Research on Optical Transitions of Indirect Semiconductors with Novel Superstructures

新型超结构间接半导体光学跃迁研究

• 批准号: 08455008
• 负责人: SHIRAKI Yasuhiro
• 金额: $ 5.5万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455008/
• 关键词: SiGe; AlGaP; indireck semiconductors; neighboring confinement structure; no phonon transition; シリコンゲルマニウム; アルミニウムガリウム燐

Optical properties of Neighboring Confinement Structure (NCS), a promising candidate for light emitter based on indirect semiconductors, were systematically investigated. NCS consists of a single pair of a quantum well (QW) for electrons and a QW for holes embedded between barrier layrs. Intense PL with enhanced no-phonon (NP) line was clealy observed from NCS based on SiGe- and AlGaP-based semiconductors. Quantum confinement effect was clearly observed by varying the well width, showing that the enhanced NP lines come from the expected transitions of the NCS.Post growth annealing was found to lead to selective quenching of the NP line compared to its transverse optical phonon replica. Time-resolved PL study clarified that the radiative lifetime of the annealed sample increases with increasing temperature, while that of the as-grown sample shows no significant change at low temperatures. These results were reasonably explained by considering that the exciton localization at the heterointerface is the controlling mechanism for the NP enhancement observed at low temperatures in NCS.The idea was supported by the increase of the critical temperature of the exciton delocalization in the sample with well width of around critical thickness for islanded growth where well width fluctuation is considered to be significant.

系统地研究了基于间接半导体的光发射体候选材料--邻域限制结构的光学性质。NCS由一对量子阱(QW)和一对嵌入势垒层之间的空穴组成。从基于SiGe和AlGaP基半导体的NCS中可以清楚地观察到具有增强的非声子(NP)线的强烈的发光。通过改变势垒宽度可以清楚地观察到量子限制效应，表明增强的NP线来自于NCS的预期跃迁。与其横向光学声子复制品相比，生长后的热处理导致了NP线的选择性猝灭。时间分辨光致发光研究表明，随着温度的升高，样品的辐射寿命增加，而生长样品的辐射寿命在低温下没有明显变化。考虑到激子在异质界面的局域化是NCS低温下观察到的NP增强的控制机制，对这些结果进行了合理的解释。这一观点得到了井宽在临界厚度附近的孤岛生长样品中激子离域临界温度的提高的支持，在这种情况下，井宽波动被认为是显著的。

项目成果

E.S.Kim, N.Usami, and Y.Shiraki: "Anomalous luminescence peak shift of SiGe/Si quantum well induced by self-assembled Ge islands" Appl.Phys.Lett.70. 295-297 (1997)

E.S.Kim、N.Usami 和 Y.Shiraki：“自组装 Ge 岛引起的 SiGe/Si 量子阱的异常发光峰位移”Appl.Phys.Lett.70。

N.Usami: "Mesoscopic Physics and Electronics Chap.6.6 SiGe QUantum Structures" Springer, (1998)

N.Usami：“介观物理和电子学第 6.6 章 SiGe 量子结构”Springer，（1998 年）

H.Sunamura, N.Usami, Y.Shiraki, S.Fukatsu: "Observation of lateral confinement effect in Ge quantum wires self-aligned at step edges on Si (100)" Appl.Phys.Lett.68. 1847-1849 (1996)

H.Sunamura、N.Usami、Y.Shiraki、S.Fukatsu：“观察 Si (100) 上台阶边缘自对准的 Ge 量子线的横向限制效应”Appl.Phys.Lett.68。

H.Sunamura: "Anomalous photoluminescence of pure-Ge/Si type-II coupled quantum wells" Thin Solid Films. (発表予定).

H. Sunamura：“纯 Ge/Si II 型耦合量子阱的反常光致发光”固体薄膜（待提交）。

E.S.Kim: "Luminescence study on Ge islands a stressors on SiGe/Si quantum well" J.Gryst.Growth. 175/176. 519-522 (1997)

E.S.Kim：“Ge 岛的发光研究是 SiGe/Si 量子阱上的压力源”J.Gryst.Growth。