Preparation of Aluminum-copper Intermetallic Compound Film and Its Application to the Metallization material for LSI

铝铜金属间化合物薄膜的制备及其在LSI金属化材料中的应用

• 批准号: 01550235
• 负责人: NOYA Atsushi
• 金额: $ 0.96万
• 依托单位: Kitami Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550235/
• 关键词: metallization material; intermetallic compound; thin film; Cu_9Al_4; metal-semiconductor interface; Al_4Cu_9

The intermetallic compound film of Cu_9Al_4 was prepared by cosputtering at substrate temperatures below 300^ﾟC. The prepared film is structurally quite stable up to about 700^ﾟC, showing little change in X-ray diffraction pattern. The film with well-textured polycrystalline grains has a low electrical resistivity of 13muOMEGA-cm. The interaction of deposited Cu_9Al_4 film with a silicon substrate is then studied by Auger electron spectroscopy. Although the incorporation of silicon into the Cu_9Al_4 film with low concentration level is observed, the interface is stable up to the annealing temperature of 700^ﾟC without formin aluminum spikes or a copper silicide layer. Then, the diffusion barrier of TiN is interposed between the Cu_9Al_4 film and Si to suppress the incorporation of Si into the film. The formed Cu_9Al_4/TiN/Si system is found to be stable up to about 670^ﾟC. The mass transport across the interface of Cu_9Al_4/TiN then becomes at more higher temperatures on the opportunity of the reaction between Al and Ti. It is revealed that Cu_9Al_4 film is a useful material to realize a stable interface when employed as a metallization material for silicon device integration.

在衬底温度低于300^ C的条件下，采用共溅射法制备了Cu_9Al_4金属间化合物薄膜。制备的薄膜结构稳定，高达700^ C， x射线衍射图变化不大。该薄膜具有结构良好的多晶颗粒，其电阻率低至13mu - omega -cm。用俄歇电子能谱研究了沉积的Cu_9Al_4薄膜与硅衬底的相互作用。虽然在低浓度Cu_9Al_4薄膜中发现了硅的掺入，但在700^ cc的退火温度下，界面是稳定的，没有双胍铝峰或硅化铜层。然后，在Cu_9Al_4薄膜和Si之间插入TiN的扩散势垒，抑制Si的掺入。所形成的Cu_9Al_4/TiN/Si体系在高达670^天边天边的温度下是稳定的。在Al和Ti反应的机会下，Cu_9Al_4/TiN界面上的质量传递在更高的温度下发生。结果表明，作为硅器件集成的金属化材料，Cu_9Al_4薄膜是实现稳定界面的有用材料。

项目成果

野矢 厚,他: "CoーsputteringによるAl_4Cu_9薄膜の作成" 第37回応用物理学関係連合講演会予稿集. 29pーZHー11. 274 (1990)

Atsushi Noya 等人：“共溅射制备 Al_4Cu_9 薄膜”第 37 届应用物理学会会议记录 29p-ZH-11 (1990)。

A.Noya,他3名: "Auger electron spectroscopy study on the stability of the interface between deposited Cu_9Al_4 intermatallic compound film and Si" Jpn.J.Appl.Phys.30. (1991)

A.Noya等3人：“沉积Cu_9Al_4金属间化合物薄膜与Si之间界面稳定性的俄歇电子能谱研究”Jpn.J.Appl.Phys.30（1991）。

野矢 厚,他3名: "Al_4Cu_9/TiN/Si積層界面の熱的安定性" 1991年電子情報通信学会春季全国大会講演論文集. (1991)

Atsushi Noya，其他 3 人：“Al_4Cu_9/TiN/Si 层压界面的热稳定性”1991 年 IEICE 春季全国会议论文集（1991）。

野矢厚他: "Al-Cu金属間化合物薄膜の作成" 電子情報通信学会技術研究報告. CPM89-67 (1989)

Atsushi Noya等人：《Al-Cu金属间化合物薄膜的制备》IEICE技术研究报告CPM89-67（1989）。

A.Noya,他: "Preparation of Cu_9Al_4 intermetallic cimpound film as a metallization material for LSI technology" Jpn.J.Appl.Phys.30. L624-L627 (1991)

A.Noya 等人：“作为 LSI 技术金属化材料的 Cu_9Al_4 金属间化合物薄膜的制备”Jpn.J.Appl.Phys.30 (1991)。