Fabrication and characterization of small magnetic tunnel junction by atomic force microscope for observation of Coulomb blockade

用原子力显微镜观察库仑阻塞的小型磁隧道结的制作和表征

基本信息

  • 批准号:
    16560269
  • 负责人:
  • 金额:
    $ 2.05万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    2004
  • 资助国家:
    日本
  • 起止时间:
    2004 至 2006
  • 项目状态:
    已结题

项目摘要

Well-defined nanostructures of oxide can be fabricated on metal thin films by applying a negative bias on a conductive atomic force microscopy (AFM) cantilever. With using this technique, planar-type magnetic tunnel junctions have been fabricated. The junction area of this structure can be much smaller than that of a conventional multilayer-type junction. This is advantageous for fabrication of single electron devices exhibiting Coulomb blockade. Ni thin film of 8-20 nm were deposited on SiO2/Si substrates by rf magnetron sputtering. The films were patterned to stripe shapes by photolithography and dry etching. Then nanowires of oxide were fabricated by the AFM nano-oxidation technique, and planar-type magnetic tunnel junctions were successfully obtained.A diode characteristic was observed in current-voltage measurement at the temperature range of 17-300K. It was found that the fabricated nanowires of oxide could be a tunnel barrier. Formally the width of the barrier was thick but the AFM nano-oxidation using tapping mode of the AFM operation realized a thinner width. The barrier height of 1.5 eV and barrier width of 1.7 nm were derived from a calculation using the Simmons formula fitting. There results are promising for ferromagnetic single electron transistors exhibiting Coulomb blockade.
通过在导电的原子力显微镜(AFM)悬臂梁上施加负偏压,可以在金属薄膜上制备出轮廓分明的氧化物纳米结构。用这种技术,平面型磁性隧道结已被制造。这种结构的结面积可以比传统的多层型结的结面积小得多。这对于制造表现出库仑阻塞的单电子器件是有利的。采用射频磁控溅射法在SiO2/Si衬底上沉积了8-20 nm的Ni薄膜。通过光刻和干法蚀刻将膜图案化为条纹形状。利用AFM纳米氧化技术制备了氧化物纳米线,并成功制备了平面型磁性隧道结,在17- 300 K温度范围内的电流-电压测量中观察到了二极管特性。研究发现,所制备的氧化物纳米线可以作为隧道势垒。在形式上,屏障的宽度是厚的,但是使用AFM操作的轻敲模式的AFM纳米氧化实现了更薄的宽度。1.5eV的势垒高度和1.7nm的势垒宽度由使用Simmons公式拟合的计算得出。这些结果是有前途的铁磁单电子晶体管表现出库仑阻塞。

项目成果

期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Direct Modification of Magnetic Domains in Co Nanostructures by AFM-Lithography
通过 AFM 光刻直接修饰 Co 纳米结构中的磁畴
Modification of Electrical Properties and Magnetic Domain Structures in Magnetic Nanostructures by AFM Nano-lithography
通过 AFM 纳米光刻对磁性纳米结构中的电性能和磁畴结构进行改性
Direct Modification of Magnetic Domains in Co Nanostructures by AFM -Lithography
通过 AFM 光刻直接修饰 Co 纳米结构中的磁畴
Magnetoresistance of NiFe wires with modified structures by AFM nano-lithography
AFM 纳米光刻改性结构 NiFe 线的磁阻
AFM Lithography for Magnetic Nanostructures and Devices
用于磁性纳米结构和器件的 AFM 光刻
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TAKEMURA Yasushi其他文献

TAKEMURA Yasushi的其他文献

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{{ truncateString('TAKEMURA Yasushi', 18)}}的其他基金

Design and fabrication of endovascular implant controlled by external magnetic field
外磁场控制血管内植入物的设计与制作
  • 批准号:
    17K18874
  • 财政年份:
    2017
  • 资助金额:
    $ 2.05万
  • 项目类别:
    Grant-in-Aid for Challenging Research (Exploratory)
Evaluation method for analysis of heating mechanism of intercellular magnetic nanoparticles
细胞间磁性纳米粒子加热机理分析的评价方法
  • 批准号:
    26289124
  • 财政年份:
    2014
  • 资助金额:
    $ 2.05万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Design and fabrication of hyperthermia implants with self-control function of heating temperature and resonant frequency
具有加热温度和共振频率自控功能的热疗植入体的设计与制作
  • 批准号:
    24656226
  • 财政年份:
    2012
  • 资助金额:
    $ 2.05万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Study on evaluation methods of heating mechanism and distribution in cultured cell of magnetic nanoparticles
磁性纳米粒子培养细胞内加热机制及分布评价方法研究
  • 批准号:
    23360179
  • 财政年份:
    2011
  • 资助金额:
    $ 2.05万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Design and fabrication of resonant circuit for hyperthermia excited by magnetic resonance imaging(MRI)
磁共振成像(MRI)激发热疗谐振电路的设计与制作
  • 批准号:
    21656092
  • 财政年份:
    2009
  • 资助金额:
    $ 2.05万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Fabrication of planar magnetic nanostructures and control of their magnetization
平面磁性纳米结构的制备及其磁化强度的控制
  • 批准号:
    19360140
  • 财政年份:
    2007
  • 资助金额:
    $ 2.05万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Magneto-transport property of FeSe thin films prepared by selenization technique
硒化技术制备FeSe薄膜的磁输运特性
  • 批准号:
    11650318
  • 财政年份:
    1999
  • 资助金额:
    $ 2.05万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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