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Control of microstructures of silicon nanocrystals by ion implantation and their application for optical devices.

离子注入控制硅纳米晶的微观结构及其在光学器件中的应用。

基本信息

批准号：
17510098
负责人：
IWAYAMA Tsutomu
金额：
$ 2.3万
依托单位：
Aichi University of Education
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17510098/
关键词：
Silicon Ion Implantation Nanocrystals Silicon Photonics Optical Properties Luminescence RTA Optical Devices

项目摘要

Si ion implantation into Si0_2 and subsequent high temperature anneals induce the formation of embedded luminescent Si nanocrystals. The potentialities of rapid thermal annealing (RTA) to enhance the photoluminescence (PL) as well as those to induce low temperature formation of luminescent Si nanocrystals have been investigated. Si ion implantation was used to synthesize specimens of Si0_2 containing supersaturated Si. The implanted samples were rapidly annealed only for a few minutes. After that, in some cases before that, the samples were annealed for a few hours using a conventional furnace to induce Si precipitation. PL spectra were measured at various steps of anneal processes. The luminescence intensity is strongly enhanced with RTA prior to a conventional furnace anneal. The luminescence intensity, however, decreases when RTA follows conventional furnace annealing. It is found that the order of heat treatment is an important factor in intensities of the luminescence. Enhancement is also found to be typical for low dose samples. Moreover, the visible photoluminescence is found to be observed even after furnace anneal below 1000 ℃, only for RTA treated samples. In forming the luminescent Si nanocrystals in a Si0_2 matrix from supersaturation, decomposition, segregation, diffusion, nucleation, aggregation, growth and crystallization processes are clearly important. As a result of diffusion limited segregation, a number of small aggregates will be formed and they act as a nucleation point.In the present research project, we have found that the luminescence intensity is strongly enhanced with a rapid thermal anneal prior to a conventional furnace anneal and the luminescence intensity decreases with a rapid thermal annealing after a conventional furnace anneal. Moreover, a post implantation rapid thermal anneal prior to a furnace anneal is effective to achieve low temperature formation of luminescent Si nanocrystals.

Si离子注入到SiO_2中并随后高温退火诱导形成嵌入式发光Si纳米晶。研究了快速热退火（RTA）增强发光（PL）以及诱导低温形成发光硅纳米晶的可能性。用硅离子注入法合成了含过饱和硅的SiO_2样品。注入的样品仅快速退火几分钟。在此之后，在此之前的某些情况下，使用常规炉将样品退火几个小时以诱导Si沉淀。在退火过程的各个步骤测量PL光谱。在常规炉退火之前，使用RTA强烈增强发光强度。然而，当RTA遵循常规炉退火时，发光强度降低。结果表明，热处理的顺序是影响发光强度的重要因素。增强也被发现是典型的低剂量样品。此外，发现即使在低于1000 ℃的炉内退火后，也观察到可见光致发光，仅对于RTA处理的样品。在由过饱和在SiO_2基质中形成发光Si纳米晶时，分解、偏析、扩散、成核、聚集、生长和结晶过程显然是重要的。由于扩散限制的偏析，将形成一些小的聚集体，它们作为一个nucleationpoint.In本研究项目中，我们已经发现，发光强度强烈增强与快速热退火之前，常规炉退火和发光强度下降与快速热退火后，常规炉退火。此外，在炉退火之前的注入后快速热退火对于实现发光Si纳米晶体的低温形成是有效的。

项目成果

期刊论文数量（18）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Lamp annealing effects on the formation process of implanted silicon nanocrystals in SiO_2.

灯退火对SiO_2中注入硅纳米晶形成过程的影响

DOI：
发表时间：
2007
期刊：
Nucl. Instrum. Methods B 257
影响因子：
0
作者：
J.Ariake;T.Chiba;N.Honda;J.Ariake;有明順;J.Ariake;有明順;有明順;J.Ariake;J.Ariake;J.Ariake;J.Ariake;有明順(共著);J.Ariake (one of the coauthors);有明順;T.S.Iwayama
通讯作者：
T.S.Iwayama

Enhanced luminescence from encapsulated silicon nanocrystals in SiO2 with rapid thermal anneal