Research on epitaxial growth of functional group-IV semiconductor superstructures and application to VLSI

研究了基于iv族半导体的各种半导体超结构。在应变松弛SiGe上生长出相邻的量子湿阱，分别约束电子和空穴，并观察到非声子跃迁的显著增强。我们还利用Stranski-Krastanow生长模式在Si上生长了Ge量子点，由于有效的载流子约束，观察到强烈的光致发光。采用气源选择性外延和电子束光刻相结合的方法，实现了锗点尺寸和位置的精确控制。在松弛sige和纯通道上分别使用应变si通道实现了很高的电子和空穴迁移率。

Various semiconductor superstructures based on group-IV semiconductors have been investigated. Neighboring Confinement Structures, which consist of adjacent quantum wet Is that separately confine electrons and holes, were grown on strain-relaxed SiGe, and great enhancement of no-phonon transitions was observed. We also grew Ge quantum dots on Si by utilizing the Stranski-Krastanow growth mode, and intense photoluminescence was observed due to the efficient carrier confinement. Precise control of the size and the position of Ge dots was achieved by combining gas-source selective epitaxy and electron beam lithography. Very high mobilities were realized both in electrons and holes by using strained-Si channel on relaxed-SiGe and pure-Gechannel, respectively.