Control of Optical Transitions with Quantum Microstructures of Indirect Semiconductors

利用间接半导体的量子微结构控制光学跃迁

• 批准号: 06452103
• 负责人: SHIRAKI Yasuhiro
• 金额: $ 2.56万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452103/
• 关键词: SiGe; quantum well; quantum wire; quantum dot; neighboring confinement structure; 間接遷移型半導体; 超格子

We investigated optical properties of indirect semiconductors with atomically controlled superstructures. By observing confinement effect and development of island-related emission with incerasing Ge coverage in Si/pure-Ge/Si quantum wells, the onset of the island formation was determined to be 3.7 monolayrs. Quantum confinement effect of island-related emission was clearly observed, demonstrating that the islands have "quantum dot" character. The island was found to generate inhomogeneous strain-field to the surrounding materials and to modulate potential. Formation of the Ge "quantum wire" at the step-edge was evidenced by plan-view transmission electron microscopy, enhanced exciton-exciton interactions, and incerased density of states at the band edge. A novel semiconductor superstructure, "Neighboring Confinement Structure (NCS)", to improve optical properties of indirect semiconductors was developed and successfully applied to SiGe-and ALGaP-based superstructures. Particularly, in the case of SiGe/Si system, luminescence without phonon participation was selectively enhanced, demonstrating the potential of NCS as light emitters.

研究了具有原子控制超结构的间接半导体的光学性质。通过观察Si/纯Ge/Si量子阱中随着Ge覆盖率的增加而产生的禁闭效应和岛相关发射的发展，确定了岛形成的起始时间为3.7单层。海岛相关发射的量子约束效应被清晰地观察到，表明海岛具有“量子点”特征。发现孤岛对周围材料产生不均匀的应变场，并调制电位。平面透射电镜证实了Ge“量子线”在台阶边缘的形成，增强了激子-激子相互作用，并增加了带边缘的态密度。提出了一种改善间接半导体光学性能的新型半导体超结构“邻接约束结构（NCS）”，并成功应用于sige和algap基超结构中。特别是，在SiGe/Si体系中，没有声子参与的发光被选择性地增强，这表明了NCS作为发光体的潜力。

项目成果

F. Issiki: "Efficient luminescence form AlP/Gap ncighboring confinement structure with A1GaP barrier layers" Applied Physics Letters. 67. 1048-1050 (1995)

F. Issiki：“具有 A1GaP 势垒层的 AlP/Gap 邻近限制结构的高效发光”《应用物理快报》。

K. Miyashita: "Incorporation kinetics of rarc-carth elements in Si during molccular bcam cpitaxy" Applied Physics Letters. 67. 235-237 (1995)

K. Miyashita：“分子 bcam cpitaxy 过程中稀土元素在 Si 中的结合动力学”应用物理快报。

F.Issiki: "Efficient luminescence form AIP/GaP neighboring confinement structure with AlGaP barrier layers" Applied Physics Letters. 67. 1048-1050 (1995)

F.Issiki：“具有 AlGaP 势垒层的 AIP/GaP 相邻限制结构的高效发光”应用物理快报。

N.Usami: "Strain-induced lateral band gap modulation in SiGe/Si quantum well and quantum wire structures" Journal of Crystal Growth. (発表予定). (1995)

N.Usami：“SiGe/Si 量子阱和量子线结构中的应变诱导横向带隙调制”《晶体生长》杂志（即将出版）。

K.Miyashita: "Incorporation kinetics of rare-earth elements in Si during molecular beam epitaxy" Applied Physics Letters. 67. 235-237 (1995)

K.Miyashita：“分子束外延过程中稀土元素在硅中的结合动力学”应用物理快报。