Co-doping and transition metal doping of Gallium Nitride

点击翻译按钮获取中文摘要

Spintronics is poised to create a new paradigm in device electronics. Gallium nitride (GaN) containing trace amounts of transition metals (such as Fe,Ni) is a promising dilute magnetic semiconductor for spintronics as this material exhibits magnetic behaviour above room temperature. However, the electronic and magnetic properties of these GaN-based semiconductors have not been optimized, as yet. This project aims to establish and test a new growth strategy, know as the co-doping method, for the fabricate of high quality transition metal doped GaN. A broad range of complementary spectroscopic techniques will be used to refine this new fabrication technique.