权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Tailoring 2d transition metal dichalcogenides for electronic applications

定制用于电子应用的二维过渡金属二硫属化物

基本信息

批准号：
211502237
负责人：
Professor Dr. Thomas Heine
金额：
--
依托单位：
Professur für Theoretische Chemie
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2012
资助国家：
德国
起止时间：
2011-12-31 至 2015-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/211502237?language=en
关键词：
Tailoring 2d transition metal dichalcogenides

项目摘要

Consumer electronic devices are getting smaller but also hotter as the semiconductor industry rapidly approaches the performance limits of current silicon-based CMOS technology. Short-channel effects and gate leakage increase levels of heat dissipation as transistors are miniaturized. Possible long-term solutions to this problem involve replacing silicon with another material that would perform better at smaller scales. Such a replacement may also enable new functionalities for electronic devices, such as flexible electronics. This proposal aims to open the way to fabricate electronic circuits based on twodimensional transition metal dichalcogenides (TMDs), newly emerging semiconducting analogues of graphene. It has been recently shown that single layers of MoS2 exhibit electrical properties, notably field-effect transistor characteristics, comparable to thin silicon and that it can be processed on a large-scale using solution-based exfoliation. Preliminary experimental work carried out by one of the applicants indicates that the substrate, dielectric environment and contact type play a critical role in achieving high levels of electrical performance. In order to enable rational design of future electronic devices, we propose here to combine experimental work with theoretical studies and find the optimal substrate, dielectric environment and contact geometry for field-effect devices based on single-layer MoS2 and related materials. This will allow widespread research in the basic properties and practical applications of these new promising materials.

随着半导体行业迅速接近当前以硅为基础的cmos技术的性能极限，消费电子设备变得越来越小，但也越来越热。随着晶体管的小型化，短沟道效应和栅极泄漏增加了散热水平。这个问题可能的长期解决方案包括用另一种材料取代硅，这种材料在较小的规模下会表现得更好。这样的替换还可以实现电子设备的新功能，例如柔性电子设备。这一提议旨在为基于新出现的石墨烯半导体类似物--二维过渡金属二卤化物(TMD)制造电子电路开辟道路。最近的研究表明，单层MoS2显示出与薄硅相当的电学性质，尤其是场效应晶体管特性，并且可以使用基于溶液的剥离来大规模加工。其中一位申请者进行的初步实验工作表明，衬底、介电环境和触点类型在实现高水平的电性能方面起着关键作用。为了能够合理地设计未来的电子器件，我们建议将实验工作与理论研究相结合，寻找基于单层MoS_2及相关材料的场效应器件的最佳衬底、介电环境和接触几何形状。这将使对这些新材料的基本性质和实际应用的广泛研究成为可能。