Realization of non-dislocation SiC crystal

提高衬底质量对SiC材料在高性能功率器件中的应用具有重要意义。本研究的目的是通过溶液生长法实现“超高质量”晶体的生长。在我们的研究中发现，螺纹位错通过宏观步进转变为基面上的其他缺陷，并且在晶体生长过程中被扫除。此外，转换比率取决于宏观步骤的高度和微观结构。利用这种转化现象，我们已经证明了SiC的超高质量生长。

The improvement of substrate quality is important to apply SiC materials to high-performance power device. The purpose of this study is to achieve "ultra-high quality" crystal grown by solution growth method. In our research, it has been revealed that threading dislocations are converted to other defects in the basal planes by macrosteps advancing and the converted defects are swept from the crystal during growth process. In addition, the converted ratio depends on the height and microstructure of the macrosteps. Utilizing this conversion phenomenon, we have demonstrated the ultra-high quality growth of SiC.