A study on improvement and functionalization of non-stoichiometric silicon titanium nitride compounds

非化学计量硅钛氮化物的改性及功能化研究

• 批准号: 17560590
• 负责人: YOSHITAKA Kasukabe
• 金额: $ 2.18万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560590/
• 关键词: non-stoichiometric compounds; nitride; functionalized materials; ion implantation; in-situ observation; transmission electron microscope; electron energy loss spectroscope; molecular orbital calculation

Recently, it has been reported that properties of non-stoichiometric titanium nitride compounds (TiN_y), such as electrical conductivity, diffusion barrier, wear resistance, etc. depend not only on chemical composition, but also on orientation relationships between TiN_y films and substrates. Therefore, much interest has been focused on atomistic growth processes of TiN_y films.In order to clarify the atomistic growth processes due to ion implantation and to control the orientation, in-situ observations by using transmission electron microscope and electron energy loss spectroscope have been carried out, along with composition analysis and with the characterization of electronic structure. TiN_y has epitaxially grown in N-implanted Ti films by nitriding both hcp-Ti and TiH_x., or only hcp-Ti with epitaxial orientations in as-deposited Ti films on NaC1 (001) substrates at room temperature or 250 ℃. The characterizations of electronic structure of Ti films before and after implantation indicate that octahedral sites of hcp-Ti with larger space have higher electron density, which leads to the invasion of implanted ions into the octahedral sites, and that the hcp-fcc transformation accompanied with the partial inheritance of atomic arrangement of hcp-Ti is induced by the shear in <01・0> direction on (00・1) plane promoted by the forming of strong covalent bonds mainly consisted of hybridized orbitals due to combination of Ti3d and N2p, and by the weakening of Ti-Ti bonds. In conclusion, atomistic epitaxial growth processes of Ti compound films by ion implantation have been clarified by the approach of the detailed analysis of experimental results, combined with the characterization of electronic structure, which gives rise to a possibility to develop new functionalized Ti compound films with controlled orientations, for example, TiN_y diffusion barriers in Au/α-Sn systems, band-gap-controlled functionalized SiTi_xN_y systems.

最近有报道称，非化学计量氮化钛化合物（TiN_y）的导电性、扩散阻挡层、耐磨性等性能不仅取决于化学成分，还取决于TiN_y薄膜与基底之间的取向关系。因此，TiN_y薄膜的原子生长过程受到人们的广泛关注。为了阐明离子注入的原子生长过程并控制取向，利用透射电子显微镜和电子能量损失谱仪进行了原位观察，并进行了成分分析和电子结构表征。在室温或250 ℃下，通过氮化hcp-Ti和TiH_x，在N注入的Ti薄膜中外延生长TiN_y，或者仅在NaC1（001）衬底上沉积的Ti薄膜中外延取向的hcp-Ti。注入前后Ti薄膜的电子结构表征表明，空间较大的hcp-Ti八面体位点具有较高的电子密度，导致注入离子侵入八面体位点，并且hcp-fcc转变伴随着hcp-Ti原子排列的部分继承，是由在<01・0>方向的剪切引起的。 通过形成强共价键而促进的(00·1)面主要由Ti3d和N2p结合导致的杂化轨道以及Ti-Ti键的弱化组成。总之，通过对实验结果的详细分析，结合电子结构的表征，阐明了离子注入Ti化合物薄膜的原子外延生长过程，这为开发具有受控取向的新型功能化Ti化合物薄膜提供了可能，例如Au/α-Sn体系中的TiN_y扩散势垒、带隙控制的功能化薄膜等。 SiTi_xN_y 系统。

项目成果

Characterization of Deposited and Nitrogen implanted Titanium Films

沉积钛膜和氮注入钛膜的表征

• 发表时间: 2005
• 期刊: e-J. Surf. Sci. Nanotech. 3
• 作者: 三枝進;初田亨ほか;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;粕壁善隆;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;S.Nishida;J.J.Wang;J.J.Wang
• 通讯作者: J.J.Wang

イオン注入法によるチタン薄膜の窒化機構

离子注入法钛薄膜渗氮机理

• 发表时间: 2006
• 期刊: まてりあ 45巻1号
• 作者: 三枝進;初田亨ほか;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;粕壁善隆
• 通讯作者: 粕壁善隆

Characterization of Carbonizing Processes of Titanium Thin Films by Carbon-Implantation

碳注入钛薄膜碳化过程的表征

• 发表时间: 2006
• 期刊: JAEA-Review 2006-042
• 作者: 三枝進;初田亨ほか;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;粕壁善隆;Y.Kasukabe;Y.Kasukabe
• 通讯作者: Y.Kasukabe

Growth Mechanism of Cubic Titanium Nitride Thin Films by Nitrogen-Implantation

氮注入立方氮化钛薄膜的生长机理

• 发表时间: 2006
• 期刊: JAEA-Review 2005-1
• 作者: 三枝進;初田亨ほか;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;粕壁善隆;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe
• 通讯作者: Y.Kasukabe

Carbonizing Processes of Titanium Thin Films by Carbon-Implantation

钛薄膜渗碳碳化工艺

• 发表时间: 2005
• 期刊: e-J. Surf. Sci. Nanotech. 3
• 作者: 三枝進;初田亨ほか;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;粕壁善隆;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;S.Nishida
• 通讯作者: S.Nishida