Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies

我们确立了在Si平台上实现Ge光电子器件的基本技术，这是面向下一代LSI（大规模集成电路）的高性能和低功耗的有前途的创新器件，沿着模拟技术。我们成功地形成了新型的应变Ge沟道结构和应变Ge-on-Insulator，室温下光子晶体的强电致发光和Ge量子点的微盘微腔及其与光波导的耦合。

We established essential technologies for realization of Ge optoelectronic devices on the Si platform, which are promising innovative devices with high performances and low power consumption toward next-generation LSI (Large Scale Integration), along with simulation technologies. We succeeded in formation of novel strained Ge channel structures and strained Ge-on-Insulator, room-temperature strong electroluminescence from photonic crystal and microdisk maicrocavities with Ge quantum dots and their coupling with optical waveguide.