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Study of Scattering Process in Tunnel-Device by Phonon Pulse.

声子脉冲隧道器件散射过程的研究。

基本信息

批准号：
09044175
负责人：
MIYASATO Tatsuro
金额：
$ 2.5万
依托单位：
Kyushu Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for international Scientific Research
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09044175/
关键词：
Heat-pulse bolometer decomlution SiGe tunneling-device epitaxial-growth 3C-SiC break-through トンネル電流短いパルス GaAs GaAlAs系

项目摘要

In the present research, the most important and indispensable technology which must be accomplished is the heat-pulse(phonon-pulse) technology with ultimate high resolution in space and time, and sensitivity. For this purpose, aluminium thin'films with granular structure deposited in oxygen gas atmosphere of about 5 X10^<-6> Torr were prepared, and these were used for both heater(phonon generator)and bolometer(receiver). For high space resolution, a photolithography technique was employed, namely the size of heater and bolometer was about 48*48 mu^2. To avoid the electromagnetic induction(break-through) caused by a very narrow(a few nano-sec.) pulse current, the heater and the bolometer were set vertically to each other, and micro coaxial-cable was used. The signal delay caused by finite heat and electric capacities were removed by numerical decoinbolution technique.In the present investigation, it was made clear that a crystal deform at boundaries between Si base and SiGe films in a tunneling-device preparedi by MBE method gives rise to a large phonon scattering and a phonon mode conversion even by very thin regions less than 100 A.namely, this method is very sensitive and useful to investigate the crystal deform of small region.Furthermore, to expand this investigation, an epitaxial growth of SiC film on-to Si base was carried out by means of hydrogen plasma sputtering method, and it was also made clear that 3C-SiC film was epitaxially grown onto Si wafer at a surprising low temperature, 800ﾟC, and then we would like to continue this in-vestigation using 3C-SiC films.

在目前的研究中，必须完成的最重要和必不可少的技术是具有极高时空分辨率和灵敏度的热脉冲（声子脉冲）技术。为此，在约5 × 10^<-6> Torr的氧气气氛中制备了颗粒状结构的铝薄膜，并将其用于加热器（声子发生器）和测辐射热计（接收器）。为了获得高空间分辨率，采用光刻技术，即加热器和测热计的尺寸约为48*48 mu^2。为了避免极窄（几纳秒）脉冲电流引起的电磁感应（突破），加热器和测热计垂直放置，并使用微型同轴电缆。采用数值解卷积技术消除了有限热电容量引起的信号延迟。在本研究中，通过MBE方法制备的隧道器件中，在Si基和SiGe薄膜之间的边界处发生晶体变形，即使在小于100 a的极薄区域也会产生较大的声子散射和声子模式转换，即该方法对于研究小区域的晶体变形是非常敏感和有用的。在此基础上，采用氢等离子溅射的方法在Si基上进行了SiC薄膜的外延生长，并在800℃的低温下在Si晶片上实现了SiC薄膜的外延生长。