Research on epitaxial growth of functional group-IV semiconductor superstructures and application to VLSI

IV族半导体超结构外延生长及其在超大规模集成电路中的应用研究

• 批准号: 09355001
• 负责人: SHIRAKI Yasuhiro
• 金额: $ 19.71万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09355001/
• 关键词: SiGe; neighboring confinement structure; quantum dots; selective epitaxy; イオン注入; 変調ドープ構造; 界面ラフネス散乱; 不純物散乱; SiGeの混晶; 量子細線; Si(311)面; ガスソース分子線エピタキシ-; Stranski-Krastanow成長様式

Various semiconductor superstructures based on group-IV semiconductors have been investigated. Neighboring Confinement Structures, which consist of adjacent quantum wet Is that separately confine electrons and holes, were grown on strain-relaxed SiGe, and great enhancement of no-phonon transitions was observed. We also grew Ge quantum dots on Si by utilizing the Stranski-Krastanow growth mode, and intense photoluminescence was observed due to the efficient carrier confinement. Precise control of the size and the position of Ge dots was achieved by combining gas-source selective epitaxy and electron beam lithography. Very high mobilities were realized both in electrons and holes by using strained-Si channel on relaxed-SiGe and pure-Gechannel, respectively.

基于第IV族半导体的各种半导体超结构已经被研究。在应变松弛的SiGe衬底上生长了由相邻的量子湿原子分别限制电子和空穴的相邻限制结构，并观察到非声子跃迁的显著增强。我们还利用Sanski-Krastanow生长模式在硅上生长了Ge量子点，由于有效的载流子限制，我们观察到了强烈的光致发光。气源选择外延和电子束光刻相结合，实现了对Ge点大小和位置的精确控制。在弛豫SiGe和纯Ge上分别利用应变硅沟道实现了电子和空穴中很高的迁移率。

项目成果

H.Sunamura: "New strain-strain-relieving microstructure in pure-Ge/Si short-period superlattices" J.Vac.Sci.Technol.B. 16. 1595-1598 (1998)

H.Sunamura：“纯 Ge/Si 短周期超晶格中的新型应变消除微观结构”J.Vac.Sci.Technol.B。

K.Amano: "Epitaxial Growth and optical investigation of Si/pure-Ge/Si quantum structures on Si (311)" Semicon.Sci.and Technolo.13. 1277-1283 (1998)

K.Amano：“Si (311) 上 Si/纯 Ge/Si 量子结构的外延生长和光学研究”Semicon.Sci.and Technolo.13。

N.Usami: "Spectrscopic study of Si-based quntum wells with neighboring confinement structure" Semicon.Sci.Technolo.12. 1596-1602 (1997)

N.Usami：“具有邻近限制结构的硅基量子阱的光谱研究”Semicon.Sci.Technolo.12。

N.Usami: "Photoluminescence from pure-Ge/pure-Si neighboring confinement structure" J.Vac.Sci.Technol.B. 16. 1710-1712 (1998)

N.Usami：“来自纯 Ge/纯 Si 相邻限制结构的光致发光”J.Vac.Sci.Technol.B。

N.Usami: "Mesoscopic Physics and Electronics Chap.6.6 SiGe QUantum Structures" Springer, (1998)

N.Usami：“介观物理和电子学第 6.6 章 SiGe 量子结构”Springer，（1998 年）