Atomic Level Study of Photo-Stimulated Field Emission from Insulating Thin Layers Utilizing the Scanning Atom Probe

利用扫描原子探针进行绝缘薄层光激场发射的原子水平研究

• 批准号: 09450023
• 负责人: NISHIKAWA Osamu
• 金额: $ 8.58万
• 依托单位: Kanazawa Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450023/
• 关键词: Scanning Atom Probe (SAP); F-N plot; Photo-Stimulated Field Emission; Carbon Nano-Tubes; Carbon Clusters; CVD & HPHT Diamonds; Silicon; Graphite; CVDダイヤモンド; HPHTダイヤモンド; ガラス状炭素; 走査型アトムプローブ; 電子のトンネル; 電界蒸発; 電界放射; ダイヤモンド; マススペクトル

Irradiation of light to insulators and semi-insulators at a negative bias voltage induces photo-stimulated field emission. Photo-stimulated field ionization and field evaporation are also observed. In this study the correlation between the field emission characteristics and the surface composition of low conductive materials such as CVD and HPHT diamonds, 99.8 and 99.99% purity graphites, vitreous carbon, carbon nano-tubes (CNT), silicon micro-tips, silicon pyramid, silicon grains is investigated utilizing the unique capability of the scanning atom probe(SAP). The photo-stimulated field evaporation was observed by applying pulsed voltage and pulsed YAG laser beam to the specimens. The study revealed that the diamonds contain a large amount of hydrogen depending on the growth process. Many carbon clusters are detected from all carbon specimens, especially form the 99.99% pure graphite. Silicon micro-tips are highly corroded by HF acid. Carbon, oxygen and hydrogen diffuse into the tips. In order to study the photo-stimulated field emission a SiOィイD22ィエD2 layer is deposited covering a transparent conductive layer on a glass plate. However, no photo-stimulated field emission could be observed possibly due to defects in the SiOィイD22ィエD2 layer where leak current flows. Slope and intercept of the F-N plot are plotted. The plotted chart indicates that the work function of the CNT is the lowest among the analyzed specimens. While the work function of the CNT increases by hydrogen adsorption, that of silicon decreases. A new SAP with a position sensitive ion detector is under development to exhibit the 3D-distribution of compositions at an atomic resolution.

在负偏压下，光对绝缘体和半绝缘体的照射引起光激励场发射。还观察到光激场电离和场蒸发。在这项研究中，场发射特性和低导电材料，如CVD和HPHT金刚石，99.8%和99.99%纯度的石墨，玻璃碳，碳纳米管（CNT），硅微尖，硅金字塔，硅晶粒的表面组成之间的相关性进行了研究，利用扫描原子探针（SAP）的独特功能。通过对样品施加脉冲电压和脉冲YAG激光束，观察到了光激场蒸发。研究表明，钻石含有大量的氢，这取决于生长过程。在所有的碳样品中都检测到了大量的碳团簇，尤其是在99.99%纯石墨样品中。硅微尖被HF酸严重腐蚀。碳、氧和氢扩散到尖端。为了研究光激励场发射，在玻璃板上沉积了一层覆盖在透明导电层上的SiO_2D_2D_2D_2层。然而，可能由于漏电流流动的SiO_xD_22_xD_2层中的缺陷，没有观察到光激励场发射。绘制F-N图的斜率和截距。绘制的图表表明，CNT的功函数在分析的样品中是最低的。虽然CNT的功函数通过氢吸附而增加，但硅的功函数降低。正在开发一种带有位置敏感离子检测器的新SAP，以原子分辨率显示组合物的3D分布。

项目成果

O.Nishikawa, K.Maeda, Y.Ohtani, M.Watanabe, K.Tanaka, T.Sekine, M.Iwatsuki, S.Aoki, J.Itoh and K.Yamanaka: "Atomic Level Analysis of Electron Emitter Surfaces by the Scanning Atom Probe"Appl.Surf.Sci.. 146. 398-407 (1999)

O.Nishikawa、K.Maeda、Y.Ohtani、M.Watanabe、K.Tanaka、T.Sekine、M.Iwatsuki、S.Aoki、J.Itoh 和 K.Yamanaka：“通过

O. Nishikawa et al: "Atomic Level Analysis of Electron Emitter Surfaces by the Scanning Atom Probe"Appl. Phys. A. 146. 398-407 (1999)

O. Nishikawa 等人：“通过扫描原子探针对电子发射器表面进行原子级分析”Appl。

O.Nishikawa et al.: "Atom-by-Atom Analysis of Diamond,Graphite and Vitreous Carbon by Scanning Atom Probe"J.Vac.Sci.Technol.B. 18(印刷中). (2000)

O. Nishikawa 等人：“通过扫描原子探针对金刚石、石墨和玻璃碳进行原子分析”J.Vac.Sci.Technol.B 18（出版中）。

Osamu Nishikawa et al: "Atomic Investigation of Individual Apexes of Diamond Emitters by a Scanning Atom Probe"J. Vac. Sci. Technol. B. 16. 836-840 (1998)

Osamu Nishikawa 等人：“通过扫描原子探针对金刚石发射体的各个顶点进行原子研究”J。

O.Nishikawa, Y.Ohtani, K.Maeda, M.Watanabe and K.Tanaka: "Atom-by-Atom Analysis of Diamond, Graphite and Vitreous Carbon by Scanning Atom Probe"J.Vac.Sci.Technol.B. 18, Mar/Apr, in press. (2000)

O.Nishikawa、Y.Ohtani、K.Maeda、M.Watanabe 和 K.Tanaka：“通过扫描原子探针对金刚石、石墨和玻璃碳进行原子对原子分析”J.Vac.Sci.Technol.B。