Research on Ultramicrocrystalline Si : H Binary Compound

超微晶Si:H二元化合物的研究

• 批准号: 01850064
• 负责人: MIYASATO Tatsuro
• 金额: $ 10.05万
• 依托单位: Kyushu Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B).
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01850064/
• 关键词: 3D quantum size effect; microcrystalline Si; hydrogen plasma chemical sputtering; distorted Si crystal; Raman Spectroscopy; II-VI compound semiconductor films; luminescent device; epitaxial growth; 水素プラズマケミカルスパッタ-法; 発光素子; 微粒子シリコン; 極限微粒子; 水素プラズ

Ultramicrocrystalline Si : H binary compound semiconductor has been prepared by the hydrogen plasma chemical sputtering (HPCS) process. The process was carried out in an rf magnetron sputtering system with pure hydrogen gas. The films were grown through the process such as the chemical reactions between the hydrogen plasma and the Si target, hydrogenated molecules evaporation from the target surface, decomposition of the hydrogenated molecules in the hydrogen plasma, and the deposition onto the surface the substrates. The ultimate small Si : H particles with the average grain size as small as 1nm was obtained by adjusting the sputtering power and choosing the substrate materials. Sb and P doping into the films was achieved by the HPCS process using the doped targets.High quality II-VI compound semiconductor (ZnS, CdS, CdTe, SrS) films were also obtained by the HPCS. The porycrystalline ZnS films were grown onto the glass substrates at 20^ﾟC and the epitaxial ones were grown onto (100) GaAs at 200^ﾟC. A Mn element doping was realized into the ZnS films, which enable us to fabricate an electroluminescent device.

采用氢等离子体化学溅射(HPCS)工艺制备了超微晶Si：H二元化合物半导体。这一过程是在纯氢气体射频磁控溅射系统中进行的。薄膜是通过氢等离子体与硅靶之间的化学反应，氢分子从靶表面蒸发，氢分子在氢等离子体中分解，沉积到衬底表面的过程来生长的。通过调整溅射功率和选择衬底材料，最终获得了平均晶粒尺寸为1 nm的细小的Si：H颗粒。采用HPCS工艺实现了Sb和P的掺杂，并获得了高质量的II-VI化合物半导体(ZnS、CDS、CdTe、SrS)薄膜。多晶硫化锌薄膜在20ﾟC下生长在玻璃衬底上，外延薄膜在200ﾟC下生长在(100)GaAs上，并在薄膜中实现了锰元素的掺杂，从而制成了电致发光器件。

项目成果

Y.Sun,M.Tonouchi,and T.Miyasato: "Growth temperature Dependence of μcーSi:H Films Sputtered with Hydrogen Gas" Japanese Journal of Applid Physics. 29. L1029-L1032 (1990)

Y. Sun、M. Tonouchi 和 T. Miyasato：“氢气溅射 μc-Si:H 薄膜的生长温度依赖性”，日本应用物理学杂志 29。L1029-L1032 (1990)。

M.Tonouchi,F.Moriyama,and T.Miyasato: "Charactertion of μcーSi:H Films Prepared by H_2 Sputtering" Japanese Journal of Applied Physics. 29. L385-L387 (1990)

M.Tonouchi、F.Moriyama 和 T.Miyasato：“H_2 溅射制备的 μc-Si:H 薄膜的特性”《日本应用物理学杂志》29. L385-L387 (1990)。

M.Tonouchi,T.Miyasato,H.Sakama,and M.Ohmura: "PREPARATION OF ZnS:Mn FILMS BY H_2 SPUTTERING" Procedings of the Thirteenth Symposium on Ion Source and IonーAssisted Technology. 287-290 (1990)

M.Tonouchi、T.Miyasato、H.Sakama 和 M.Ohmura：“通过 H_2 溅射制备 ZnS:Mn 薄膜”第十三届离子源和离子辅助技术研讨会论文集 287-290 (1990)。

M.Tonouchi,Y.Sun,T.Miyasato,H.Sakama,and M.Ohmura: "RoomーTemperature Systhesis of ZuS:Mu Films by H_2 Plasma Chemical Sputtering" Japanese Journal of Applid Physics. 29. L2453-L2456 (1990)

M.Tonouchi、Y.Sun、T.Miyasato、H.Sakama 和 M.Ohmura：“通过 H_2 等离子体化学溅射制备 ZuS:Mu 薄膜的室温系统”日本应用物理学杂志 29。L2453-L2456（1990 年） ）

M.Tonouchi,F.Moriyama,and T.Miyasato: "Characterization of μcーSi:H Films Prepared by H_2 Sputtering" Japanese Journal of Applied Physics. 29. L385-L387 (1990)

M.Tonouchi、F.Moriyama 和 T.Miyasato：“H_2 溅射制备的 μc-Si:H 薄膜的表征”《日本应用物理学杂志》29. L385-L387 (1990)。