Lattice-Mismatched Liquid Phase Epitaxy
晶格失配液相外延
基本信息
- 批准号:RGPIN-2015-03718
- 负责人:
- 金额:$ 1.6万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Discovery Grants Program - Individual
- 财政年份:2019
- 资助国家:加拿大
- 起止时间:2019-01-01 至 2020-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
For decades researchers were limited to designing devices that were lattice-matched to a commercially available substrate; more recently, however, researchers have learned how to design around some lattice mismatch. This work has resulted in state-of-the-art, strained-Si transistors, efficient (world-record breaking) solar cells, and nobel-prize-winning LEDs. In this research program, the PI will develop advanced Liquid Phase Epitaxy (LPE is the least expensive way to grow high-quality semiconductors.) techniques to support and enable advanced semiconductor devices. Having worked in high-quality materials integration for 17 years, the PI has demonstrated the fundamental aspects of this proposal to grow high-quality Ge on Si, which will build a sturdy foundation for third-generation photovoltaics and other state-of-the-art devices. He now wants to demonstrate these techniques using LPE. The 4 Ph.D. students and 10 undergraduate students assigned to this program will gain valuable and broad experience in semiconductor materials growth, device fabrcation as well as materials and device characterization. The technology described in this proposal can be applied to a myriad of devices including large area electronics (like solar cells or displays), computer processors, and telecommunications. This work is expected to revitalize the field of LPE by bringing advanced techniques and reduce the cost for state-of-the-art devices.
几十年来,研究人员一直局限于设计与商业基板晶格匹配的器件;然而,最近,研究人员已经学会了如何围绕一些晶格失配进行设计。这项工作已经导致了最先进的应变硅晶体管、高效(打破世界纪录的)太阳能电池和诺贝尔奖获得者LED。在这项研究计划中,PI将开发先进的液态外延(LPE是生长高质量半导体的最便宜的方法)。支持和启用先进半导体器件的技术。PI在高质量材料集成领域工作了17年,已经展示了在硅上生长高质量Ge的建议的基本方面,这将为第三代光伏和其他最先进的设备奠定坚实的基础。他现在想用LPE演示这些技术。该项目的4名博士生和10名本科生将在半导体材料生长、器件制造以及材料和器件表征方面获得宝贵和广泛的经验。这项提案中描述的技术可以应用于无数设备,包括大面积电子设备(如太阳能电池或显示器)、计算机处理器和电信。这项工作有望通过带来先进的技术来振兴LPE领域,并降低最先进设备的成本。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Quitoriano, Nathaniel其他文献
Quitoriano, Nathaniel的其他文献
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{{ truncateString('Quitoriano, Nathaniel', 18)}}的其他基金
2D- and Nano-materials techniques for semiconductor integration
用于半导体集成的 2D 和纳米材料技术
- 批准号:
RGPIN-2020-04747 - 财政年份:2022
- 资助金额:
$ 1.6万 - 项目类别:
Discovery Grants Program - Individual
2D- and Nano-materials techniques for semiconductor integration
用于半导体集成的 2D 和纳米材料技术
- 批准号:
RGPIN-2020-04747 - 财政年份:2021
- 资助金额:
$ 1.6万 - 项目类别:
Discovery Grants Program - Individual
2D- and Nano-materials techniques for semiconductor integration
用于半导体集成的 2D 和纳米材料技术
- 批准号:
RGPIN-2020-04747 - 财政年份:2020
- 资助金额:
$ 1.6万 - 项目类别:
Discovery Grants Program - Individual
Lattice-Mismatched Liquid Phase Epitaxy
晶格失配液相外延
- 批准号:
RGPIN-2015-03718 - 财政年份:2018
- 资助金额:
$ 1.6万 - 项目类别:
Discovery Grants Program - Individual
Lattice-Mismatched Liquid Phase Epitaxy
晶格失配液相外延
- 批准号:
RGPIN-2015-03718 - 财政年份:2017
- 资助金额:
$ 1.6万 - 项目类别:
Discovery Grants Program - Individual
Lattice-Mismatched Liquid Phase Epitaxy
晶格失配液相外延
- 批准号:
RGPIN-2015-03718 - 财政年份:2016
- 资助金额:
$ 1.6万 - 项目类别:
Discovery Grants Program - Individual
Lattice-Mismatched Liquid Phase Epitaxy
晶格失配液相外延
- 批准号:
RGPIN-2015-03718 - 财政年份:2015
- 资助金额:
$ 1.6万 - 项目类别:
Discovery Grants Program - Individual
Fabrication and characterization of a new inverse constant-loss taper (CLT)
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484683-2015 - 财政年份:2015
- 资助金额:
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Inexpensive, high-efficiency solar cells
廉价、高效的太阳能电池
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$ 1.6万 - 项目类别:
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The direct growth of high-quality semiconductors
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386199-2010 - 财政年份:2014
- 资助金额:
$ 1.6万 - 项目类别:
Discovery Grants Program - Individual
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