权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Control of resonant electron capture in semiconductor quantum structures

半导体量子结构中共振电子捕获的控制

基本信息

批准号：
04452085
负责人：
SHIRAKI Yasuhiro
金额：
$ 4.48万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1993
项目状态：
已结题

项目摘要

The resonant carrier capture in AlGaAs/GaAs QW structures was systematically investigated by both steady-state and time-resolved photoluminescence. The new structure of QWs with AlAs tunnel barriers was proposed to enhance the resonant effect. It has been clearly revealed that the electron capture efficiency is increased and the electron capture time is decreased due to the resonant electron capture. It has been also found that the insertion of tunnel barriers at QW heterointerfaces drastically leads to resonance enhancement. We demonstrate an optical analogy of the resonant carrier capture, in terms of electron wave reflectivity, on the basis of the effective mass approximation, which well explains the experimental results.Importantly, the resonant electron capture is expected to be more prominent in low-dimensional quantum structures such as quantum well wires and quantum well boxes. In this sense, the present work will be a cornerstone for future work rying to shed lights on carrier capture in these sophisticated quantum structures. We believe that the control of the resonant electron capture will be regarded as a key issue so that we can tailor the carrier collection efficiency in such low-dimensional structures.

采用稳态光致发光和时间分辨光致发光两种方法系统地研究了AlGaAs/GaAs QW结构中的谐振载流子捕获。提出了一种具有AlAs隧道势垒的量子阱新结构，以增强谐振效果。结果表明，共振电子捕获提高了电子捕获效率，缩短了电子捕获时间。研究还发现，在量子阱异质界面处插入隧道势垒会导致共振增强。我们在有效质量近似的基础上，从电子波反射率的角度论证了谐振载流子捕获的光学类比，很好地解释了实验结果。重要的是，共振电子捕获有望在量子阱线和量子阱盒等低维量子结构中更加突出。从这个意义上说，目前的工作将成为未来试图揭示这些复杂量子结构中载流子捕获的工作的基石。我们认为，共振电子捕获的控制将被视为一个关键问题，以便我们可以在这种低维结构中定制载流子收集效率。

项目成果

期刊论文数量（28）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

K.Muraki et al.: "Enhancement of free-to-bound transitions due to resonant electron capture in Be-doped AlGaAs/GaAs quantum wells" Workbook of 6th International Confevence on Modulated Semiconductor Structures(MSS-6). 974-977 (1993)

K.Muraki 等人：“Enhancement of free-to-boundtransition due to resonant electronics capture in Be- Doped AlGaAs/GaAsQuantum Wells”第六届国际调制半导体结构会议（MSS-6）工作手册。