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Magneto-transport property of FeSe thin films prepared by selenization technique

硒化技术制备FeSe薄膜的磁输运特性

基本信息

批准号：
11650318
负责人：
TAKEMURA Yasushi
金额：
$ 0.7万
依托单位：
Yokohama National University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650318/
关键词：
FeScthin film magnetic thin film magneto-tranport property

项目摘要

Magneto-transport and structural properties of FeSe thin films prepared on GaAs substrates by selenization technique were studied.(1) Fe_2Se_3/Fe/GaAs structures were prepared by a selenization of Fe films on GaAs (001) substrate. The selenization is not a deposition process, but replacing Fe atoms by Se atoms supplied as molecular beams from K-cell. The substrate temperature was 400℃ and Se beam pressure was 4×10^<-8> Torr. Fe_2Se_3 compound, which was different from bulk stable structures of Fe_3Se_4 and Fe_7Se_8, was obtained by this technique.(2) From the resistivity and Hall effect measurements, it was found that the resistivity of FeSe thin film was ρ=1.1×10^<-4> Ωm, and carrier (electron) density was n=2.1×10^<23> m^<-3>. At the relatively low field region of the applied external magnetic field in Hall effect measurement, Hall resistivity exhibited similar to the extraordinary Hall effect which was observed in typical ferromagnetic materials. Details on magneto-transport property including anisotropic feature due to the crystal structure are followed.(3) From the x-ray reciprocal space mapping measured by 2theta(omega)-psi scan, it was found that the crystal structure of Fe_2Se_3 is cubic with a=0.551 nm by fitting the Fe_2Se_3 reflections. The cubic structure of Fe_2Se_3 was easily understood by the positions of Fe_2Se_3 reflections which locate at slightly lower 2theta angles than GaAs reflections. Both of Fe_2Se_3 (022) and (113) reflections which belong to different reflection planes in the reciprocal space were detected simultaneously. This indicated that Fe_2Se_3 cubes are not oriented in-plane direction of the layer.

研究了用硒化技术在GaAs衬底上制备的FeSe薄膜的磁输运特性和结构特性。(1)通过对GaAs（001）衬底上的Fe薄膜进行硒化处理，制备了Fe_2Se_3/Fe/GaAs结构。硒化不是一个沉积过程，而是由K池分子束提供的Se原子取代Fe原子。衬底温度为400℃，Se束压力为4×10 - 6<-8>托。用该方法制备了不同于Fe_3Se_4和Fe_7Se_8体相稳定结构的Fe_2Se_3化合物。(2)通过电阻率和霍尔效应的测量，发现FeSe薄膜的电阻率为ρ=1.1×10^<-4>Ωm，载流子（电子）密度为n=2.1×10^<23>m^<-3>。在霍尔效应测量中，在外加磁场的相对低场区域，霍尔电阻率表现出类似于在典型铁磁材料中观察到的异常霍尔效应。下面详细介绍由于晶体结构导致的包括各向异性特征的磁传输特性。(3)由2 θ（ω）-psi扫描测量的x射线倒易空间图，拟合Fe_2Se_3的反射谱，发现Fe_2Se_3的晶体结构为立方晶系，a= 0.551nm。Fe_2Se_3的立方结构很容易通过Fe_2Se_3反射的位置来理解，Fe_2Se_3的反射位于比GaAs反射略低的2 θ角。在倒易空间中属于不同反射面的Fe_2Se_3（022）和（113）反射被同时探测到。这表明Fe_2Se_3立方晶在该层中不是面内取向的。