High-speed solution growth based on plasma-VLS method

本研究的目的是提出一种用于高速生长碳化硅大块晶体的新型“等离子体增强真空激光生长法”。首先，针对这种方法，我们新设计了一台用于高温生长的大气压等离子体发生器。其次，通过对丙烷吹气方式的优化，大大提高了对溶剂的碳供应。第三，通过刻蚀和X射线形貌术证实了溶液法生长的晶体质量较高。然而，由于技术问题，我们无法实现等离子体增强丙烷供气。

The purpose of this study is to propose a novel "plasma enhanced VLS growth method" for high-speed SiC bulk crystal growth. Firstly, for this method, we newly designed an atmospheric-pressure plasma generator for high temperature growth. Secondly, carbon supply to solvent was highly improved by optimization of propane gas blow method. Thirdly, the quality of crystal grown by solution method was confirmed to be higher by etching and X-ray topography technique. However, we could not realize plasma-enhanced propane gas supply due to a technical problem.