Study of stress effects on growth of metal and semiconductor on si surface

研究了表面应力对金属和半导体在硅表面生长的影响。当In沉积在Si（001）表面时，温度约为500。形成c4x3 - in结构。在压应力条件下沉积了铟，并在1 × 2畴上形成了3 × 4畴，在2 × 1畴上形成了3 × 4畴。比较1 × 2域和相应的3 × 4域的面积，3 × 4域比1 × 2域的面积小。这是由于3x4畴的形成抑制了压应力。研究了应力对Ge在Si（001）表面生长的影响。随着拉应力的增大，层间生长模式转变为三维岛生长模式的临界厚度增大。这是因为e的晶格常数比。锗薄膜内积累的硅和应变可以部分释放。

Effects of surface stress on growth of metal and semiconductor on Si surfaces has been studied. When In was deposited on a Si(001) surface at about 500。C 4 X3-In structure is formed. There are two orientational domains and a 4 X 3 domain is formed on a 2 X 1 domain and a 3 X 4 domain on a 1 X 2 domain, Under the compressive stress condition In was deposited and the 3 X 4 domain is formed on the 1 X 2 domain. Comparing the areas of the 1 X 2 domain and that of the corresponding the 3 X 4 domains the 3 X 4 domain is smaller than that of the 1 X 2 domains. This is due to that formation of the 3 X 4 domain suppressed the compressive stress. Stress effect on the growth of Ge on the Si(001) surface was also investigated. The critical thickness where layer by layer growth mode change to the 3D island growth mode increase with increasing tensile stress. This is because that lattice constant of e is 4% larger than that of.Si and strain accumulated within the Ge thin film can be partly released.