Magnetic van der Waals Heterostructures

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Inorganic van der Waals (vdW) semiconductors have attracted a tremendous attention in the last dec-ade due to their unique properties, including valley electronics, topological superconductivity and spin Hall effect. These materials are organized in atomistic layers with strong interactions within the layers and weak vdW forces between layers, hence enabling the isolation of single atomic or molecular layers. Furthermore, new materials with various properties can be engineered by the formation of heterostruc-tures (HSs) by stacking of dissimilar layers. These HSs feature seamless interlayer contact, sharp and localized electronic potential, low strain and interlayer forces, and an angular degree of freedom in stacking registry. An angular misfit rotation between layers can results in a moiré lattice with a large unit cell, and electronic and optical properties different from the constituent layers. We propose to investigate the nature of HSs formed from novel magnetic 2D materials and the new physical phenomena they offer, bearing the potential of a transformative impact. The proposed work will investigate HSs of 2D antiferromagnetic (AFM) semiconductors with valley-polarized transition metal dichalcogenides or/and 2D superconductors. We aim to control the HSs properties by tuning the strength and nature of interlayer interactions, as resulted by rotational alignment, interlayer charge transfer and electronic characteristic of the layers. The proposed research will involve cutting edge optical, magneto-optical and electrical experimental techniques along with the development of supporting theoretical paradigms, aimed at understanding the complex interfaces of magnetic HSs. Ultimately, the accumulated knowledge on 2D HSs will be har-nessed towards demonstrating a working paradigm of novel quantum electronic device. The work plan designed to take advantage of the synergetic multidisciplinary team and the close cooperation between groups.