Fabrication and characterization of small magnetic tunnel junction by atomic force microscope for observation of Coulomb blockade
用原子力显微镜观察库仑阻塞的小型磁隧道结的制作和表征
基本信息
- 批准号:16560269
- 负责人:
- 金额:$ 2.05万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2004
- 资助国家:日本
- 起止时间:2004 至 2006
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Well-defined nanostructures of oxide can be fabricated on metal thin films by applying a negative bias on a conductive atomic force microscopy (AFM) cantilever. With using this technique, planar-type magnetic tunnel junctions have been fabricated. The junction area of this structure can be much smaller than that of a conventional multilayer-type junction. This is advantageous for fabrication of single electron devices exhibiting Coulomb blockade. Ni thin film of 8-20 nm were deposited on SiO2/Si substrates by rf magnetron sputtering. The films were patterned to stripe shapes by photolithography and dry etching. Then nanowires of oxide were fabricated by the AFM nano-oxidation technique, and planar-type magnetic tunnel junctions were successfully obtained.A diode characteristic was observed in current-voltage measurement at the temperature range of 17-300K. It was found that the fabricated nanowires of oxide could be a tunnel barrier. Formally the width of the barrier was thick but the AFM nano-oxidation using tapping mode of the AFM operation realized a thinner width. The barrier height of 1.5 eV and barrier width of 1.7 nm were derived from a calculation using the Simmons formula fitting. There results are promising for ferromagnetic single electron transistors exhibiting Coulomb blockade.
通过在导电的原子力显微镜(AFM)悬臂梁上施加负偏压,可以在金属薄膜上制备出轮廓分明的氧化物纳米结构。用这种技术,平面型磁性隧道结已被制造。这种结构的结面积可以比传统的多层型结的结面积小得多。这对于制造表现出库仑阻塞的单电子器件是有利的。采用射频磁控溅射法在SiO2/Si衬底上沉积了8-20 nm的Ni薄膜。通过光刻和干法蚀刻将膜图案化为条纹形状。利用AFM纳米氧化技术制备了氧化物纳米线,并成功制备了平面型磁性隧道结,在17- 300 K温度范围内的电流-电压测量中观察到了二极管特性。研究发现,所制备的氧化物纳米线可以作为隧道势垒。在形式上,屏障的宽度是厚的,但是使用AFM操作的轻敲模式的AFM纳米氧化实现了更薄的宽度。1.5eV的势垒高度和1.7nm的势垒宽度由使用Simmons公式拟合的计算得出。这些结果是有前途的铁磁单电子晶体管表现出库仑阻塞。
项目成果
期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Direct Modification of Magnetic Domains in Co Nanostructures by AFM-Lithography
通过 AFM 光刻直接修饰 Co 纳米结构中的磁畴
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:Yasushi Takemura
- 通讯作者:Yasushi Takemura
Modification of Electrical Properties and Magnetic Domain Structures in Magnetic Nanostructures by AFM Nano-lithography
通过 AFM 纳米光刻对磁性纳米结构中的电性能和磁畴结构进行改性
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:T.Tsuda;T.Fukami;Y.Kanamaru;T.Miyamoto;Yasushi Takemura
- 通讯作者:Yasushi Takemura
Direct Modification of Magnetic Domains in Co Nanostructures by AFM -Lithography
通过 AFM 光刻直接修饰 Co 纳米结构中的磁畴
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:Yoko Amano;Satoshi Ogasawara;Yasushi Takemura
- 通讯作者:Yasushi Takemura
Magnetoresistance of NiFe wires with modified structures by AFM nano-lithography
AFM 纳米光刻改性结构 NiFe 线的磁阻
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:山本 玲緒奈;天野耀鴻;Genta Watanabe
- 通讯作者:Genta Watanabe
AFM Lithography for Magnetic Nanostructures and Devices
用于磁性纳米结构和器件的 AFM 光刻
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Shinya Terada;Ichirou Oota;Kei Eguchi;Fumio Ueno;Yoko Amano;Yasushi Takemura
- 通讯作者:Yasushi Takemura
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TAKEMURA Yasushi其他文献
TAKEMURA Yasushi的其他文献
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$ 2.05万 - 项目类别:
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Evaluation method for analysis of heating mechanism of intercellular magnetic nanoparticles
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26289124 - 财政年份:2014
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Design and fabrication of hyperthermia implants with self-control function of heating temperature and resonant frequency
具有加热温度和共振频率自控功能的热疗植入体的设计与制作
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24656226 - 财政年份:2012
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$ 2.05万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Study on evaluation methods of heating mechanism and distribution in cultured cell of magnetic nanoparticles
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- 批准号:
23360179 - 财政年份:2011
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$ 2.05万 - 项目类别:
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Design and fabrication of resonant circuit for hyperthermia excited by magnetic resonance imaging(MRI)
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21656092 - 财政年份:2009
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$ 2.05万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Fabrication of planar magnetic nanostructures and control of their magnetization
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19360140 - 财政年份:2007
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$ 2.05万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Magneto-transport property of FeSe thin films prepared by selenization technique
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- 批准号:
11650318 - 财政年份:1999
- 资助金额:
$ 2.05万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
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