23654170
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.33万
    • 财政年份:
      2011
    • 负责人:
      NISHIKAWA Osamu
    • 依托单位:
    Evaluation of the residual stress on the fault plane by stick slip experiment and high resolution observation of slip plane
    • 批准号:
      20540442
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.83万
    • 财政年份:
      2008
    • 负责人:
      NISHIKAWA Osamu
    • 依托单位:
    TUNNELING CHARACTERISCITCS OF INDIVIDUAL SURFACE ATOMS
    • 批准号:
      05245106
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $10.88万
    • 财政年份:
      1997
    • 负责人:
      NISHIKAWA Osamu
    • 依托单位:
    Study on the Advancement of the Geographic Information Science (GIS) and the Organization for the GIS Education and Research