Improving silicon grain boundaries by linking electronic material quality and device manufacturing conditions

通过将电子材料质量和器件制造条件联系起来改善硅晶界

• 批准号: DP0452375
• 负责人: Dr Pietro Altermatt
• 金额: $ 10.24万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2004
• 资助国家: 澳大利亚
• 起止时间: 2004-01-01 至 2008-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP0452375
• 关键词: Improving; silicon; grain; boundaries; linking

This project develops our recent findings for improving silicon grain boundaries in electronic devices such as cheap solar cells, active matrix displays, thin-film transistors, etc. The performance of such devices and their applications have been limited mainly because no simple link between manufacturing conditions and device quality has been found. However, we recently verified a physical model description of grain boundaries on a broad range of devices, and this allows us to find such a link and to address prevailing problems from a new perspective. This will improve both the understanding and the manufacturing of such devices.

该项目发展了我们最近的发现，以改善廉价太阳能电池、有源矩阵显示器、薄膜晶体管等电子设备中的硅晶界。这些设备的性能及其应用一直受到限制，主要是因为还没有发现制造条件和设备质量之间的简单联系。然而，我们最近在一系列设备上验证了对晶界的物理模型描述，这使我们能够找到这样的联系，并从一个新的角度解决普遍存在的问题。这将改善对这类设备的理解和制造。