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ELECTRONIC PHYSIC ON A METAL-SEMICONDUCTOR INTERFACE

金属-半导体界面上的电子物理

基本信息

批准号：
61550231
负责人：
TOYAMA NAOTAKE
金额：
$ 0.64万
依托单位：
FACULTY OF ENGINEERING, KYUSHU INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1987
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-61550231/
关键词：
METAL-SEMICONDUCTOR CONTACT SCHOTTKY DIODE INTERFACE シリサイドリチャードソン定数

项目摘要

Metal-Si Schottky contacts have been made by using various metals in order to investigate the dependence of typical diode parameters, such as the barrier height and the effective Richardson constant, on a film thickness of the metal electrode. In any contact with a metal-electrode film below 400 <Ang> thickness, the Schottky barrier height evidently varies with the film thickness. The effective Richardson constant obtained by a photoelectrical measurement shows different values, depending upon the choice of metal, and also shows a metal-thickness dependence, contrary to the generally accepted theory for metal-semiconductor contacts. In particular, the effective Richardson constant in a sample made by rf sputtering shows a much larger film-thickness dependence than that in a sample by vacuum evaporation. Furthermore, for the purpose of investigating the cause of the change in the effective Richardson constant with the metal-film thickness, a 1000-<Ang>-thick Pt film has been deposited by rf sputtering onto Si substrates which have been heated to various temperatures between room temperature and 500゜C. The barrier height and the effective Richardson constant for these Pt-Si contacts have been investigated photoelectrically. As a result, it has been found that the dependences of the barrier height and the Richardson constant on the thickness of a sputtered Pt film quite agree with the dependences of those on the temperature of a Si substrate.

为了研究典型的二极管参数（例如势垒高度和有效理查森常数）对金属电极膜厚度的依赖性，已经使用各种金属制成了金属-Si肖特基接触。在与厚度低于400的金属电极膜的任何接触中<Ang>，肖特基势垒高度明显地随膜厚度而变化。通过光电测量获得的有效理查森常数显示不同的值，这取决于金属的选择，并且还显示金属厚度依赖性，这与普遍接受的金属-半导体接触理论相反。特别是，有效的理查森常数在由射频溅射的样品中示出了一个更大的膜厚依赖性比在真空蒸发的样品。此外，为了研究有效Richardson常数随金属膜厚度变化的原因，<Ang>通过射频溅射在Si衬底上沉积了1000-厚的Pt膜，该衬底已被加热到室温至500 ℃之间的各种温度。光电研究了这些Pt-Si接触的势垒高度和有效Richardson常数。结果发现，势垒高度和Richardson常数对溅射Pt膜厚度的依赖性与Si衬底温度的依赖性非常一致。