Basic study on the nano-contact formation at the metal/SiGe semiconductor Interface

超大规模集成系统中的MOS器件不断缩小，通过减少电子通过沟道所需的时间来实现加速器件。除此之外，如果提高通过沟道的电子的迁移率，我们可以获得更高性能的器件。因此，具有高迁移率的半导体材料是应用于沟道的需求。应变Si和SiGe是具有比Si更高的电子迁移率的这种材料的候选。在使用这些材料的器件中，在“源极”和“漏极”电极上需要低电阻欧姆接触。均匀固相反应制备低电阻纳米接触是实现电极小型化的基础技术。因此，我们研究了均匀的固相反应的硅化的Ni上的Si和Ni上的SiGe通过施加Ni与纳米晶粒。结果表明，在700 ℃退火30 min后，纳米Ni颗粒与Si发生均匀的固相反应，形成了稳定的NISi相;在SiGe衬底上，通过均匀的固相反应，形成了与衬底成分几乎相同的均匀NISIGe相。结果表明，该方法可以有效地实现均匀的纳米接触。结论性结果将在今后的出版物中介绍。

MOS devices in ultra-large-scaled integrated systems are continuously scaled-down, resulting in a speed-up device by decreasing the time required for electrons to pass through the channel. In addition to this, if the mobility of electrons passing through the channel is raised, we can obtain more high performance devices. Thus, semiconductor materials with high mobility are the demand for applying to the channel. Strained Si and SiGe are candidates of such materials having higher electron mobility than that of Si. In the devices using these materials, low resistive ohmic contacts are required on the 'source' and 'drain' electrodes. As the basic technology to develop the scaled-down electrode formation, uniform solid-phase reaction to obtain the low-resistive nano-contact is necessary. Thus, we examined the uniform solid-phase reaction of silicidation of Ni on Si and Ni on SiGe by applying Ni with nano-grains. The results revealed that uniform reaction between nano Ni grains and Si results In the formation of NISi phase well stable due to annealing at 700 ℃ for 30 min. On the SiGe substrate, uniform formation of NISIGe almost the same composition as that of substrate is formed by the uniform solid-phase reaction in this study. The obtained results reveals that our proposal is effective for the uniform nano-contact formation. The concluding results will presented in the publications in future.