Phonon Scattering Study of Strain-Effects in Heterostructure.

异质结构中应变效应的声子散射研究。

• 批准号: 05044108
• 负责人: MIYASATO Tatsuro
• 金额: $ 7.68万
• 依托单位: Kyushu Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05044108/
• 关键词: SiGe system thin film; high frequency phonon; heat pulse phonon; Al thin film bolometer; strained boundary; RF-sputtering; HEMT; phonon mode conversion; phonon detection; ボロメータ; アルミ薄膜; 応答関数; 時間分解能; 不規則表面; SiGe; Si膜; 熱フォノン; ヒーター; 格子歪; Si

The most important points in the present joint research is that some essential problems or difficulties should be overcome, which are : (1) precisely controlled heat pulse high frequency phonon generation and (2) high sensitive and quick phonon detection, (3) preparation of good controlled siGe system films, (4) correct data accumulation and their precise analyzes, and their (5) application to electronic devices.(1) The heater wihch generates high frequency phonons was prpared by photolithography technology with new method and design to get high resolution in time and space. A new technique to connect coaxial cable of 0.5 mmphi to the heater and the bolometer was developed and to avoid the electro-magnetic brake-through into the dtector.(2) The aluminium thin film bolometer of 10nm thick was evaporated in 5*10^<-6> Torr of oxgen atmosphere, wihch has steep and wide/linear transition slope at 1.35 K,and its sensitivity is far higher than that reported in the past. The crystallographic s … More tructure was revealed to be hexagonal, which is the first obervation and one of remarkable results of the present project. A good reproducibility and its outstanding quality were obtained in oil-free vacuum by turbo-molecular pump andby new photolithography technique by positive-resist process.(3) SiGe system film was prepared by RF-sputtering method, and a strong mode conversion at strained boundary was observed. But showed that the electric conductivi-tiy was not enough for EEMT,then the materials for HEMT is to be offered by HITACHI and other laboratories.(4) From the theoretical point, Miyasato and Wigmore developed calculation with A G Kozorezov at Lacaster University, in which we have modelled the scattering of heat pulse from rough surface, as reflection experiment as mentioned above. The effect of long-range irregu-larities was calculated in the eikonal approximation.As shown above, the technological and theoretical researches of the present project have made a great break-through in the field of interaciton of high frequency phonons with very thin films and/or electrons in it, namely low dimensional electron gas. Less

目前合作研究的重点是要克服一些基本问题或困难：（1）精确控制的热脉冲高频声子产生和（2）高灵敏度和快速的声子探测，（3）良好控制的SiGe系统薄膜的制备，（4）正确的数据积累和精确的分析，（5）在电子器件中的应用。(1)利用光刻技术，采用新的方法和设计，制作了高频声子加热器，获得了高的时间和空间分辨率。提出了一种将0.5mmphi同轴电缆连接到加热器和测辐射热计上的新技术，避免了电磁制动器进入检测器。(2)在5 × 10 ~（-3）Torr的氧气氛中蒸镀的10 nm厚的铝薄膜测辐射热<-6>计，在1.35K时具有陡而宽的线性过渡斜率，其灵敏度远高于以往的报道。晶体学 ...更多信息 结构为六方结构，这是首次观察到的，也是本课题的显著成果之一。在无油真空下，采用涡轮分子泵和正性光刻新技术，获得了良好的再现性和优异的质量。(3)用射频溅射法制备了SiGe系薄膜，在应变边界处观察到了较强的模式转换。但由于其电导率不足以满足EEMT的要求，因此HEMT材料由日立等实验室提供。(4)Miyasato和Wigmore与Lacaster大学的A.G. Kozorezov一起从理论上进行了计算，其中我们模拟了粗糙表面的热脉冲散射，作为上述的反射实验。在程函近似下计算了长程不规则性的影响，由此可见，本项目的技术和理论研究在高频声子与极薄薄膜和/或薄膜中电子相互作用，即低维电子气的研究领域取得了重大突破。少

项目成果

Yong Sun,Ryusuke Nishitani and Tatsuro Miyasato: "Study of the Growth Mechanism of Nanocrystalline Si:H Films Prepared by Reactive Hydrogen Plasma Sputteringof Silicon." Japanese Journal of Applyed Physics.Vol.33. L1645-L1648 (1994)

Yong Sun、Ryusuke Nishitani 和 Tatsuro Miyasato：“硅反应氢等离子体溅射制备纳米晶 Si:H 薄膜的生长机制的研究”。

Y.Sun & T.Miyasato.: "Jpn.J.Appl.Phys." Characterization of Stress in Porous Silicon Films Prepared by Reactive Hydrogen Plasma Sputtering Technique.34. L1248-L1250 (1995)

孙宇

K.HIGA,T.ASANO & T.MIYASATO.: "Variation of Photoluminescence Properties of Stain-Etched Porous Si with Crystallinity of Starting polycrystalline Si Films." Jpn.J.Appl.Phys.33. L1733-L1736 (1994)

比嘉、浅野太郎

Y.SUN,R.NISHITANI & T.MIYASATO.: "Study of the Growth Mechanism of Nanocrystalline Si : H Films Prepared by Reactive Hydrogen Plasma Sputtering of Silicon." Jpn.J.Appl.Phys.33. L1645-L1648 (1994)

孙勇、西谷

M.TONOUCHI,T.MIYASATO,P.HAWKER,T.S.CHENG & V.W.RAMPTON.: "Classical Edge Magnetoplasmon in a GaAs/AlGaAs Two-Dimensional Electron System." J.Phys.Soc.Jpn.63. 4499-4505 (1994)

M.Tonouchi、T.宫里、P.HAWKER、T.S.Cheng