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Single-oriented thin film interconnects in LSI technology prepared based on the epitxial relationships

基于外延关系制备的LSI技术中的单向薄膜互连

基本信息

批准号：
08650361
负责人：
NOYA Atsushi
金额：
$ 1.34万
依托单位：
Kitami Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650361/
关键词：
LSI oriented thin films metal semiconductor contacts epitaxial growth

项目摘要

Metal/semiconductor contacts with a stacking structure consisting of a single oriented thin film of interconnects on a single oriented diffusion barrier deposited on Si are developed. The contacts of (1) Al (001)/YSi_<2-x>/Si (001), (2) Cu (111) /W (110) /Si(100), (3) Cu (110) /ZrN (100) /Si (100), (4) Cu (111) /Ta-W (110) /Si (100), and (5) Al (111) /Ta-W (110) /Si (100) are successfully prepared. The epitaxial growth of each layr in the contact of (1) and the oriented layrs in those of (2) - (5) are confirmed by x-ray diffraction and transmission electron microscopy. The contact of (1) fails due to the formation of Al_3Y compound upon annealing for 1 h at temperatures over 450ﾟC.Since the epitaxial relationships restrict the combination of materials used in the contacts, the thermal stability is not always compatible with the formation of epitaxial contacts. The contacts with single oriented layrs, on the other hand, are stable upon annealing at high temperatures. The [110] oriented W barrier is consumed by a uniform silicidation reaction, and the contact is sable upon annealing at 690ﾟC for 1 h, while the polycrystalline W barrier fails before the silicidation reaction occurs. The ZrN barrier is stable upon annealing at 750ﾟC,but fails due to re-crystallization upon annealing at 800ﾟC.The solid solution of Ta-W barrier shows an excellent barrier property as compared with each component barrier. The Ta_<0.5>W_<0.5> barrier is the most stable among alloys with different compositions, which tolerates upon annealing at 700ﾟC.The [111] texture of Al is grown on the Ta-W barriers, and is useful for the electromigration torelant contacts.

金属/半导体接触与堆叠结构组成的一个单一的取向薄膜的互连上的一个单一的取向扩散障碍沉积在Si上开发。成功制备了Al（001）/YSi_2/<2-x>Si（001）、Cu（111）/W（110）/Si（100）、Cu（110）/ZrN（100）/Si（100）、Cu（111）/Ta-W（110）/Si（100）和Al（111）/Ta-W（110）/Si（100）接触。用X射线衍射和透射电子显微镜证实了（1）接触中各层的外延生长和（2）-（5）接触中各层的取向。由于在450 ℃以上退火1 h时形成Al_3Y化合物，（1）的接触失效。由于外延关系限制了接触中使用的材料的组合，热稳定性并不总是与外延接触的形成相容。另一方面，具有单一取向层的接触在高温退火时是稳定的。[110]取向的W阻挡层被均匀的硅化反应消耗，并且接触在690 ° C下退火1 h后稳定，而多晶W阻挡层在硅化反应发生之前失效。ZrN阻挡层在750 ℃退火时稳定，但在800 ℃退火时由于再结晶而失效。与各组分阻挡层相比，Ta-W阻挡层的固溶体显示出优异的阻挡性能。在不同成分的合金中，Ta_<0.5>W_<0.5>阻挡层最稳定，能耐受700 ℃的退火，Al的[111]织构生长在Ta_W_阻挡层上，有利于抗电迁移接触。