Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies

创新型锗光电器件展示及仿真技术发展

• 批准号: 21246003
• 负责人: SHIRAKI Yasuhiro
• 金额: $ 26.12万
• 依托单位: Tokyo City University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21246003/
• 关键词: ゲルマニウム; 量子ドット; フォトニック結晶; シミュレーション; 歪み; 微小共振器; 導波路; 光電子融合デバイス; マイクロディスク; 高誘電率絶縁膜

We established essential technologies for realization of Ge optoelectronic devices on the Si platform, which are promising innovative devices with high performances and low power consumption toward next-generation LSI (Large Scale Integration), along with simulation technologies. We succeeded in formation of novel strained Ge channel structures and strained Ge-on-Insulator, room-temperature strong electroluminescence from photonic crystal and microdisk maicrocavities with Ge quantum dots and their coupling with optical waveguide.

我们建立了在Si平台上实现Ge光电器件的基本技术，这是下一代大规模集成电路（大规模集成电路）的高性能低功耗创新器件，以及仿真技术。我们成功地形成了新的应变锗通道结构和应变锗绝缘体，利用锗量子点实现了光子晶体和微盘微腔的室温强电致发光及其与光波导的耦合。

项目成果

Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

• DOI: 10.1088/0268-1242/26/5/055004
• 发表时间: 2011-05
• 期刊: Semiconductor Science and Technology
• 影响因子: 1.9
• 作者: Y. Shin;R. Brunner;A. Shibatomi;T. Obata;T. Otsuka;J. Yoneda;Y. Shiraki;K. Sawano;Y. Tokura-Y.-Toku

Formation of Uniaxially Strained Si/Ge Channels on SiGe Buffers Strain-controlled with Selective Ion Implantation

通过选择性离子注入在应变控制的 SiGe 缓冲器上形成单轴应变 Si/Ge 通道

• DOI: 10.1149/05009.0815ecst
• 发表时间: 2012
• 期刊: ECS Transactions
• 作者: T.Araki;D.Fukuoka;H.Tamiya;S.Harui;T.Yamaguchi;H.Miyake;K.Hiramatsu;Y.Nanishi;石井久夫;今井真美・福原学・楊成・森直・井上佳久;K. Sawano
• 通讯作者: K. Sawano

Line width dependence of anisotropic strain state in SiGe films induced by selective ion implantation

选择性离子注入引起的 SiGe 薄膜中各向异性应变状态的线宽依赖性

• 发表时间: 2011
• 期刊: Applied Physics Express
• 影响因子: 2.3
• 作者: Y. Hoshi;K. Sawano;A. Yamada;S. Nagakura;N. Usami;K. Arimoto;K. Nakagawa;and Y. Shiraki
• 通讯作者: and Y. Shiraki

Study of High-κ/In_<0.53>Ga_<0.47>As Interface by Hard X-ray Photoemission Spectroscopy

高κ/In_<0.53>Ga_<0.47>As界面的硬X射线光电子能谱研究

• DOI: 10.1143/jjap.50.10pd02
• 发表时间: 2011
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Koji Yamashita;Yuuya Numajiri;Masato Watanabe;Kuniyuki Kakushima;Hiroshi Iwai;Hiroshi Nohira
• 通讯作者: Hiroshi Nohira

Electroluminescence of a Si-based light emitting device using photonic crystal microcavity with self-assembled Ge dots

使用具有自组装Ge点的光子晶体微腔的硅基发光器件的电致发光

• 发表时间: 2011
• 作者: T.Tsuboi;J.S.Xia;X.Xu;N.Usami;T.Maruizumi;Y.Shiraki
• 通讯作者: Y.Shiraki