Research on Ultramicrocrystalline Si : H Binary Compound

采用氢等离子体化学溅射（HPCS）工艺制备了超微晶Si：H二元化合物半导体。该过程是在射频磁控溅射系统中进行的纯氢气。薄膜的生长是通过氢等离子体与Si靶之间的化学反应、氢化分子从靶表面蒸发、氢化分子在氢等离子体中的分解以及沉积到衬底表面上等过程进行的。终极小斯：通过调节溅射功率和选择衬底材料，获得了平均粒径为1 nm的H粒子。采用HPCS工艺对薄膜进行了Sb、P掺杂，获得了高质量的Ⅱ-Ⅵ族化合物半导体（ZnS、CdS、CdTe、SrS）薄膜。多晶ZnS薄膜在20 ℃下生长在玻璃衬底上，外延薄膜在200 ℃下生长在（100）GaAs衬底上。在ZnS薄膜中实现了Mn元素的掺杂，这使我们能够制作电致发光器件。

Ultramicrocrystalline Si : H binary compound semiconductor has been prepared by the hydrogen plasma chemical sputtering (HPCS) process. The process was carried out in an rf magnetron sputtering system with pure hydrogen gas. The films were grown through the process such as the chemical reactions between the hydrogen plasma and the Si target, hydrogenated molecules evaporation from the target surface, decomposition of the hydrogenated molecules in the hydrogen plasma, and the deposition onto the surface the substrates. The ultimate small Si : H particles with the average grain size as small as 1nm was obtained by adjusting the sputtering power and choosing the substrate materials. Sb and P doping into the films was achieved by the HPCS process using the doped targets.High quality II-VI compound semiconductor (ZnS, CdS, CdTe, SrS) films were also obtained by the HPCS. The porycrystalline ZnS films were grown onto the glass substrates at 20^ﾟC and the epitaxial ones were grown onto (100) GaAs at 200^ﾟC. A Mn element doping was realized into the ZnS films, which enable us to fabricate an electroluminescent device.