Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies

我们建立了在硅平台上实现GE光电器件的关键技术，这些技术是面向下一代大规模集成(LSI)的高性能、低功耗的创新器件，以及模拟技术。我们成功地形成了新型应变Ge沟道结构和应变Ge绝缘体，利用Ge量子点形成了光子晶体和微盘微腔的室温强电致发光，并将其与光波导相耦合。

We established essential technologies for realization of Ge optoelectronic devices on the Si platform, which are promising innovative devices with high performances and low power consumption toward next-generation LSI (Large Scale Integration), along with simulation technologies. We succeeded in formation of novel strained Ge channel structures and strained Ge-on-Insulator, room-temperature strong electroluminescence from photonic crystal and microdisk maicrocavities with Ge quantum dots and their coupling with optical waveguide.