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Preparation of preferentially oriented thin film interconnect on SiOィイD22ィエD2

SiO2D22 上择优取向薄膜互连的制备

基本信息

批准号：
10650300
负责人：
NOYA Atsushi
金额：
$ 1.92万
依托单位：
Kitami Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650300/
关键词：
LSI Preferential orientation interconnect diffusion barrier Cu Nb V Ta-W alloy 集積回路高配向薄膜

项目摘要

The Cu interconnect in Si-LSI has been fabricated with a diffusion barrier in the ditch of SiOィイD22ィエD2 by the so-called damascene process. For the Cu interconnect technology, (1) a preferential orientation of Cu (111) plane is desired for suppressing an electromigration failure, and (2) an effective diffusion barrier is also desired as thin as possible. The diffusion barrier materials, which satisfy these issues, are examined in the present study. Transition metal of Nb or V, which is in the bcc structure, is applied as a diffusion barrier between Cu and SiOィイD22ィエD2. The results show that the preferential orientation of Cu (111) is obtained onto the Nb or V(110) oriented barrier formed on the amorphous SiOィイD22ィエD2 layer. The interconnect system with these barriers is found to be difficult to form the thin barrier due to the diffusion of barrier materials through the Cu layer and the reaction at the barrier/SiOィイD22ィエD2 interface. For the formation of thin barrier, NbN or VN is applied to the diffusion barrier. Thermally stable thin barrier is obtained in the Cu/VN(10 nm)/SiOィイD22ィエD2 system, however, Cu(111) orientation in the system is inferior to that using a Nb or V barrier. The barrier of Ta-W solid solution maintaining a bcc structure is then applied as a barrier in the above-mentioned system. This system configuration realizes the Cu (111) preferential orientation on the Ta-W (110) barrier, and shows an excellent thermal stability suppressing the diffusion and reaction observed in the system with Nb or V barrier even at a barrier of 20 nm thick. We can achieve the formation of thermally stable thin barrier layer between Cu and SiOィイD22ィエD2 by using Ta-W alloy films with a suitable composition.

采用扩散阻挡层工艺在Si-LSI中的Cu互连线上制备了SiO_2-D_22-D_2沟道。对于Cu互连技术，（1）期望Cu（111）面的优先取向以抑制电迁移故障，并且（2）还期望有效的扩散阻挡层尽可能薄。在本研究中，满足这些问题的扩散阻挡层材料进行了检查。在Cu和SiO_xD_22_xD_2之间施加具有bcc结构的过渡金属Nb或V作为扩散阻挡层。结果表明，Cu（111）在非晶SiO_2-D_22-D_2层上形成的Nb或V（110）取向势垒上获得择优取向。发现具有这些阻挡层的互连系统难以形成薄阻挡层，这是由于阻挡层材料通过Cu层的扩散以及在阻挡层/SiO_xD_22_xD_2界面处的反应。为了形成薄势垒，将NbN或VN施加到扩散势垒。在Cu/VN（10 nm）/SiO_2/VN_22/SiO_2/VN_22体系中获得了热稳定的薄势垒，但Cu（111）取向不如Nb或V势垒。然后，将保持体心立方结构的Ta-W固溶体的屏障用作上述系统中的屏障。该系统配置实现了Cu（111）在Ta-W（110）势垒上的优先取向，并且显示出优异的热稳定性，即使在20 nm厚的势垒下，也抑制了在具有Nb或V势垒的系统中观察到的扩散和反应。采用合适成分的Ta-W合金薄膜，可以在Cu和SiO_xD_（22）O_xD_（22）之间形成热稳定的薄势垒层。