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A STUDY ON PREPARATION OF ELECTRO-MATERIAL FILMS BY MEANS OF HYDROGEN PLASM SPUTTERING METHOD CONTROLLED BY MAGNETIC FIELD.

磁场控制氢等离子体溅射法制备电子材料薄膜的研究。

基本信息

批准号：
63550238
负责人：
MIYASATO Tatsuro
金额：
$ 0.32万
依托单位：
KYUSHU INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1988
资助国家：
日本
起止时间：
1988 至 1989
项目状态：
已结题

项目摘要

A study on the preparation methods of electro-material films by means of hydrogen plasma sputtering controlled by a magnetic field was carried out, and it was concluded that the premethod which takes into consideration a strong effect of Lorentz force to the hydrogen-ions because of its light mass and high kinetic velocity was exceedingly effective for the preparation of useful materials for electronics device.(1)Ultra-fine crystal silicon particles wa obtained from a silicon target. This material is believed to emit visible light by three dimensional quantum size effect, but we believe for the time being that we should also pay attention to the fact that the fact that the crystal structure of the silicon is deformed just close to the surface of the crystal because of a crystal relaxation effect, and that for the ultra fine silicon crystal particles with a diameter of a few nm, a large part of the particle volume is composed of such a relaxed crystal or deformed lattice crystal.(2)Improvement of the crystal size of the particle for the poly-crystal silicon films. The film prepared onto the substrate at 400C was composed of perfectly crystallized silicon and it contained 3 atomic % of hydrogen atoms which passivate the dangling bonds in the crystal, and by increasing the substrate temperature to 400C, the diameter of the particle was increased from 5nm to 25nm. Furthermore, non-oriented film was obtained by applying a magnetic field of 50 gauss during the preparation, which means that the magnetic field plays an important role on the orientation of the crystallization.(3)A study for the preparation of a compound semiconductor films. A study was carried out to prepare ZnS:Mn films which calls attentions because of a possibility for material of electro-luminescence device, and a surprising fact was made clear that a high quality ZnS:Mn film was obtained onto the substrate at 20C, and the stoichiometrical composition was perfectly maintained after deposition.

对磁场控制氢等离子体溅射制备电材料薄膜的方法进行了研究，结果表明，由于氢离子的质量轻、动能速度快，考虑了洛伦兹力对氢离子的强烈影响的预成膜方法对于制备电子器件有用的材料是非常有效的。(1)超细晶体硅颗粒是从硅靶中获得的。这种材料被认为是通过三维量子尺寸效应发出可见光的，但我们暂时认为还应该注意到，由于晶体弛豫效应，硅的晶体结构恰好在晶体表面附近变形，对于直径几纳米的超细硅晶体颗粒，很大一部分颗粒体积是由这样的驰豫晶体或变形的晶格晶体组成的。(2)多晶硅薄膜颗粒晶体尺寸的改善。在400℃下在衬底上制备的薄膜由完全结晶的硅组成，其中含有3个原子%的氢原子，这些氢原子钝化了晶体中的悬挂键，并且随着衬底温度的升高，颗粒的直径从5 nm增加到25 nm。此外，在制备过程中施加50Gauss的磁场可以得到无取向的薄膜，说明磁场对结晶取向起着重要的作用。(3)化合物半导体薄膜的制备研究。对电致发光器件材料的可能性进行了研究，发现在20℃的温度下可以在衬底上制备出高质量的ZnS：Mn薄膜，并且沉积后的化学计量比完全保持不变。