Nano-integration of Metal Nanodot Nonvolatile Memory

点击翻译按钮获取中文摘要

In this research, SAND method was developed to form metal nanodot (MND) layer. The tungsten nanodots with high density of 1.3x10^<13>/cm^2 and small size of ~1.5nm was successfully formed. The memory transistors with MND floating gate and high-k blocking dielectric were also fabricated. The cobalt nanodots memory shows a long retention time, excellent endurance, and large memory window. A novel memory with potential-engineered dual MND layers was successfully fabricated and operated properly.