Lattice-Mismatched Liquid Phase Epitaxy

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For decades researchers were limited to designing devices that were lattice-matched to a commercially available substrate; more recently, however, researchers have learned how to design around some lattice mismatch. This work has resulted in state-of-the-art, strained-Si transistors, efficient (world-record breaking) solar cells, and nobel-prize-winning LEDs. In this research program, the PI will develop advanced Liquid Phase Epitaxy (LPE is the least expensive way to grow high-quality semiconductors.) techniques to support and enable advanced semiconductor devices. Having worked in high-quality materials integration for 17 years, the PI has demonstrated the fundamental aspects of this proposal to grow high-quality Ge on Si, which will build a sturdy foundation for third-generation photovoltaics and other state-of-the-art devices. He now wants to demonstrate these techniques using LPE. The 4 Ph.D. students and 10 undergraduate students assigned to this program will gain valuable and broad experience in semiconductor materials growth, device fabrcation as well as materials and device characterization. The technology described in this proposal can be applied to a myriad of devices including large area electronics (like solar cells or displays), computer processors, and telecommunications. This work is expected to revitalize the field of LPE by bringing advanced techniques and reduce the cost for state-of-the-art devices.