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Synchrotron Radiation Imaging Observation with Extremely Small Exit Angle for Lattice Mismatched Semiconductor Epitaxial

晶格失配半导体外延极小出射角同步辐射成像观测

基本信息

批准号：
16560010
负责人：
SUZUKI Yoshifumi
金额：
$ 2.24万
依托单位：
Kyushu Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560010/
关键词：
Synchrotron Lattice Mismatched Semiconductor Epitaxial Film Surface and Interface Extremely Small Incident Angle Imaging Critical angle X-ray Diffraction

项目摘要

We develop X-ray scattering topography system, which is capable for observing a semiconductor epitaxial layer with sub-micron laterally spatial resolution using synchrotron radiation. The scattering topography system proposed by us with sub-micron laterally spatial resolution have a main component of a straight micro pinhole device. We have demonstrated observation for dislocations in Si, Ge, GaAs etc. bulk samples, and obtained valuable information which has never gotten by other characterization method. We had never reached better observation for epitaxial film than bulk one. We are going to try characterization of X-ray diffraction optical geometry at around critical angle with controlling of X-ray penetration depth.Silicon wafer specimens with different surface nanotopography patterns, as measured by optical measurements, and different boron concentrations, were characterized by a grazing incident diffraction (GID) topography and total reflection imaging method near the critical an … More gle using plane-waves. We used plane-waves produced by the high-resolution diffraction topography station located at the medium-length (200 m) bending-magnet beam line at BL20B2 of SPring-8. The GID topographs and total reflection images gave qualitative and detailed information on the dependence of surface roughness on boron doping concentration. Moreover, grazing incident X-ray diffraction is based on the new technique called in-plane diffraction measurement. GaN epitaxial layer grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrate. Using the in-plane diffraction measurement, we could obtain significant information concerning to GaN growth mechanism. The hexagonal (wurtzite) phase often co-exists with cubic (zinc blende) one for two-polymorphs (wurtzite and zinc-blend structures). Incident angle dependence of GaN epitaxial layer for in plane 2θ_χ/φ-scannning diffraction intensity (a) zincblende-GaN, (b) wurtzite-GaN, critical angle ω_c is 0.206° for CuKα_1. While the lattice spacing for GaN_<zinc blende> || have a dependence of depth, that for GaN_<wurtzite> crystal have no depth dependence. Less

研制了一套X射线散射形貌术系统，该系统能够利用同步辐射对半导体外延层进行亚微米横向空间分辨率的观测。我们提出的具有亚微米横向空间分辨率的散射形貌测量系统，其主要部件是一个直的微针孔装置。我们对Si、Ge、GaAs等体样品中的位错进行了观测，获得了其它表征方法从未得到过的有价值的信息。我们从来没有达到更好的观察外延膜比体一。利用掠入射衍射（GID）形貌和全反射成像方法，对不同硼浓度和不同表面形貌的硅片样品进行了X射线穿透深度控制下的临界角附近的衍射光学几何表征，并对不同硼浓度和不同表面形貌的硅片样品进行了X射线穿透深度控制下的临界角附近的衍射光学几何表征。 ...更多信息利用平面波的几何学我们使用的平面波的高分辨率衍射地形站位于中等长度（200米）弯曲磁铁束线在BL 20 B2的SPring-8。的GID拓扑图和全反射图像给出了定性和详细的信息硼掺杂浓度的表面粗糙度的依赖关系。此外，掠入射X射线衍射是基于称为面内衍射测量的新技术。GaAs（001）衬底上等离子体辅助分子束外延生长GaN外延层。利用面内衍射测量，我们可以获得有关GaN生长机制的重要信息。六方（纤锌矿）相通常与立方（锌）相共存，用于两种多晶型物（纤锌矿和锌混合物结构）。GaN外延层的2θ x/φ面内扫描衍射强度随入射角的变化关系（a）Znblined-GaN，（B）Wurtzite-GaN，CuKα_1的临界角ω c为0.206°。而GaN的晶格间距<zinc blende>||具有深度依赖性，而GaN_<wurtzite>2晶体则不具有深度依赖性。少