Development of growth strategies to fabricate wide band gap ferromagnetic semiconductors for spin electronics applications
Development of growth strategies to fabricate wide band gap ferromagnetic semiconductors for spin electronics applications
批准号:
DP0452309
负责人:
Prof Matthew Phillips
金额:
$20.46万
依托单位国家:
澳大利亚
项目类别:
Discovery Projects
财政年份:
2004
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2004-03-01 至 2007-12-31
中文摘要
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英文摘要
Spin Electronics technology will enable a revolutionary class of electronic devices. Gallium nitride (GaN) containing transition metals (TM) (eg Mn, Ni and Fe) is a very promising dilute magnetic semiconductor for practical spintronics applications as this material exhibits magnetic behaviour above room temperature. However, electronic and magnetic properties of this new class of semiconductors have not yet been optimised. This project aims to develop and test a new growth strategy, known as the co-doping method for the fabrication of high quality TM doped GaN. A broad range of complementary advanced spectroscopic techniques will be used to evaluate and refine this new fabrication method.
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国内基金
海外基金
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