Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies
Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies
批准号:
21246003
负责人:
SHIRAKI Yasuhiro
金额:
$26.12万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2012
中文摘要
我们建立了在硅平台上实现GE光电器件的关键技术,这些技术是面向下一代大规模集成(LSI)的高性能、低功耗的创新器件,以及模拟技术。我们成功地形成了新型应变Ge沟道结构和应变Ge绝缘体,利用Ge量子点形成了光子晶体和微盘微腔的室温强电致发光,并将其与光波导相耦合。
英文摘要
We established essential technologies for realization of Ge optoelectronic devices on the Si platform, which are promising innovative devices with high performances and low power consumption toward next-generation LSI (Large Scale Integration), along with simulation technologies. We succeeded in formation of novel strained Ge channel structures and strained Ge-on-Insulator, room-temperature strong electroluminescence from photonic crystal and microdisk maicrocavities with Ge quantum dots and their coupling with optical waveguide.
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DOI:
10.1088/0268-1242/26/5/055004
发表时间:
2011-05
期刊:
Semiconductor Science and Technology
影响因子:
1.9
作者:
[Y. Shin;R. Brunner;A. Shibatomi;T. Obata;T. Otsuka;J. Yoneda;Y. Shiraki;K. Sawano;Y. Tokura-Y.-Toku]
通讯作者:
Y. Shin;R. Brunner;A. Shibatomi;T. Obata;T. Otsuka;J. Yoneda;Y. Shiraki;K. Sawano;Y. Tokura-Y.-Toku
Formation of Uniaxially Strained Si/Ge Channels on SiGe Buffers Strain-controlled with Selective Ion Implantation
通过选择性离子注入在应变控制的 SiGe 缓冲器上形成单轴应变 Si/Ge 通道
DOI:
10.1149/05009.0815ecst
发表时间:
2012
期刊:
ECS Transactions
影响因子:
--
作者:
[T.Araki, D.Fukuoka, H.Tamiya, S.Harui, T.Yamaguchi, H.Miyake, K.Hiramatsu, Y.Nanishi, 石井久夫, 今井真美・福原学・楊成・森直・井上佳久, K. Sawano]
通讯作者:
K. Sawano
Line width dependence of anisotropic strain state in SiGe films induced by selective ion implantation
选择性离子注入引起的 SiGe 薄膜中各向异性应变状态的线宽依赖性
DOI:
--
发表时间:
2011
期刊:
Applied Physics Express
影响因子:
2.3
作者:
[Y. Hoshi, K. Sawano, A. Yamada, S. Nagakura, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki]
通讯作者:
and Y. Shiraki
Study of High-κ/In_<0.53>Ga_<0.47>As Interface by Hard X-ray Photoemission Spectroscopy
高κ/In_<0.53>Ga_<0.47>As界面的硬X射线光电子能谱研究
DOI:
10.1143/jjap.50.10pd02
发表时间:
2011
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Koji Yamashita, Yuuya Numajiri, Masato Watanabe, Kuniyuki Kakushima, Hiroshi Iwai, Hiroshi Nohira]
通讯作者:
Hiroshi Nohira
Electroluminescence of a Si-based light emitting device using photonic crystal microcavity with self-assembled Ge dots
使用具有自组装Ge点的光子晶体微腔的硅基发光器件的电致发光
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[T.Tsuboi, J.S.Xia, X.Xu, N.Usami, T.Maruizumi, Y.Shiraki]
通讯作者:
Y.Shiraki
共 117 条
Study on Enhancement of Non-Phonon Excitonic Luminescence by using Inhomogeneous strain fields
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批准号:11450002
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项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$6.08万
-
财政年份:1999
-
负责人:SHIRAKI Yasuhiro
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依托单位:
Research on epitaxial growth of functional group-IV semiconductor superstructures and application to VLSI
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批准号:09355001
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$19.71万
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财政年份:1997
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负责人:SHIRAKI Yasuhiro
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依托单位:
Research on Optical Transitions of Indirect Semiconductors with Novel Superstructures
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批准号:08455008
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$5.5万
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财政年份:1996
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负责人:SHIRAKI Yasuhiro
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依托单位:
Control of Optical Transitions with Quantum Microstructures of Indirect Semiconductors
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批准号:06452103
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$2.56万
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财政年份:1994
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负责人:SHIRAKI Yasuhiro
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依托单位:
Control of resonant electron capture in semiconductor quantum structures
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批准号:04452085
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.48万
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财政年份:1992
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负责人:SHIRAKI Yasuhiro
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依托单位:
Development of scanning tunneling microscope for materials growth front observations on an atomic scale
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批准号:01850001
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$7.17万
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财政年份:1989
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负责人:SHIRAKI Yasuhiro
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依托单位:
海外基金