Preparation of Aluminum-copper Intermetallic Compound Film and Its Application to the Metallization material for LSI

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The intermetallic compound film of Cu_9Al_4 was prepared by cosputtering at substrate temperatures below 300^ﾟC. The prepared film is structurally quite stable up to about 700^ﾟC, showing little change in X-ray diffraction pattern. The film with well-textured polycrystalline grains has a low electrical resistivity of 13muOMEGA-cm. The interaction of deposited Cu_9Al_4 film with a silicon substrate is then studied by Auger electron spectroscopy. Although the incorporation of silicon into the Cu_9Al_4 film with low concentration level is observed, the interface is stable up to the annealing temperature of 700^ﾟC without formin aluminum spikes or a copper silicide layer. Then, the diffusion barrier of TiN is interposed between the Cu_9Al_4 film and Si to suppress the incorporation of Si into the film. The formed Cu_9Al_4/TiN/Si system is found to be stable up to about 670^ﾟC. The mass transport across the interface of Cu_9Al_4/TiN then becomes at more higher temperatures on the opportunity of the reaction between Al and Ti. It is revealed that Cu_9Al_4 film is a useful material to realize a stable interface when employed as a metallization material for silicon device integration.