Basic study on the nano-contact formation at the metal/SiGe semiconductor Interface

超大规模集成系统中的MOS器件不断缩小，通过减少电子通过通道所需的时间，从而产生加速器件。除此之外，如果提高通过通道的电子的迁移率，我们可以获得更多的高性能器件。因此，具有高迁移率的半导体材料是应用于该通道的需求。应变Si和SiGe是具有比Si更高电子迁移率的候选材料。在使用这些材料的器件中，“源”和“漏”电极上需要低阻欧姆触点。均匀固相反应是制备低阻纳米接触电极的基础技术。因此，我们通过纳米颗粒Ni来研究Ni在Si和Ni在SiGe上的均匀固相硅化反应。结果表明：纳米Ni晶粒与Si晶粒反应均匀，经700℃退火30 min后形成的NISi相较为稳定；在SiGe衬底上，本研究通过均匀固相反应形成了与衬底成分几乎相同的NISIGe。得到的结果表明，我们的建议是有效的均匀纳米接触的形成。最后的结果将在未来的出版物中提出。

MOS devices in ultra-large-scaled integrated systems are continuously scaled-down, resulting in a speed-up device by decreasing the time required for electrons to pass through the channel. In addition to this, if the mobility of electrons passing through the channel is raised, we can obtain more high performance devices. Thus, semiconductor materials with high mobility are the demand for applying to the channel. Strained Si and SiGe are candidates of such materials having higher electron mobility than that of Si. In the devices using these materials, low resistive ohmic contacts are required on the 'source' and 'drain' electrodes. As the basic technology to develop the scaled-down electrode formation, uniform solid-phase reaction to obtain the low-resistive nano-contact is necessary. Thus, we examined the uniform solid-phase reaction of silicidation of Ni on Si and Ni on SiGe by applying Ni with nano-grains. The results revealed that uniform reaction between nano Ni grains and Si results In the formation of NISi phase well stable due to annealing at 700 ℃ for 30 min. On the SiGe substrate, uniform formation of NISIGe almost the same composition as that of substrate is formed by the uniform solid-phase reaction in this study. The obtained results reveals that our proposal is effective for the uniform nano-contact formation. The concluding results will presented in the publications in future.