Study of stress effects on growth of metal and semiconductor on si surface

硅表面金属和半导体生长的应力效应研究

• 批准号: 09650026
• 负责人: MINODA Hiroki
• 金额: $ 2.11万
• 依托单位: TOKYO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650026/
• 关键词: surface stress; Si; Ge; In; domain structure; 3D island growth; インジウム; 表面応力; 金属吸着表面

Effects of surface stress on growth of metal and semiconductor on Si surfaces has been studied. When In was deposited on a Si(001) surface at about 500。C 4 X3-In structure is formed. There are two orientational domains and a 4 X 3 domain is formed on a 2 X 1 domain and a 3 X 4 domain on a 1 X 2 domain, Under the compressive stress condition In was deposited and the 3 X 4 domain is formed on the 1 X 2 domain. Comparing the areas of the 1 X 2 domain and that of the corresponding the 3 X 4 domains the 3 X 4 domain is smaller than that of the 1 X 2 domains. This is due to that formation of the 3 X 4 domain suppressed the compressive stress. Stress effect on the growth of Ge on the Si(001) surface was also investigated. The critical thickness where layer by layer growth mode change to the 3D island growth mode increase with increasing tensile stress. This is because that lattice constant of e is 4% larger than that of.Si and strain accumulated within the Ge thin film can be partly released.

研究了表面应力对金属和半导体在硅表面生长的影响。当In沉积在Si（001）表面时，温度约为500。形成c4x3 - in结构。在压应力条件下沉积了铟，并在1 × 2畴上形成了3 × 4畴，在2 × 1畴上形成了3 × 4畴。比较1 × 2域和相应的3 × 4域的面积，3 × 4域比1 × 2域的面积小。这是由于3x4畴的形成抑制了压应力。研究了应力对Ge在Si（001）表面生长的影响。随着拉应力的增大，层间生长模式转变为三维岛生长模式的临界厚度增大。这是因为e的晶格常数比。锗薄膜内积累的硅和应变可以部分释放。

项目成果

Y.Takahashi, H.Minoda, Y.Tanishiro and K.Yagi: "Ca-induced Step Burching on a Si(III)Viciral surfaces studied by Roflection Electron Microscopy" Surt.Sci.(in press).

Y.Takahashi、H.Minoda、Y.Tanishiro 和 K.Yagi：“通过反射电子显微镜研究 Si(III)Viciral 表面上的 Ca 诱导阶梯烧蚀”Surt.Sci.（出版中）。

H.Minoda and K Yagi: "Surface Morphology of Au-absorbrd Si(001) Vicinal Surface studied by Reflection Electron Microscopy" Surface Science. (in press). (1999)

H.Minoda 和 K Yagi：“通过反射电子显微镜研究金吸收 Si(001) 邻位表面的表面形态”表面科学。

H.Minoda and K.Yagi: "Surface Morphology of An-adsorbed Si(001)Viciral Surface Studied by Reflection Electron Microscopy" Surt.Sci.(in press).

H.Minoda 和 K.Yagi：“通过反射电子显微镜研究的吸附 Si(001)Viciral 表面的表面形态”Surt.Sci.（印刷中）。

Y Takahashi, H.minoda Y. Tanishiro, K.Yagi: "Cu-induced step Bunching on a Si(III)Vicinal Surfaces studied by Reflection Electron Microscopy" Surface Science. (in press). (1999)

Y Takahashi、H.minoda Y. Tanishiro、K.Yagi：“通过反射电子显微镜研究 Si(III) 邻位表面上的 Cu 诱导阶梯聚束”表面科学。