Co-doping and transition metal doping of Gallium Nitride

氮化镓的共掺杂和过渡金属掺杂

• 批准号: LX0348128
• 负责人: Prof Matthew Phillips
• 金额: $ 2.11万
• 依托单位: University of Technology Sydney
• 依托单位国家: 澳大利亚
• 项目类别: Linkage - International
• 财政年份: 2003
• 资助国家: 澳大利亚
• 起止时间: 2003-06-01 至 2006-06-30
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LX0348128
• 关键词: Co; doping; transition; metal; Gallium

Spintronics is poised to create a new paradigm in device electronics. Gallium nitride (GaN) containing trace amounts of transition metals (such as Fe,Ni) is a promising dilute magnetic semiconductor for spintronics as this material exhibits magnetic behaviour above room temperature. However, the electronic and magnetic properties of these GaN-based semiconductors have not been optimized, as yet. This project aims to establish and test a new growth strategy, know as the co-doping method, for the fabricate of high quality transition metal doped GaN. A broad range of complementary spectroscopic techniques will be used to refine this new fabrication technique.

自旋电子学准备在设备电子学中创造一个新的范例。含有微量过渡金属（如Fe、Ni）的氮化镓（GaN）是一种很有前途的用于自旋电子学的稀磁半导体，因为这种材料在室温以上表现出磁性行为。然而，这些GaN基半导体的电子和磁性尚未得到优化。本计画旨在建立并测试一种新的成长策略，称为共掺法，以制造高品质的过渡金属掺杂氮化镓。一个广泛的互补光谱技术将用于完善这种新的制造技术。