A STUDY ON PREPARATION OF ELECTRO-MATERIAL FILMS BY MEANS OF HYDROGEN PLASM SPUTTERING METHOD CONTROLLED BY MAGNETIC FIELD.

研究了磁场控制氢等离子体溅射法制备电子材料薄膜的方法，认为考虑到氢离子质量轻、运动速度快，受洛仑兹力影响较大的预处理方法是制备电子器件有用材料的一种非常有效的方法。（1）从硅靶中获得了超细晶体硅颗粒。这种材料被认为通过三维量子尺寸效应发射可见光，但我们认为目前我们还应该注意这样一个事实，即由于晶体弛豫效应，硅的晶体结构在靠近晶体表面处变形，并且对于直径为几nm的超细硅晶体颗粒，颗粒体积的大部分由这种弛豫晶体或变形晶格晶体组成。（2）改善多晶硅膜颗粒的晶体尺寸。在400 ℃下在衬底上制备的薄膜由完全结晶的硅组成，并且它含有3原子%的氢原子，氢原子钝化晶体中的悬挂键，并且通过将衬底温度提高到400 ℃，颗粒的直径从5nm增加到25nm。另外，在制备过程中施加50高斯的磁场可以得到无取向的薄膜，说明磁场对薄膜的结晶取向起着重要的作用。(3)A化合物半导体薄膜的制备研究。研究了制备ZnS：Mn薄膜的方法，由于其作为电致发光器件材料的可能性而引起人们的关注，令人惊讶的事实表明，在20 C下在衬底上获得了高质量的ZnS：Mn薄膜，并且沉积后化学计量组成得到了完美的保持。

A study on the preparation methods of electro-material films by means of hydrogen plasma sputtering controlled by a magnetic field was carried out, and it was concluded that the premethod which takes into consideration a strong effect of Lorentz force to the hydrogen-ions because of its light mass and high kinetic velocity was exceedingly effective for the preparation of useful materials for electronics device.(1)Ultra-fine crystal silicon particles wa obtained from a silicon target. This material is believed to emit visible light by three dimensional quantum size effect, but we believe for the time being that we should also pay attention to the fact that the fact that the crystal structure of the silicon is deformed just close to the surface of the crystal because of a crystal relaxation effect, and that for the ultra fine silicon crystal particles with a diameter of a few nm, a large part of the particle volume is composed of such a relaxed crystal or deformed lattice crystal.(2)Improvement of the crystal size of the particle for the poly-crystal silicon films. The film prepared onto the substrate at 400C was composed of perfectly crystallized silicon and it contained 3 atomic % of hydrogen atoms which passivate the dangling bonds in the crystal, and by increasing the substrate temperature to 400C, the diameter of the particle was increased from 5nm to 25nm. Furthermore, non-oriented film was obtained by applying a magnetic field of 50 gauss during the preparation, which means that the magnetic field plays an important role on the orientation of the crystallization.(3)A study for the preparation of a compound semiconductor films. A study was carried out to prepare ZnS:Mn films which calls attentions because of a possibility for material of electro-luminescence device, and a surprising fact was made clear that a high quality ZnS:Mn film was obtained onto the substrate at 20C, and the stoichiometrical composition was perfectly maintained after deposition.