Theoretical Design of Nano-Device and Nano-Interface by First Principles Approach

在这四年的项目中，我们取得了许多重要成果，导致纳米技术的突破。主要结果如下。(1)不同维度系统之间的新物理学的建议。(2)具有高编程/擦除耐久性的MONOS存储器的指导原则。（3）石墨烯基材料的能带结构设计。(4)纳米级电容的澄清。(5)肖特基势垒极限击穿的理论建议。(6)硅纳米结构中有效质量的异常。(7)原子空位对应变锗沟道的严重影响。

In this four years project, we have obtained many important results which lead a breakthrough of nano-technologies. The primary results are as follows. (1) Proposal of new physics between different dimensional systems. (2) Guiding principles for MONOS memories with high program/erase endurance, (3) Band structure design of graphene based materials. (4) Clarification of nano-scale capacitances. (5) Theoretical proposal of breakdown of Schottky barrier limits. (6) Anomaly of effective masses in Si nano-structures. (7) Serious effect of atomic vacancies for strained Ge channels.