Magnetic van der Waals Heterostructures

磁性范德华异质结构

• 批准号: 471289011
• 负责人: Professor Dr. Thomas Heine
• 金额: --
• 依托单位: Professur für Theoretische Chemie
• 依托单位国家: 德国
• 项目类别: DIP Programme
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/471289011?language=en
• 关键词: Magnetic; van; der; Waals; Heterostructures

Inorganic van der Waals (vdW) semiconductors have attracted a tremendous attention in the last dec-ade due to their unique properties, including valley electronics, topological superconductivity and spin Hall effect. These materials are organized in atomistic layers with strong interactions within the layers and weak vdW forces between layers, hence enabling the isolation of single atomic or molecular layers. Furthermore, new materials with various properties can be engineered by the formation of heterostruc-tures (HSs) by stacking of dissimilar layers. These HSs feature seamless interlayer contact, sharp and localized electronic potential, low strain and interlayer forces, and an angular degree of freedom in stacking registry. An angular misfit rotation between layers can results in a moiré lattice with a large unit cell, and electronic and optical properties different from the constituent layers. We propose to investigate the nature of HSs formed from novel magnetic 2D materials and the new physical phenomena they offer, bearing the potential of a transformative impact. The proposed work will investigate HSs of 2D antiferromagnetic (AFM) semiconductors with valley-polarized transition metal dichalcogenides or/and 2D superconductors. We aim to control the HSs properties by tuning the strength and nature of interlayer interactions, as resulted by rotational alignment, interlayer charge transfer and electronic characteristic of the layers. The proposed research will involve cutting edge optical, magneto-optical and electrical experimental techniques along with the development of supporting theoretical paradigms, aimed at understanding the complex interfaces of magnetic HSs. Ultimately, the accumulated knowledge on 2D HSs will be har-nessed towards demonstrating a working paradigm of novel quantum electronic device. The work plan designed to take advantage of the synergetic multidisciplinary team and the close cooperation between groups.

无机货车德瓦耳斯（vdW）半导体由于其独特的性质，如谷电子学、拓扑超导性和自旋霍尔效应，在过去的十年里引起了人们的极大关注。这些材料被组织在原子层中，层内具有强相互作用，层间具有弱vdW力，因此能够隔离单个原子或分子层。此外，具有各种性能的新材料可以通过堆叠不同层形成异质结构（HS）来设计。这些HS具有无缝的层间接触，尖锐和局部化的电子电位，低应变和层间力，以及堆叠注册的角度自由度。层之间的角度失配旋转可以导致具有大的单位晶胞的莫尔晶格，以及与组成层不同的电子和光学性质。我们建议研究由新型磁性2D材料形成的HS的性质以及它们提供的新物理现象，这些物理现象具有变革性影响的潜力。本论文将研究二维反铁磁半导体与谷极化过渡金属二硫族化物或/和二维超导体的HS。我们的目标是通过调整层间相互作用的强度和性质来控制HSs的性质，这是由层的旋转取向、层间电荷转移和电子特性引起的。拟议的研究将涉及尖端的光学，磁光和电学实验技术沿着的支持理论范式的发展，旨在了解磁性HS的复杂界面。最终，在2D HS上积累的知识将用于展示新型量子电子器件的工作范例。该工作计划旨在利用多学科团队的协同作用和各小组之间的密切合作。